Справочник транзисторов. PMBT2222AMB

 

Биполярный транзистор PMBT2222AMB - описание производителя. Основные параметры. Даташиты.

Наименование производителя: PMBT2222AMB

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 75 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 340 MHz

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT883B

Аналоги (замена) для PMBT2222AMB

 

 

PMBT2222AMB Datasheet (PDF)

..1. pmbt2222amb.pdf Size:216K _nxp

PMBT2222AMB PMBT2222AMB

PMBT2222AMB40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-MountedDevice (SMD) plastic package.PNP complement: PMBT2907AMB2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package

4.1. pmbt2222am.pdf Size:215K _nxp

PMBT2222AMB PMBT2222AMB

PMBT2222AM40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device(SMD) plastic package.PNP complement: PMBT2907AM2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L

5.1. pmbt2222 pmbt2222a 4.pdf Size:51K _philips

PMBT2222AMB PMBT2222AMB

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2222; PMBT2222ANPN switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 09Philips Semiconductors Product specificationNPN switching transistors PMBT2222; PMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO

5.2. pmbt2222 pmbt2222a.pdf Size:111K _philips

PMBT2222AMB PMBT2222AMB

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

 5.3. pmbt2222 pmbt2222a.pdf Size:111K _nxp

PMBT2222AMB PMBT2222AMB

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

5.4. pmbt2222ays.pdf Size:256K _nxp

PMBT2222AMB PMBT2222AMB

PMBT2222AYS40 V, 600 mA, double NPN switching transistor24 June 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT2907AYS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V

 5.5. pmbt2222aqa.pdf Size:237K _nxp

PMBT2222AMB PMBT2222AMB

PMBT2222AQA40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.PNP complement: PMBT2907AQA2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top