Биполярный транзистор PMBT2907AMB - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PMBT2907AMB
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 210 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT883B
Аналоги (замена) для PMBT2907AMB
PMBT2907AMB Datasheet (PDF)
pmbt2907amb.pdf
PMBT2907AMB60 V, 600 mA PNP switching transistor21 September 2018 Product data sheet1. General descriptionPNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-MountedDevice (SMD) plastic package.NPN complement: PMBT2222AMB2. Features and benefits High current (max. 600 mA) Low voltage (max. 60V) Leadless ultra small SMD plastic package
pmbt2907am.pdf
PMBT2907AM60 V, 600 mA PNP switching transistor21 September 2018 Product data sheet1. General descriptionPNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device(SMD) plastic package.NPN complement: PMBT2222AM2. Features and benefits High current (max. 600 mA) Low voltage (max. 60 V) Leadless ultra small SMD plastic package
pmbt2907 pmbt2907a.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT2907; PMBT2907APNP switching transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheetPMBT2907; PNP switching transistorsPMBT2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS
pmbt2907 pmbt2907a 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2907; PMBT2907APNP switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationPNP switching transistors PMBT2907; PMBT2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIO
pmbt2907aqa.pdf
PMBT2907AQA60V, 600 mA PNP switching transistor21 September 2018 Product data sheet1. General descriptionPNP switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.NPN complement: PMBT2222AQA2. Features and benefits High current (max. 600 mA) Low voltage (max. 60V) Leadle
pmbt2907a.pdf
PMBT2907A60V, 600 mA, PNP switching transistor6 March 2015 Product data sheet1. General descriptionPNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.NPN complement: PMBT2222A40V variant: PMBT29072. Features and benefits Single general-purpose switching transistor AEC-Q101 qualified3. Applications Switching and linea
pmbt2907 pmbt2907a.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT2907; PMBT2907APNP switching transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheetPMBT2907; PNP switching transistorsPMBT2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS
pmbt2907ays.pdf
PMBT2907AYS60V, 600 mA, double PNP switching transistor26 June 2015 Product data sheet1. General descriptionDouble PNP switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double NPN complement: PMBT2222AYS2. Features and benefits Double general-purpose switching transistor AEC-Q101 qualified3. Applications Switching and
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