Справочник транзисторов. SS8050T23

 

Биполярный транзистор SS8050T23 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SS8050T23
   Маркировка: Y1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT23

 Аналоги (замена) для SS8050T23

 

 

SS8050T23 Datasheet (PDF)

 ..1. Size:545K  cn me-tech
ss8050t23.pdf

SS8050T23 SS8050T23

SS8050T23NPN Transistor ROHS FEATURE NPN Transistor Collector Current: IC=1.5A MARKING:Y1SOT-23Absolute maximum ratings (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 APC Collector Power Dissipation 0.3 W Tj

 7.1. Size:105K  secos
ss8050t.pdf

SS8050T23 SS8050T23

SS8050TNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : 1.5 A1Collector-base voltage 23V(BR)CBO : 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COLLEC

 8.1. Size:157K  fairchild semi
ss8050.pdf

SS8050T23 SS8050T23

July 2010SS8050NPN Epitaxial Silicon TransistorFeatures 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collecto

 8.2. Size:62K  samsung
ss8050.pdf

SS8050T23 SS8050T23

SS8050 NPN EPITAXIAL SILICON TRANSISTOR2W OUTPUT AMPLIFIER OF PORTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 )ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 6

 8.3. Size:174K  mcc
mmss8050-h.pdf

SS8050T23 SS8050T23

MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat

 8.4. Size:268K  mcc
mmss8050-l mmss8050-h.pdf

SS8050T23 SS8050T23

MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operatin

 8.5. Size:174K  mcc
mmss8050-l.pdf

SS8050T23 SS8050T23

MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat

 8.6. Size:286K  mcc
mmss8050w-h-j-l.pdf

SS8050T23 SS8050T23

MMSS8050W-LMCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMSS8050W-HCA 91311Phone: (818) 701-4933MMSS8050W-JFax: (818) 701-4939Features SOT-323 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 4

 8.7. Size:179K  mcc
ss8050-c-d.pdf

SS8050T23 SS8050T23

MCCMicro Commercial ComponentsTMSS8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SS8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag

 8.8. Size:237K  onsemi
ss8050.pdf

SS8050T23 SS8050T23

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.9. Size:258K  secos
ss8050w.pdf

SS8050T23 SS8050T23

SS8050WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-323FEATURESCollectorDim Min Max33A 1.800 2.200Power dissipation11 B 1.150 1.3502 BasePCM : 0.2 WC 0.800 1.000Collector CurrentD 0.300 0.4002ICM : 1.5 A A G 1.200 1.400EmitterLH 0.000 0.100Collector-base voltageJ 0.100 0.2503V(BR)CBO : 40 VSTo

 8.10. Size:310K  secos
ss8050.pdf

SS8050T23 SS8050T23

SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Complimentary to SS8550 33Top View Power Dissipation C B11 2PCM : 0.3W 2K E Collector Current ICM : 1.5A DCollector H J Collector - Base Voltage F GV(BR)CBO : 40V

 8.11. Size:515K  jiangsu
ss8050.pdf

SS8050T23 SS8050T23

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Power Dissipation 3. COLLECTOR PCM : 1 W (TA=25.) : 2 W (TC=25.) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEB

 8.12. Size:1374K  htsemi
ss8050.pdf

SS8050T23 SS8050T23

SS8 050SOT-23 TRANSISTOR(NPN)FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING: Y1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

 8.13. Size:292K  gsme
ss8050.pdf

SS8050T23 SS8050T23

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

 8.14. Size:168K  lge
ss8050 to-92.pdf

SS8050T23 SS8050T23

SS8050(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25) : 2 W (TC=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC C

 8.15. Size:723K  lge
ss8050.pdf

SS8050T23 SS8050T23

SS8050(NPN)TO-92 Bipolar TransistorsTO-921.EMITTER2. BASE3. COLLECTORFeatures Power dissipation PCM : 1 W (TA=25) : 2 W (TC=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC Collector

 8.16. Size:323K  lge
ss8050 sot-23.pdf

SS8050T23 SS8050T23

SS8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesComplimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A

 8.17. Size:223K  wietron
ss8050.pdf

SS8050T23 SS8050T23

SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation TA=25CPD W1.0TJ,TstgJunction

 8.18. Size:165K  wietron
ss8050lt1.pdf

SS8050T23 SS8050T23

SS8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.015003002.44170.12540100 5.0100u0.15350.15 u4.0WEITRON 27-Jul-20121/2http://www.weitron.com.twSS8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gai

 8.19. Size:752K  shenzhen
ss8050.pdf

SS8050T23 SS8050T23

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25) 3. COLLECTOR : 2 W (TC=25) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Volt

 8.20. Size:961K  shenzhen
ss8050lt1.pdf

SS8050T23

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst

 8.21. Size:550K  can-sheng
ss8050 y1 sot-23.pdf

SS8050T23 SS8050T23

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

 8.22. Size:284K  can-sheng
ss8050.pdf

SS8050T23 SS8050T23

TO-92 Plastic-Encapsulate TransistorsFEATURESTO-92Power dissipationPCM : 1 W (TA=25) 1.EMITTER: 2 W (TC=25) 2.BASEMAXIMUM RATINGS 3.COLLECTORMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS1 2 3Symbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsVCBO 40 VVCBOVCBO Co

 8.23. Size:423K  first silicon
ss8050g.pdf

SS8050T23 SS8050T23

SS8050GPlastic-Encapsulate Transistors Simplified outlineSS8050G TRANSISTOR NPN TO-92Features Power Dissipation 1.EMITTER PCM : 1 W (TA=25.) 2.BASE : 2 W (TC=25.) 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC

 8.24. Size:199K  galaxy
ss8050.pdf

SS8050T23 SS8050T23

Product specification NPN Silicon Epitaxial Planar Transistor SS8050 FEATURES Pb Collector Current.(I = 1.5A CLead-free Complementary To SS8550. Collector dissipation:P =300mW(T =25) C CAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8050 Y1 SOT-23 : none is for Lead Free package;

 8.25. Size:183K  globaltech semi
gstss8050.pdf

SS8050T23 SS8050T23

GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 1.5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (

 8.26. Size:187K  globaltech semi
gstss8050lt1.pdf

SS8050T23 SS8050T23

GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

 8.27. Size:631K  slkor
ss8050-l ss8050-h ss8050-j.pdf

SS8050T23 SS8050T23

SS8050TRANSISTOR(NPN)SOT-23 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperat

 8.28. Size:1865K  slkor
ss8050w.pdf

SS8050T23 SS8050T23

SS8050WNPN Transistors Features3 High Collector Current Complementary to SS8550W21.Base2.Emitter3.Collector1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 APC Collector Power Dissip

 8.29. Size:365K  umw-ic
ss8050l ss8050h ss8050j.pdf

SS8050T23 SS8050T23

RUMW UMW SS8050SOT-23 Plastic-Encapsulate TransistorsSOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

 8.30. Size:1198K  anbon
ss8050.pdf

SS8050T23 SS8050T23

SS8050General Purpose Transistors NPN SiliconFeatures Package outline High current capacity in compact package IC = 1.5A. Epitaxial planar type SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)0.108 (2.75)Mechanical data0.083 (2.10) Epoxy:UL94-V0 r

 8.31. Size:1924K  born
ss8050.pdf

SS8050T23 SS8050T23

SS8050Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS FeaturesSOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Ba

 8.32. Size:5560K  fuxinsemi
ss8050.pdf

SS8050T23 SS8050T23

SS8050General Purpose Transistors NPN SiliconFEATURES Complimentary to SS8550 SOT-23 MARKING: Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 300 mW CR Thermal Resistance F

 8.33. Size:659K  fms
ss8050.pdf

SS8050T23 SS8050T23

NPN SMD TransistorsFormosa MSSS8050General Purpose Transistors NPN SiliconPackage outlineSOT-23Features High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)0.108 (2.75)Mechanical data

 8.34. Size:2109K  high diode
ss8050.pdf

SS8050T23 SS8050T23

SS8050SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23Complimentary to SS8550Collector Current: IC=1.5A Marking: Y1Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C 1.5 A P Collector Power Dissipation 300 mW CB E

 8.35. Size:696K  jsmsemi
ss8050.pdf

SS8050T23 SS8050T23

SS8050Silicon Epitaxial Planar TransistorFEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation:P =2W(T =25) C CAPPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25

 8.36. Size:1436K  mdd
ss8050.pdf

SS8050T23 SS8050T23

SS8 050SOT-23 TRANSISTOR(NPN)FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING: Y1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

 8.37. Size:3792K  msksemi
ss8050-ms.pdf

SS8050T23 SS8050T23

www.msksemi.comSS8050-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to SS8550-MS1. BASE MARKING: Y1 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector

 8.38. Size:197K  powersilicon
ss8050.pdf

SS8050T23 SS8050T23

SS8050PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES Collector CurrentIC = 1.5A C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 PackageC SolderabilityMIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODESS8050--T3 SOT-23 Tape ReelY1SS8050--

 8.39. Size:942K  cn evvo
ss8050.pdf

SS8050T23 SS8050T23

SS8050 SS8050SOT-23NPN TRANSISTOR3FEATURES Complimentary to SS8550 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 40 V2.EMITTERCollectorEmitter Voltage VCEO 25 V3.COLLECTOREmitterBase Voltage VEBO 5 V1.5 ACollector Current Continuous ICmWCollector Power Dissipation PC 300

 8.40. Size:796K  cn shandong jingdao microelectronics
ss8050-l ss8050-h ss8050-j.pdf

SS8050T23 SS8050T23

Jingdao Microelectronics co.LTD SS8050 SS8050SOT-23NPN TRANSISTOR3FEATURES Complimentary to SS8550 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 40 V2.EMITTERCollectorEmitter Voltage VCEO 25 V3.COLLECTOREmitterBase Voltage VEBO 5 V

 8.41. Size:2083K  cn puolop
ss8050-l ss8050-h ss8050-j.pdf

SS8050T23 SS8050T23

SS8 050SOT-23 TRANSISTOR(NPN)FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING: Y1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

 8.42. Size:785K  cn shikues
ss8050.pdf

SS8050T23 SS8050T23

 8.43. Size:780K  cn shikues
ss8050w-l ss8050w-h ss8050w-j.pdf

SS8050T23 SS8050T23

SS8050WSS8050W TRANSISTOR (NPN)FEATURES Complimentary to SS8550W MARKING: Y1 SOT323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0

 8.44. Size:658K  wpmtek
ss8050.pdf

SS8050T23 SS8050T23

Integrated inOVP&OCP productsprovider SS8050SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Vol

 8.45. Size:386K  cn yfw
ss8050 ss8050-l ss8050-h ss8050-j.pdf

SS8050T23 SS8050T23

SS8050 SOT-23 NPN Transistors321.BaseFeatures 2.Emitter1 3.CollectorCollector Current: IC=1.5A Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 1.5 ACollector Dissipation PC 0.3 WJunction Tempera

 8.46. Size:1588K  cn yongyutai
ss8050.pdf

SS8050T23 SS8050T23

SS8050SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage -

 8.47. Size:1170K  cn yongyutai
ss8050l ss8050h ss8050j.pdf

SS8050T23 SS8050T23

SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 250 mW CR Therm

 8.48. Size:1002K  cn zre
ss8050l ss8050h ss8050j.pdf

SS8050T23 SS8050T23

SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

 8.49. Size:1793K  cn twgmc
ss8050.pdf

SS8050T23 SS8050T23

SS8050SS8050 TRANSISTOR (NPN) SS8050FEATURES Complimentary to SS8550 SOT-23 1BASE MARKING: Y1 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 APC Collector Power Dissipation 0

 8.50. Size:9568K  cn twgmc
ss8050w-l ss8050w-h ss8050w-j.pdf

SS8050T23 SS8050T23

SS8050WSS8050WSS8050WSS8050WTRANSISTOR(NPN)SS8 0 50 WSOT323 3FEATURES Complimentary to SS8550W 1. BASE 1 2. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Co

 8.51. Size:320K  cn yangzhou yangjie elec
ss8050-l ss8050-h.pdf

SS8050T23 SS8050T23

RoHS COMPLIANT SS8050-L THRU SS8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 9

 8.52. Size:1462K  cn dowo
ss8050-1.5a.pdf

SS8050T23 SS8050T23

SS8050-1.5ANPN TransistorFeatures SOT-23 For Switching and AF Amplifier Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : Y11.Base2. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 40 VCBOCollector Emitter Voltage V 25 VCEO

 8.53. Size:1042K  cn doeshare
ss8050.pdf

SS8050T23 SS8050T23

SS8050 SS8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to SS8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: Y1 Maximum Ratings & Thermal Characteristics TA = 25C un

 8.54. Size:625K  cn cbi
ss8050w.pdf

SS8050T23 SS8050T23

SS8050W TRANSISTOR (NPN)SOT323 FEATURES Complimentary to SS8550W 1. BASE 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.2 W

 8.55. Size:327K  cn cbi
ss8050.pdf

SS8050T23 SS8050T23

SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1BASE 2EMITTER 3COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W

 8.56. Size:1055K  cn fosan
ss8050.pdf

SS8050T23 SS8050T23

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDSS8050FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8550 SS8550 (Ta=25)CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageVCB

 8.57. Size:2053K  cn goodwork
ss8050.pdf

SS8050T23 SS8050T23

SS8050NPN GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V.Collector current IC=1.5A.ansition frequency fT>100MHz @ TrIC=50mAdc, VCE=10Vdc, f=30MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Solde

 8.58. Size:747K  cn hottech
ss8050.pdf

SS8050T23 SS8050T23

SS8050BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to SS8550 High Collector Current Surface Mount deviceSOT-323MECHANICAL DATA Case: SOT-323 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base

 8.59. Size:603K  cn idchip
ss8050.pdf

SS8050T23 SS8050T23

NPN SS8050SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1BASE 2EMITTER 3COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

 8.60. Size:1745K  cn mot
ss8050.pdf

SS8050T23 SS8050T23

SS8050 MOTNPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity: NPN General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code: Y1 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner circuit

 8.61. Size:1830K  cn shunye
mmbtss8050l mmbtss8050h mmbtss8050j.pdf

SS8050T23 SS8050T23

MMBTSS8050NPN Silicon General Purpose Transistors FeaturesSOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is availableMechanical data Epoxy:UL94-V0 rated flame retardant(B)(C) Case : Molded plastic, SOT-23(A) Terminals : Solder plated, solderable perMIL-STD-750, Method 20260.063 (1.60)0.027 (0.67)

 8.62. Size:1184K  cn xch
ss8050l ss8050h ss8050j.pdf

SS8050T23 SS8050T23

SS8050 Features Complimentary to SS8550 Collector Current: IC=1.5A SOT-23AMarking Code:Y 1Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00 J0.013 0.10KMAXIMUM RATINGS (Ta=25 unless otherwise noted) K0.903 1.10JL0.45 0.61

 8.63. Size:253K  cn haohai electr
hs8050 hs8050a hm8050 hmbt8050 hss8050 hmc6802.pdf

SS8050T23 SS8050T23

HMBT8050NPN-TRANSISTORNPN, 8050 NPN NPN Plastic-Encapsulate Transistors SMDHS8050, HS8050AHM8050, HMBT8050High breakdown voltageLow collector-emitter saturation voltageHSS8050, HMC6802Complementary to HMBT8550Transistor Polarity: NPN

 8.64. Size:220K  cn weida
ss8050b ss8050c ss8050d ss8050e.pdf

SS8050T23 SS8050T23

Jiangsu Weida Semiconductor Co., Ltd.SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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