5551. Аналоги и основные параметры
Наименование производителя: 5551
Маркировка: G1_Y1
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SOT23
Аналоги (замена) для 5551
- подборⓘ биполярного транзистора по параметрам
5551 даташит
5551.pdf
MOT 5551 NPN-TRANSISTOR NPN NPN High Voltage Transistor SMD 5551 NPN, BEC Complementary to5551 General Purpose Transistors Transistor Polarity NPN Transistor pinout BEC SOT-23 Package Marking Code G1 hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching Inner
2n5550 2n5551.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 140 160 Vdc Collector Base Voltage VCBO 160 180 Vdc Emitter B
mmbt5550 mmbt5551.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter
ips5551t.pdf
Data Sheet No. PD60168-C IPS5551T FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Product Summary Over temperature shutdown Over current shutdown Rds(on) 6.0m (max) Active clamp Input referenced to + Vcc V clamp 40V E.S.D protection Input referenced to Vcc Ishutdown 100A Description Vcc (op.) 5.5 - 18V The IPS5551T is a fully protected three ter
2n5550 2n5551 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS
pmst5550 pmst5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors Product data sheet 1999 Apr 29 Supersedes data of 1997 May 20 NXP Semiconductors Product data sheet NPN high-voltage transistors PMST5550; PMST5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATION
pmbt5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector Gene
pmbt5551 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5551 NPN high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector
pmst5550 pmst5551 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors 1999 Apr 29 Product specification Supersedes data of 1997 May 20 Philips Semiconductors Product specification NPN high-voltage transistors PMST5550; PMST5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLI
2n5551hr.pdf
2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 BVCEO 160 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 5 V - 10 mA > 80 TO-18 LCC-3 3 Hermetic packages 4 ESCC and JANS qualified 1 Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5551HR is a silicon planar NPN transistor spe
2sc5551.pdf
Ordering number ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions High fT (fT=3.5GHz typ). unit mm Large current (IC=300mA). 2038A Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SA
2sc5551a.pdf
Ordering number ENA1118 2SC5551A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output 2SC5551A Amplifier Applications Features High fT (fT=3.5GHz typ). Large current (IC=300mA). Large allowable collector dissipation (1.3W max). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Un
kst5551.pdf
KST5551 Amplifier Transistor Collector-Emitter Voltage VCEO=160V 3 Collector Power Dissipation PC (max)=350mW 2 SOT-23 1 Mark G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base
ffb5551.pdf
FFB5551 E2 B2 Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purpose high voltage amplifiers. C1 E1 is Pin 1. C2 B1 E1 SC70-6 Mark .P1 Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector Curr
2n5551 mmbt5551.pdf
June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180 240 in 2N5551 (Test condition IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23
fmb5551.pdf
FMB5551 C2 NPN General Purpose Amplifier E1 C1 SuperSOT-6 Surface Mount Package This device is designed for general purpose high voltage amplifiers and gas discharge display driving. B2 E2 Sourced from process 16. B1 pin #1 See MMBT5551 for characteristics. SuperSOTTM-6 Mark .3S Dot denotes pin #1 Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Pa
fmbs5551.pdf
FMBS5551 NC NPN General Purpose Amplifier C1 This device is designed for general purpose high voltage amplifiers E and gas discharge display drivers. B C C pin #1 SuperSOTTM-6 single Mark .3S1 Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Volta
fmbm5551.pdf
September 2008 FMBM5551 NPN General Purpose Amplifier This device has matched dies Sourced from process 16. See MMBT5551 for characteristics C2 E1 C1 B2 E2 B1 pin #1 SuperSOTTM-6 Mark .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6
pmst5550 pmst5551.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmbt5551.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector Gene
2n5551.pdf
2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage VCEO= 160V TO-92 Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Ju
cyt5551hcd.pdf
CYT5551HCD SURFACE MOUNT www.centralsemi.com DUAL, ISOLATED DESCRIPTION HIGH CURRENT The CENTRAL SEMICONDUCTOR CYT5551HCD NPN SILICON TRANSISTORS type consists of two (2) isolated NPN high current silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini device is ideal for high current applicati
cmpt5551.pdf
CMPT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE 1FF SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage
cxt5551e.pdf
CXT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES High Collector Breakdown Voltage 250V SOT-89 CASE Low
2n5550 2n5551.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
czt5551e.pdf
CZT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES SOT-223 CASE SOT-223 CASE High Collector Breakdown Voltage
cxt5551hc.pdf
CXT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-89 CASE MAXIMUM RAT
cmpt5551e.pdf
CMPT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE C555 FEATURES High Collector Breakdown Voltag
czt5551.pdf
CZT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Col
cyt5551d.pdf
CYT5551D www.centralsemi.com SURFACE MOUNT DUAL, ISOLATED DESCRIPTION NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CYT5551D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini device is ideal for high voltage amplifier applications. MARKING FULL P
cmlt5551hc.pdf
CMLT5551HC www.centralsemi.com SURFACE MOUNT SILICON HIGH CURRENT DESCRIPTION NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT5551HC is a high current NPN silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage and high current amplifier applications. MARKING CODE C51 S
czt5551hc.pdf
CZT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE
cmlt5551.pdf
CMLT5551 www.centralsemi.com SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE DESCRIPTION NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage amplifier applications. MARKING CODE 5C5
ctlt5551-m832d.pdf
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cmpt5551hc.pdf
CMPT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE 1FHC SOT-23 CASE MAXIMUM RATINGS
cmut5551e.pdf
CMUT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE 5C1 FEATURES High Collector Breakdown Voltag
cmut5551.pdf
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dxt5551p5.pdf
A Product Line of Diodes Incorporated DXT5551P5 160V NPN HIGH VOLTAGE TRANSISTOR PowerDI 5 Features and Benefits Mechanical Data 43% smaller than SOT223; 60% smaller than TO252 Case PowerDI 5 Maximum height just 1.1mm Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Rated up to 2.25W Moisture Sen
dzt5551.pdf
DZT5551 160V NPN VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 160V Case SOT223 Case material molded plastic. Green molding compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020 Low Saturation Voltage (150mV max @10mA) Terminals Finish -
mmdt5551.pdf
MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Type Available (MMDT5401) C2 B1 E1 Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 B C Ultra-Small Surface Mount Package B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20 "Gr
dmmt5551 dmmt5551s.pdf
DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Complementary PNP Type Available (DMMT5401) Dim Min Max Typ Ideal for Low Power Amplification and Switching A 0.35 0.50 0.38 Intrinsically Matched NPN Pair (Note 1) B C B 1.50 1.70 1.60 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
zxtn5551fl.pdf
ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features B 160V rating SOT23 package E Applications E High voltage amplification C Ordering information Device Reel size Tape w
fmmt5550 fmmt5551.pdf
SOT SI I O A A T 0 HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i 8 I V V T 8 I V V
dzt5551q.pdf
DZT5551Q 160V NPN VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT223 stringent requirements of Automotive Applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Features Ter
zxtn5551z.pdf
NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features B 160V rating SOT89 package E Applications E High voltage amplificatio
mmbt5551.pdf
MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 160V Case SOT-23 Case Material Molded Plastic, Green molding compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Complementary PNP Type Available (MMBT5401) Moisture Sensitivity Level 1 per J-STD-020 Totally
zxtn5551g.pdf
NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case SOT223 Case material Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020
dxt5551.pdf
DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 160V Case SOT89 IC = 600mA High Collector Current Case Material Molded Plastic, Green Molding Compound Complementary PNP Type DXT5401 UL Flammability Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity Level 1 per J-STD-020 To
mmst5551.pdf
MMST5551 180V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Epitaxial Planar Die Construction Case SOT323 Ultra-Small Surface Mount Package Case Material Molded Plastic. Green Molding Compound. Complementary NPN Type MMST5401 UL Flammability Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity Level 1
mmbt5551.pdf
MCC Micro Commercial Components TM MMBT5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Plastic Halogen free available upon request by adding suffix "-HF" Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC
mmst5551.pdf
MMST5551 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Small Signal Compliant. See Ordering Information) Transistor Maximum Ratings SOT-323 Operating Junction Temperature Range -55 to +150 Storage
2n5551 to-92.pdf
MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Tr
mmdt5551 sot-363.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMDT5551 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1 Transistors C
mmbt5550l mmbt5551l.pdf
MMBT5550L, MMBT5551L High Voltage Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector
mmbt5551m3.pdf
MMBT5551M3 NPN High Voltage Transistor The MMBT5551M3 device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose high voltage applications and is housed in the SOT-723 surface mount package. www.onsemi.com This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces Board Spa
2n5550 2n5551.pdf
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Curr
2n5551ta 2n5551tfr 2n5551tf 2n5551bu mmbt5551.pdf
March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking 3S 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Top Mark Package Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L
mmbt5550lt1 mmbt5551lt1.pdf
MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 2 MMBT5550 140 EMITTER MMBT5551 160 Collector-Base Voltage VCBO Vdc MARKING MMBT5550 160 3 DIAGRAM MMBT5551 18
ffb5551.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
2n5551 mmbt5551.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fmb5551.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt5551lt1g.pdf
MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 MAXIMUM RATINGS EMITTER Rating Symbol Va
2sc5551ae 2sc5551af.pdf
Ordering number ENA1118A 2SC5551A RF Transistor http //onsemi.com 30V, 300mA, fT=3.5GHz, NPN Single PCP Features High fT (fT=3.5GHz typ) Large current (IC=300mA) Large allowable collector dissipation (1.3W max) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Volta
2n5551.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N5551G-x-AB3-R SOT-89 B C E Tape
pzt5551.pdf
UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reel www.unisonic.com.tw 1of 4 Copyright 20
mmbt5551.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN 1 power transistor. It is characterized with high breakdown voltage, 2 high current gain and high switching speed. SOT-23 (JEDEC TO-236) FEATURES * High Collector-Emitter Voltage VCEO=160V * High c
2n5551g.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-
2n5551.pdf
2N5551 NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier C High voltage application Features B High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage E VCE(sat)=0.5V(MAX.) TO-92 Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551
2n5551n.pdf
2N5551N Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9
stc5551f.pdf
STC5551F NPN Silicon Transistor PIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51 DEVICE CODE, hF
2n5551cn.pdf
2N5551CN Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92N Outline Dimensions unit mm 4.20
sbt5551.pdf
SBT5551 NPN Silicon Transistor PIN Connection Descriptions General purpose amplifier High voltage application Features high collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Complementary pair with SBT5401 SOT-23 Ordering Information Type NO. Marking Package Code FNF SBT5551 SOT-2
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2n5551dcsm.pdf
2N5551DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 160V CEO 6.22 0.13 A = 1.27 0.13 I = 0.6A C (0.
2n5551csm.pdf
2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 FEATURES rad. (0.012) SILICON PLANAR EPITAXIAL NPN 3 TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 CECC SCREENING OPTIONS 1.9
mmbt5551w.pdf
MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5401W 1 1 2 2 K E D Collector H J F G 3 MARKING K4N Mi
2n5551.pdf
2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55 0.2 3.5 0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 0.07 46+0.1 0. 0.1 (1.27 Typ.) 1 Emitter +0.2 1.25 0.2 2 Base 1 2 3 3 Colle
czt5551.pdf
CZT5551 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 5 5 1 D 0.02 0.10 1 6.30 6.70 Date Code E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3
mmbt5551.pdf
MMBT5551 NPN Silicon Elek t ronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 B 1.200 1.400 3 FEATURES C 0.890 1.110 S Top View B 1 2 D 0.370 0.500 G 1.780 2.040 Power dissipation V G H 0.013 0.100 o PCM 0.3 W (Tamb=25 C) J 0.085 0.177 C K 0.450 0.600 Collect
bcp5551.pdf
BCP5551 NPN Epitaxial Elektronische Bauelemente Planar Transistor RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. Marking 5551 C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 XXXX E 2.40 2
2n5551.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector
cmbt5551.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N P N HIGH VOLTAGE TRANSISTOR N P N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCBO max. 180 V Collector emitter voltage
ad-mmbt5551.pdf
www.jscj-elec.com AD-MMBT5551 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5551 Series Plastic-Encapsulated Transistor AD-MMBT5551 series Transistor (NPN) FEATURES Complementary to AD-MMBT5401 series Ideal for medium power amplification and switching AEC-Q101 qualified MARKING G1 = Device code G1 EQUIVALENT CIRCUIT 3 1 2 Versio
cxt5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L CXT5551 TRANSISTOR (NPN) FEATURES 1 Switching and amplification in high voltage 1. BASE Applications such as telephony 2. COLLECTOR Low current(max. 600mA) 3. EMITTER High voltage(max.180V) Marking 1G6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) S
2n5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE General Purpose Switching Application 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Bas
mmdt5551.pdf
J C ET DUAL TRANSISTOR (NPN+NPN) 6 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 1 2 Ideal for Medium Power Amplification and Switching 3
2n5551k.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551K TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE Equivalent Circuit 2N5551K=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code
czt5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5551 TRANSISTOR (NPN) FEATURES High Voltage 1. BASE High Voltage Amplifier Application 2. COLLECTOR MARKING 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBO V Collector-Emitter Volt
mmbt5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage
mmst5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5551 TRANSISTOR (NPN) SOT 323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter
2n5551.pdf
SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=0.2V(Max.
2n5551s.pdf
SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + A 2.93 0.20 B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 VCBO=180V, VCEO=160V 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 ICBO=50nA(Max.) VCB=120V J 0.13+
2n5551c.pdf
SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=0.2V(Max.),
2n5551sc.pdf
SEMICONDUCTOR 2N5551SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L FEATURES High Collector Breakdwon Voltage DIM MILLIMETERS _ + A 2.90 0.1 2 3 VCBO=180V, VCEO=160V B 1.30+0.20/-0.15 C 1.30 MAX Low Leakage Current. 1 D 0.40+0.15/-0.05 ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20 G 1.90 Low Saturatio
mmbt5550gh mmbt5551gh.pdf
Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH 1 1 BASE MMBT5551GH 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 140 Vdc Collector Base Voltage V CBO 160 Vdc Emitter B
cxt5551.pdf
CXT5551 TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage 1 Applications such as telephony 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking 1G6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V
mmbt5551.pdf
MMBT5551 TRANSISTOR(NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 6
mmst5551.pdf
MMST5551 TRANSISTOR(NPN) SOT 323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-
mmbt5551.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5551 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCEO 160 Vdc -
cxt5551.pdf
CXT5551 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 Switching and amplification in high voltage 2.4 3.75 Applications such as telephony 0.8 MIN Low current(max. 600mA) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 High voltage(max.180v) 0.37 1.5 3.0 Marking 1G6 Dimensions in inches and (mil
2n5551.pdf
2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V
mmdt5551.pdf
MMDT5551 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage
mmbt5551.pdf
MMBT5551 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Ba
2n5551.pdf
2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg
pzt5551.pdf
PZT5551 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 160 VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PD Total Device Disspation 1.5 W
wtm5551.pdf
WTM5551 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Switching and amplification in high Voltage Applications such as Telephony. * Low Current(Max. 600mA) * High Voltage(Max. 180V) Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C Unless Otheerwise Noted) Rating Symbol Value Unit VCBO 180
mmbt5551dw1t1.pdf
FM120-M MMBT5551DW1T1 WILLAS THRU DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low pr FEATUREofile surface mounted appli
mmbt5551wt1.pdf
FM120-M WILLAS THRU MMBT5551WT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY DUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in
hmbt5551.pdf
Spec. No. HE6838 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2004.09.07 MICROELECTRONICS CORP. Page No. 1/4 HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................
hm5551.pdf
Spec. No. HE9507 HI-SINCERITY Issued Date 1996.04.09 Revised Date 2004.11.24 MICROELECTRONICS CORP. Page No. 1/4 HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. SOT-89 Features High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) Complements to PNP type HM5401 Abs
h2n5551.pdf
Spec. No. HE6219 HI-SINCERITY Issued Date 1992.09.21 Revised Date 2004.12.28 MICROELECTRONICS CORP. Page No. 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings Maximum Temp
2n5551.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony 1. EMITTER Low current(max. 600mA) 2. BASE High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parame
mmbt5551lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM 0.6 A Collector-base voltage V(BR)CBO 180 V Operating and storage junction temperature range Unit mm TJ, T
pzt5551l3.pdf
Spec. No. C208L3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2008.07.04 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor PZT5551L3 Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT
btn5551a3.pdf
Spec. No. C208A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT
btn5551k3.pdf
Spec. No. C208K3 Issued Date 2012.06.28 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTN5551K3 Features High breakdown voltage, BV 160V CEO Pb-free lead plating package Symbol Outline BTN5551K3 TO-92L B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Paramete
2n5551.pdf
TO-92 Plastic-Encapsulate Transistors TO-92 TO-92 TO-92 TO-92 TRANSISTOR (NPN) 2N5551 TRANSISTOR (NPN) TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES FEATURES FEATURES FEATURES Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage 1. EMlTTER
mmbt5551 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B
2n5551.pdf
2N5551 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , 2N5401 High voltage, complementary Pair with 2N5401. / Applications General purpose high voltage amplifier. / Equival
mmbt5551.pdf
MMBT5551 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , MMBT5401 High voltage, complementary pair with MMBT5401. / Applications General purpose high voltage amplifier. / Eq
mmbt5551t.pdf
MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , MMBT5401T(BR3CG5401T) High voltage, complementary pair with MMBT5401T(BR3CG5401T). / Applications General purpose high voltag
2n5550 2n5551.pdf
2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)
2n25550 2n25551.pdf
2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)
mmbt5551.pdf
MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O
lmbt5551dw1t1g.pdf
LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 DEVICE MARKING AND ORDERING INFORMATION 5 4 De
lmbt5550lt1g lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3
lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3
lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3
lmbt5551lt1g lmbt5551lt3g.pdf
LMBT5551LT1G S-LMBT5551LT1G High Voltage Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. SOT23 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMB
lmbt5551dw1t1g lmbt5551dw1t3g.pdf
LMBT5551DW1T1G S-LMBT5551DW1T1G DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 1. FEATURES We declare that the material of product compliance with SC88(SOT-363) RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 C2 B1 E1 qualified and PPAP capable. 2. DEVICE MARKING AND ORD
h5551.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage Vceo=160V. CollectorDissipation Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150
kxt5551.pdf
SMD Type Product specification KXT5551 (CXT5551) SOT-89 Unit mm +0.1 4.50+0.1 1.50-0.1 -0.1 1.80+0.1 -0.1 Features High current (max. 500mA). Low voltage (max. 150 V). +0.1 +0.1 0.48-0.1 0.53+0.1 0.44-0.1 -0.1 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter vo
kmbt5551.pdf
SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistor SMD Type T Product specification KMBT5551(MMBT5551) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra
2n5551.pdf
SEMICONDUCTOR 2N5551 TECHNICAL DATA 2N5551 TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Unit G 0.85 H 0.45 VCBO Collector-Base Voltage 180 V _ H J 14.00 0.50 + L 2.30 F F VCEO Collector-E
fmbt5551lg.pdf
FMBT5401LG High Voltage Transistors Features Package outline Pb-Free package is available. 3 Device Marking And Ordering Information Device Marking And Ordering Information Device Package Shipping 1 FMBT5401LG SOT-23 3000/Tape&Reel 2 SOT 23 Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO -150 Vdc 3 COLLECTOR Collector-Base Voltage VCBO -160 Vdc E
cxt5551.pdf
SMD Type Transistors NPN Transistors CXT5551 (KXT5551) Features 1.70 0.1 High current (max. 600mA). Low voltage (max. 160 V). Comlementary to CXT5401 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector
mmdt5551.pdf
SMD Type Transistors NPN Transistors MMDT5551 (KMDT5551) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (NPN+NPN) Complementary PNP Type Available(MMDT5401) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160
dmmt5551.pdf
SMD Type Transistors NPN Transistors DMMT5551 (KMMT5551) ( ) SOT-23-6 Unit mm 0.4+0.1 Features -0.1 Epitaxial Planar Die Construction 6 5 4 Complementary PNP Type Available (DMMT5401) Ideal for Low Power Amplification and Switching Intrinsically Matched NPN Pair (Note 1) 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 2 3 1 Lead Free/RoHS Compliant
czt5551.pdf
SMD Type Transistors NPN Transistors CZT5551 (KZT5551) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features High Voltage High Voltage Amplifier Application 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle
mmbt5551.pdf
SMD Type Transistors SMD Type NPN Transistors (KMBT5551) MMBT5551 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter volt
kmbt5551.pdf
SMD Type Transistors NPN Transistors KMBT5551(MMBT5551) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V
mmst5551.pdf
SMD Type Transistors NPN Transistors MMST5551 (KMST5551) Features Small Surface Mount Package Ideal for Medium Power Amplification and Switching Complementary to MMST5401 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Volt
mmbt5551.pdf
MMBT5551 NPN HIGH VOLTAGE TRANSISTOR 160 Volts POWER 250 mWatts VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20) MECHANICAL DATA 0.070(1.
cht5551wgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT5551WGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * Suitable for high packing density. CONSTRUCTION 0.65 1.3 0.1 2.0 0.2 0.65 * NPN transistors in one package. 0.3 0.1 1.25 0.1
cht5551gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT5551GP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Small flat package. ( SOT-23 ) * Suitable for high packing density. (1) CONSTRUCTION (3) *NPN SILICON Transistor (2) CONSTRUCTION FT ( ) ( ) .055 1.40
cht5551zgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT5551ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 2.0+0.3 3.00+0.10 CONSTRUCTION *NPN SIL
cht5551sgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT5551SGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-88/SOT-363 FEATURE * Small flat package. ( SC-88/SOT-363 ) * Suitable for high packing density. (1) (6) CONSTRUCTION 0.65 1.2 1.4 2.0 2.2 *NPN SILICON Transistor 0.65
cht5551xgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT5551XGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-62/SOT-89 FEATURE * Suitable for high packing density. 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 CONSTRUCTION *NPN SILICON Transistor +0.08 0.45-0.05 +0.08 +0.08 0.40-0.05 0.
dmbt5551.pdf
DC COMPONENTS CO., LTD. DMBT5551 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .
2n5551a.pdf
MAIN CHARACTERISTICS FEATURES IC 600mA Epitaxial silicon VCEO 160V High switching speed PC 625mW 2N5401A Complementary to 2N5401A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
mmbt5551.pdf
Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G
kbt5551c.pdf
KBT5551C NPN Silicon Transistor 2018.03 02 2018.03 02 2018.03 02 2018.03 02 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose ampli
3dg5551.pdf
2N5551(3DG5551) NPN /SILICON NPN TRANSISTOR /Purpose General purpose high voltage amplifier. , 2N5401(3CG5401) /Features High voltage, complementary Pair with 2N5401(3CG5401). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 180 V CBO V 1
pt23t5551.pdf
PT23T5551 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements Pure tin plating 7 17 um Pin flatness 3mil Structu
cxt5551.pdf
CXT5551 Plastic-Encapsulate Transistors Features C Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) E C B SOT-89-3L top view Schematic diagram Application C High voltage amplifier application 1G6 C E B Marking and pin assignment Maximum Ratings(Ta=25 unless otherwise noted) Symbol Pa
2n5551.pdf
2N5551 TO-92 Plastic-Encapsulate Transistors Equivalent Circuit FEATURES General Purpose Switching Application PNP Transistors TO 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curre
czt5551a czt5551n czt5551c.pdf
CZT5551 NPN Transistor Epitaxial Planar Transistor SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 o 5 1.40 1.80 MAXIMUM RATINGS* (Tam
mmbt5551.pdf
MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collecto
mmbt5551.pdf
R UMW UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage
mmbt5551.pdf
MMBT5551 SOT-23 Features (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 oC, unless otherwise noted) A Parameter Symbol Value Unit Collector Base Voltage V 180 V CBO Collector Emitter Voltage V 160 V CEO Emitter Base Voltage V 6 V EBO Collector Current I 600 mA C Powe
mmbt5550 mmbt5551.pdf
MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 140V 160V@I =1mA) CEO C This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmental standards of
mmbt5551.pdf
MMBT5551 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING G1 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO
2n5551.pdf
2N5551 TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 2N5551=Device code 2N XXX=Code 1 E B C ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5551 TO-92 Bulk 1000pcs/Bag 2N5551-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25 unless otherwise
mmbt5551.pdf
MMBT5551 High Voltage Transistors NPN Silicon FEATURES Complementary to MMBT5401 SOT-23 Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio
mmbt5551.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V
2n5551.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO 92 FEATURES Power dissipation PCM 0.625 W Tamb=25 1.EMITTER Collector current ICM 0.6 A 2.BASE Collector-base voltage 3.COLLECTOR V(BR)CBO 180 V 1 2 3 Operating and storage junction temperature range TJ Tstg -55 t
mmbt5551.pdf
MMBT5551 HD-ST0.44 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking G1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V C CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Coll
tmpt5551 tmpt6427 tmpt6428 tmpt6429 tmpta05 tmpta06 tmpta12 tmpta13 tmpta14 tmpta20 tmpta42 tmpta43.pdf
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf
2n5551.pdf
2N5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (2N5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter vo
mmbt5551.pdf
MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec
mmbt5551.pdf
MMBT5551 TRANSISTOR(NPN) FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R
mmbt5551-ms.pdf
www.msksemi.com MMBT5551-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching 1. BASE 2. EMITTER MARKING G1 SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt
mmbt5551.pdf
MMBT5551 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1
mmbt5551-l mmbt5551-h.pdf
Jingdao Microelectronics co.LTD MMBT5551 MMBT5551 SOT-23 NPN TRANSISTOR 3 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 180 V 2.EMITTER Collector Emitter V
mmbt5551dw.pdf
MMBT5551DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT55
sxt5551.pdf
SXT5551 High Voltage Transistors DESCRIPTION & FEATURES High Breakdown Voltage(BVCBO=180V) DEVICE MARKING DEVICE MARKING SXT5551=G1 SMALL-SIGNAL CHARA CTERISTISTICS SIGNAL CHARA CTERISTISTICS REV.08 1 of 2 SXT5551 ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS (TA=25 unless otherwise noted) SOT-89 SOT-89 DIMENSION SOT REV.08 2 of 2
mmbt5551.pdf
Integrated in OVP&OCP products provider MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi
mmbt5551.pdf
MMBT5551 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High Voltage Transistors Simplified outline(SOT-23) Pb-Free Packages are Available Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.6 A Collector Powe
mmbt5551l mmbt5551h.pdf
MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack
mmbt5551.pdf
MMBT5551 MMBT5551 AO3400 SI2305 MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1 BASE MARKING G1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Volt
mmbt5551q.pdf
RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solder
mmdt5551.pdf
RoHS COMPLIANT MMDT5551 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K4N Equivalent circuit 1 / 5 S-S3209 Yangzhou
mmbt5551.pdf
RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking G1 Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0
mmst5551.pdf
RoHS COMPLIANT MMST5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking K4N Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC
mmbt5551.pdf
MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5551 G1 . Maximum Ra
2n5551u.pdf
2N5551U NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 500 mW O Junction Temperature Tj 150 C O Storage T
mmbt5551.pdf
MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren
mmdt5551dw.pdf
MMDT5551DW DUAL TRANSISTOR (NPN+NPN) 6 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 1 2 Ideal for Medium Power Amplification and Switching 3 G1
mmbt5551t.pdf
MMBT5551T TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V V CEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V I Collector Current -Continuous 0.6 A C P Collector Power Dissipation 200
fht5551-me.pdf
FHT5551-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona
mmbt5551.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5551 FEATURES NPN High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage V 160 Vdc CEO - Collector Base Voltage V 180 Vdc CBO - Emitter
mmbt5551.pdf
MMBT5551 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 160Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V. Collector current IC=0.6A. ansition frequency fT>100MHz @ Tr IC=10mAdc, VCE=6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S
mmbt5551.pdf
MMBT5551 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb
mmbt5551.pdf
NPN MMBT5551 MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter
mmbt5551-l mmbt5551-h.pdf
MMBT5551 TRANSISTOR(NPN) SOT-23 Plastic-Encapsulate Transistors SOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL 94V-0 Mounting Position Any Marking G1 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl
cxt5551.pdf
CXT5551 NPN Silicon General Purpose Transistors Features SOT-89-3L NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 1.70 0.1 Mechanical data Epoxy UL94-V0 rated flame retardant Case Molded plastic, SOT-89-3L Terminals Solder plated, solderable per 0.42 0.1 0.46 0.
hmbt5551.pdf
HMBT5551 NPN-TRANSISTOR NPN,600mA,180V NPN NPN High Voltage Transistor SMD HMBT5551 HMBT5551LT1 Excellent hFE linearity NPN, BEC Low noise High Voltage Transistors Complementary to HMBT5401 Transistor Polarity NPN Transistor pinout BEC MMBT5551
Другие транзисторы: MMBT3906L3, MMS8050, MMS8550, MMS9014, MMS9015, RF3356, 2222A, 5401, 2SD2499, MOT13003C, MOT13003D, 2SA1015-MS, 2SB772-MS, 2SC1623-MS, 2SC1815-MS, 2SD882-MS, A733-MS
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