5551 Datasheet, Equivalent, Cross Reference Search

MOT 5551NPN-TRANSISTORNPN NPN High Voltage Transistor SMD 5551 NPN, BEC Complementary to5551 General Purpose Transistors Transistor Polarity: NPN Transistor pinout: BEC SOT-23 Package Marking Code: G1 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5550/DAmplifier Transistors2N5550NPN Silicon*2N5551*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5550 2N5551 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 140 160 VdcCollectorBase Voltage VCBO 160 180 VdcEmitterB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5550LT1/DMMBT5550LT1High Voltage Transistors*MMBT5551LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 140 VdcCollectorBase Voltage VCBO 160 VdcCASE 31808, STYLE 6SOT23 (TO236AB)Emitter

Data Sheet No. PD60168-CIPS5551TFULLY PROTECTED HIGH SIDE POWER MOSFET SWITCHFeaturesProduct Summary Over temperature shutdown Over current shutdownRds(on) 6.0m (max) Active clamp Input referenced to + VccV clamp 40V E.S.D protection Input referenced to VccIshutdown 100ADescriptionVcc (op.) 5.5 - 18VThe IPS5551T is a fully protected three ter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistorsProduct specification 2004 Oct 28Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187PMST5550; PMST5551NPN high-voltage transistorsProduct data sheet 1999 Apr 29Supersedes data of 1997 May 20 NXP Semiconductors Product data sheetNPN high-voltage transistors PMST5550; PMST5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATION

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATION

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT5551NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST5550; PMST5551NPN high-voltage transistors1999 Apr 29Product specificationSupersedes data of 1997 May 20Philips Semiconductors Product specificationNPN high-voltage transistors PMST5550; PMST5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLI

2N5551HRHi-Rel NPN bipolar transistor 160 V, 0.5 ADatasheet - production dataFeatures3BVCEO 160 V11 IC (max) 0.5 A223HFE at 5 V - 10 mA > 80 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5551HR is a silicon planar NPN transistor spe

Ordering number:ENN6328NPN Epitaxial Planar Silicon Transistor2SC5551High-Frequency Medium-OutputAmplifier ApplicationsFeatures Package Dimensions High fT : (fT=3.5GHz typ).unit:mm Large current : (IC=300mA).2038A Large allowable collector dissipation (1.3W max).[2SC5551]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSA

Ordering number : ENA1118 2SC5551ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Medium-Output2SC5551AAmplifier ApplicationsFeatures High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un

KST5551Amplifier Transistor Collector-Emitter Voltage: VCEO=160V 3 Collector Power Dissipation: PC (max)=350mW2SOT-231Mark: G11. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base

April 20062N5551- MMBT5551tmNPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)2N5551 MMBT555132TO-92SOT-2

FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purpose high voltage amplifiers.C1 E1 is Pin 1.C2B1E1SC70-6Mark: .P1Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6.0 VIC Collector Curr

June 20092N5551 / MMBT5551NPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT555132TO-92SOT-23

FMB5551C2NPN General Purpose AmplifierE1C1SuperSOT-6 Surface Mount Package This device is designed for general purpose high voltage amplifiers and gas discharge display driving. B2E2 Sourced from process 16. B1pin #1 See MMBT5551 for characteristics.SuperSOTTM-6Mark: .3SDot denotes pin #1Absolute Maximum Ratings Ta=25C unless otherwise notedSymbol Pa

FMBS5551NCNPN General Purpose AmplifierC1 This device is designed for general purpose high voltage amplifiers Eand gas discharge display drivers.BCCpin #1SuperSOTTM-6 singleMark: .3S1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Volta

September 2008FMBM5551 NPN General Purpose Amplifier This device has matched dies Sourced from process 16. See MMBT5551 for characteristicsC2E1C1B2E2B1pin #1SuperSOTTM-6Mark: .3S2Dot denotes pin #1Absolute Maximum Ratings *Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT5551NPN high-voltage transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN high-voltage transistor PMBT5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATIONS3 collector Gene

2N5551 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 180 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 625 mWJu

CYT5551HCDSURFACE MOUNTwww.centralsemi.comDUAL, ISOLATEDDESCRIPTION:HIGH CURRENTThe CENTRAL SEMICONDUCTOR CYT5551HCD NPN SILICON TRANSISTORStype consists of two (2) isolated NPN high current silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini device is ideal for high current applicati

CMPT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FFSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage

CXT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage: 250VSOT-89 CASE Low

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CZT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES:SOT-223 CASESOT-223 CASE High Collector Breakdown Voltage

CXT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBERSOT-89 CASEMAXIMUM RAT

CMPT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551E is an NPN Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: C555FEATURES: High Collector Breakdown Voltag

CZT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCol

CYT5551Dwww.centralsemi.comSURFACE MOUNTDUAL, ISOLATEDDESCRIPTION:NPN SILICON TRANSISTORSThe CENTRAL SEMICONDUCTOR CYT5551D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini device is ideal for high voltage amplifier applications.MARKING: FULL P

CMLT5551HCwww.centralsemi.comSURFACE MOUNT SILICONHIGH CURRENTDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT5551HC is a high current NPN silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage and high current amplifier applications. MARKING CODE: C51S

CZT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASE

CMLT5551www.centralsemi.comSURFACE MOUNT SILICONDUAL, HIGH VOLTAGEDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage amplifier applications.MARKING CODE: 5C5

CTLT5551-M832DSURFACE MOUNTwww.centralsemi.comDUAL, HIGH VOLTAGEDESCRIPTION:GENERAL PURPOSEThe CENTRAL SEMICONDUCTOR CTLT5551-M832D NPN SILICON TRANSISTORSis a Dual NPN General Purpose, High Voltage Amplifier Transistor packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLMTM) surface mount case. These devices are designed for applications where smal

CMPT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHCSOT-23 CASEMAXIMUM RATINGS:

CMUT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 5C1FEATURES: High Collector Breakdown Voltag

CMUT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 55CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage

A Product Line ofDiodes IncorporatedDXT5551P5160V NPN HIGH VOLTAGE TRANSISTOR PowerDI5 Features and Benefits Mechanical Data 43% smaller than SOT223; 60% smaller than TO252 Case: PowerDI5 Maximum height just 1.1mm Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Rated up to 2.25W Moisture Sen

DZT5551160V NPN VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: molded plastic. Green molding compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage (150mV max @10mA) Terminals: Finish -

MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Type Available (MMDT5401) C2 B1 E1Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 B C Ultra-Small Surface Mount Package B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1C 2.00 2.20 "Gr

DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Complementary PNP Type Available (DMMT5401) Dim Min Max Typ Ideal for Low Power Amplification and Switching A 0.35 0.50 0.38 Intrinsically Matched NPN Pair (Note 1) B CB 1.50 1.70 1.60 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)

ZXTN5551FL160V, SOT23, NPN High voltage transistorSummary BVCEO > 160VBVEBO > 6VIC(cont) = 600mA PD = 330mWComplementary part number ZXTP5401FLDescriptionCA high voltage NPN transistor in a small outline surface mount package.FeaturesB 160V rating SOT23 packageEApplicationsE High voltage amplificationCOrdering informationDevice Reel size Tape w

SOT SI I O A A T 0HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V VV V T i 8 I V V T 8 I V V

DZT5551Q 160V NPN VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT223 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Ter

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z160V, SOT89, NPN high voltage transistor SummaryBVCEO > 160VBVEBO > 6VIC(cont) = 600mAPD = 1.2W Complementary part number ZXTP5401ZDescriptionCA high voltage NPN transistor in a small outline surface mount packageFeaturesB 160V rating SOT89 packageEApplicationsE High voltage amplificatio

MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 160V Case: SOT-23 Case Material: Molded Plastic, Green molding compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Complementary PNP Type Available (MMBT5401) Moisture Sensitivity: Level 1 per J-STD-020 Totally

NOT RECOMMENDED FOR NEW DESIGN A Product Line ofUSE DZT5551Diodes IncorporatedZXTN5551G160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020

DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 160V Case: SOT89 IC = 600mA High Collector Current Case Material: Molded Plastic, Green Molding Compound Complementary PNP Type: DXT5401 UL Flammability Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020 To

MMST5551180V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Ultra-Small Surface Mount Package Case Material: Molded Plastic. Green Molding Compound. Complementary NPN Type: MMST5401 UL Flammability Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1

MCCMicro Commercial ComponentsTMMMBT555120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC

MMST5551Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSSmall Signal Compliant. See Ordering Information)TransistorMaximum RatingsSOT-323 Operating Junction Temperature Range: -55 to +150 Storage

MCCMicro Commercial ComponentsTM2N555120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features This device is designed for general purpose high voltage amplifiers NPN Generaland gas discharge display drivers.Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Tr

MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMDT5551CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1Transistors C

MMBT5550L, MMBT5551LHigh Voltage TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector

MMBT5551M3NPN High VoltageTransistorThe MMBT5551M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose high voltageapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.COLLECTORFeatures3 Reduces Board Spa

2N5550, 2N5551Preferred DeviceAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO Vdc2N5550 14012N5551 160EMITTERCollector - Base Voltage VCBO Vdc2N5550 1602N5551 180Emitter - Base Voltage VEBO 6.0 VdcTO-92CASE 29Collector Curr

March March 201882N5551 / MMBT5551NPN General-Purpose AmplifierDescriptionThis device is designed for general-purpose high-voltageamplifiers and gas discharge display drivers. 2N5551 MMBT555132TO-92SOT-231Marking: 3S1. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Top Mark Package Packing Method2N5551TA 5551 TO-92 3L Ammo2N5551TFR 5551 TO-92 3L

MMBT5550LT1G,MMBT5551LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS 1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc2MMBT5550 140EMITTERMMBT5551160Collector-Base Voltage VCBO VdcMARKINGMMBT5550 1603DIAGRAMMMBT555118

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT5550L, MMBT5551L,SMMBT5551LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2MAXIMUM RATINGSEMITTERRating Symbol Va

Ordering number : ENA1118A2SC5551ARF Transistorhttp://onsemi.com30V, 300mA, fT=3.5GHz, NPN Single PCPFeatures High fT : (fT=3.5GHz typ) Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 40 VCollector-to-Emitter Volta

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2N5551G-x-AB3-R SOT-89 B C E Tape

UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reelwww.unisonic.com.tw 1of 4 Copyright 20

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN 1power transistor. It is characterized with high breakdown voltage, 2high current gain and high switching speed. SOT-23(JEDEC TO-236) FEATURES * High Collector-Emitter Voltage: VCEO=160V * High c

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-

2N5551NPN Silicon TransistorDescriptions PIN Connection General purpose amplifier C High voltage application Features B High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : EVCE(sat)=0.5V(MAX.) TO-92 Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551

2N5551NSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9

SBT5551FNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier High voltage application 3 Features high collector breakdown voltage : 1 VCBO = 180V, VCEO = 160V Low collector saturation voltage : 2VCE(sat)=0.5V(MAX.) SOT-23F Complementary pair with SBT5401F Ordering Information Type NO. Marking Package Code FNF

STC5551FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 : VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51: DEVICE CODE, : hF

2N5551CNSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92NOutline Dimensions unit : mm 4.20

SBT5551NPN Silicon TransistorPIN ConnectionDescriptions General purpose amplifier High voltage application Features high collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Complementary pair with SBT5401 SOT-23 Ordering Information Type NO. Marking Package Code FNF SBT5551 SOT-2

2N5551DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 160V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.

2N5551CSM HIGH VOLTAGE NPNSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31 FEATURESrad.(0.012) SILICON PLANAR EPITAXIAL NPN 3TRANSISTOR HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.9

MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5401W 11 22K EDCollector H JF G3 MARKING: K4N Mi

2N5551NPN Silicon Elektronische BauelementeGeneral Purpose Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-924.550.2 3.50.2FEATURES* Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.080.0746+0.10. 0.1(1.27 Typ.)1: Emitter+0.21.250.22: Base1 2 33: Colle

CZT5551NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages.REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 5 5 1D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3

MMBT5551NPN SiliconElek t ronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free SOT-23Dim Min MaxAL A 2.800 3.040B 1.200 1.4003 FEATURESC 0.890 1.110STop ViewB1 2D 0.370 0.500G 1.780 2.040 Power dissipation V GH 0.013 0.100o PCM: 0.3 W (Tamb=25 C) J 0.085 0.177CK 0.450 0.600 Collect

BCP5551NPN EpitaxialElektronische BauelementePlanar TransistorRoHS Compliant ProductSOT-89 FeaturesDesigned for gereral prupose application requiringhigh breakdown voltage.1231.BASE2.COLLECTOR3.EMITTERREF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. Marking:5551C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 XXXXE 2.40 2

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551TO- 92CBECBEHigh Voltage NPN Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 160 VCollector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5551SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5551 = G1Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 180 VCollectoremitter voltage

www.jscj-elec.com AD-MMBT5551 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5551 Series Plastic-Encapsulated Transistor AD-MMBT5551 series Transistor (NPN) FEATURES Complementary to AD-MMBT5401 series Ideal for medium power amplification and switching AEC-Q101 qualified MARKING G1 = Device code G1 EQUIVALENT CIRCUIT 3 1 2 Versio

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L CXT5551 TRANSISTOR (NPN) FEATURES 1 Switching and amplification in high voltage 1. BASE Applications such as telephony 2. COLLECTOR Low current(max. 600mA) 3. EMITTER High voltage(max.180V) Marking: 1G6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE General Purpose Switching Application 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Bas

J C ET DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 12 Ideal for Medium Power Amplification and Switching 3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551K TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE Equivalent Circuit 2N5551K=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5551 TRANSISTOR (NPN) FEATURES High Voltage 1. BASE High Voltage Amplifier Application 2. COLLECTOR MARKING: 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBOV Collector-Emitter Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5551 TRANSISTOR (NPN) SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter

SEMICONDUCTOR 2N5551TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEK Low Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00 Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.

SEMICONDUCTOR 2N5551STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=180V, VCEO=160V 3 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=50nA(Max.) VCB=120VJ 0.13+

SEMICONDUCTOR 2N5551CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.),

SEMICONDUCTOR 2N5551SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LFEATURES High Collector Breakdwon VoltageDIM MILLIMETERS_+A 2.90 0.123: VCBO=180V, VCEO=160VB 1.30+0.20/-0.15C 1.30 MAXLow Leakage Current. 1D 0.40+0.15/-0.05: ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20G 1.90Low Saturatio

Zowie Technology CorporationHigh Voltage TransistorsLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.3COLLECTOR3MMBT5550GH11BASEMMBT5551GH 22SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 140 VdcCollectorBase Voltage V CBO 160 VdcEmitterB

CXT5551TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage 1 Applications such as telephony 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking: 1G6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

MMBT5551TRANSISTOR(NPN)SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 6

MMST5551TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBOV Collector-Emitter Voltage 160 V CEOV Emitter-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5551MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter VoltageVCEO 160 Vdc-

CXT5551 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 3. EMITTER SOT-894.6B4.41.61.81.41.4Features2.64.25 Switching and amplification in high voltage 2.43.75Applications such as telephony 0.8MINLow current(max. 600mA) 0.530.400.480.442x)0.13 B0.35 High voltage(max.180v) 0.37 1.53.0Marking: 1G6 Dimensions in inches and (mil

2N5551(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR FeaturesSwitching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V

MMDT5551 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage

MMBT5551 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Ba

2N5551NPN TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol2N5551 UnitCollector-Emitter Voltage VCEO 160 VdcCollector-Base Voltage VCBO 180VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC600 mAdcPDTotal Device Dissipation T =25 C WA0.625Junction Temperature T 150j CStorage, Temperature Tstg

PZT5551NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11 233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V160VCBOCollector-Base Voltage 180 VVEBOEmitter-Base Voltage 6 VICCollector Current (DC) 600 mAPDTotal Device Disspation 1.5 W

WTM5551NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Switching and amplification in high Voltage Applications such as Telephony.* Low Current(Max. 600mA)* High Voltage(Max. 180V)Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otheerwise Noted)Rating Symbol Value UnitVCBO180

FM120-M MMBT5551DW1T1WILLASTHRUDUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low prFEATUREofile surface mounted appli

FM120-M WILLASTHRUMMBT5551WT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKYDUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductMOUNT TRANSISTORPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in

Spec. No. : HE6838HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT5551 is designed for general purpose applications requiring highBreakdown Voltages.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature........................................

Spec. No. : HE9507HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.11.24MICROELECTRONICS CORP.Page No. : 1/4HM5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HM5551 is designed for general purpose applications requiring highbreakdown voltages.SOT-89Features High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) Complements to PNP type HM5401Abs

Spec. No. : HE6219HI-SINCERITYIssued Date : 1992.09.21Revised Date : 2004.12.28MICROELECTRONICS CORP.Page No. : 1/5H2N5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5551 is designed for amplifier transistor.FeaturesTO-92 Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))Absolute Maximum Ratings Maximum Temp

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony 1. EMITTER Low current(max. 600mA) 2. BASE High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parame

Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range Unit: mm TJ, T

Typical Characterisitics 2N5551K hFE ICStatic Characteristic50 1000COMMON EMITTER300uATa=25! 270uA40Ta=100!240uA210uA30180uA100 Ta=25!150uA20120uA90uA106

Spec. No. : C208L3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date : 2008.07.04 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor PZT5551L3Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

Spec. No. : C208A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2012.10.02 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

Spec. No. : C208K3 Issued Date : 2012.06.28 CYStech Electronics Corp.Revised Date : 2012.10.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTN5551K3Features High breakdown voltage, BV 160V CEO Pb-free lead plating package Symbol Outline BTN5551K3 TO-92L BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Paramete

TO-92 Plastic-Encapsulate TransistorsTO-92TO-92TO-92TO-92TRANSISTOR (NPN)2N5551 TRANSISTOR (NPN)TRANSISTOR (NPN)TRANSISTOR (NPN)FEATURESFEATURESFEATURESFEATURES Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage1. EMlTTER

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

2N5551 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , 2N5401 High voltage, complementary Pair with 2N5401. / Applications General purpose high voltage amplifier. / Equival

MMBT5551 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , MMBT5401 High voltage, complementary pair with MMBT5401. / Applications General purpose high voltage amplifier. / Eq

MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , MMBT5401T(BR3CG5401T)High voltage, complementary pair with MMBT5401T(BR3CG5401T). / Applications General purpose high voltag

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 150 C O

LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

LMBT5551LT1GS-LMBT5551LT1GHigh Voltage Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking ShippingLMB

LMBT5551DW1T1GS-LMBT5551DW1T1GDUAL NPN SMALL SIGNAL SURFACEMOUNT TRANSISTOR 1. FEATURESWe declare that the material of product compliance withSC88(SOT-363) RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101C2 B1 E1 qualified and PPAP capable.2. DEVICE MARKING AND ORD

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150

SMD TypeProduct specificationKXT5551 (CXT5551)SOT-89 Unit: mm+0.14.50+0.1 1.50-0.1-0.11.80+0.1-0.1FeaturesHigh current (max. 500mA).Low voltage (max. 150 V).+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter vo

SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorSMD Type TProduct specificationKMBT5551(MMBT5551)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Ra

SEMICONDUCTOR2N5551TECHNICAL DATA2N5551 TRANSISTOR (NPN) B CFEATURES General Purpose Switching Application DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value UnitG 0.85H 0.45VCBO Collector-Base Voltage 180 V _HJ 14.00 0.50+L 2.30F FVCEO Collector-E

FMBT5401LGHigh Voltage TransistorsFeaturesPackage outline Pb-Free package is available.3Device Marking And Ordering InformationDevice Marking And Ordering InformationDevice Package Shipping1FMBT5401LG SOT-23 3000/Tape&Reel2SOT23Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage VCEO -150 Vdc3COLLECTORCollector-Base Voltage VCBO -160 VdcE

SMD Type TransistorsNPN TransistorsCXT5551 (KXT5551)Features 1.70 0.1High current (max. 600mA).Low voltage (max. 160 V). Comlementary to CXT54010.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

SMD Type TransistorsNPN TransistorsMMDT5551 (KMDT5551) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (NPN+NPN) Complementary PNP Type Available(MMDT5401) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160

SMD Type TransistorsNPN TransistorsDMMT5551 (KMMT5551)( )SOT-23-6 Unit:mm0.4+0.1 Features -0.1 Epitaxial Planar Die Construction6 5 4 Complementary PNP Type Available (DMMT5401) Ideal for Low Power Amplification and Switching Intrinsically Matched NPN Pair (Note 1) 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)2 31 Lead Free/RoHS Compliant

SMD Type TransistorsNPN TransistorsCZT5551 (KZT5551)Unit:mmSOT-2236.500.23.000.14 Features High Voltage High Voltage Amplifier Application1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle

SMD Type TransistorsSMD TypeNPN Transistors(KMBT5551)MMBT5551SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter volt

SMD Type TransistorsNPN TransistorsKMBT5551(MMBT5551)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 160 V

SMD Type TransistorsNPN TransistorsMMST5551 (KMST5551) Features Small Surface Mount Package Ideal for Medium Power Amplification and Switching Complementary to MMST54011.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Volt

MMBT5551NPN HIGH VOLTAGE TRANSISTOR160 Volts POWER 250 mWattsVOLTAGEFEATURES0.120(3.04)0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)MECHANICAL DATA0.070(1.

CHENMKO ENTERPRISE CO.,LTDCHT5551WGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* Suitable for high packing density.CONSTRUCTION0.651.30.12.00.20.65* NPN transistors in one package.0.30.11.250.1

CHENMKO ENTERPRISE CO.,LTDCHT5551GPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small flat package. ( SOT-23 )* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN SILICON Transistor(2)CONSTRUCTIONFT( ) ( ).055 1.40

CHENMKO ENTERPRISE CO.,LTDCHT5551ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SIL

CHENMKO ENTERPRISE CO.,LTDCHT5551SGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. ( SC-88/SOT-363 )* Suitable for high packing density.(1) (6)CONSTRUCTION0.651.2~1.4 2.0~2.2*NPN SILICON Transistor0.65

CHENMKO ENTERPRISE CO.,LTDCHT5551XGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-62/SOT-89FEATURE* Suitable for high packing density.4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05CONSTRUCTION*NPN SILICON Transistor+0.080.45-0.05+0.08 +0.080.40-0.05 0.

DC COMPONENTS CO., LTD.DMBT5551DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).

MAIN CHARACTERISTICS FEATURES IC 600mA Epitaxial silicon VCEO 160V High switching speed PC 625mW 2N5401A Complementary to 2N5401A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G

KBT5551C NPN Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose ampli

2N5551(3DG5551) NPN /SILICON NPN TRANSISTOR :/Purpose: General purpose high voltage amplifier. :, 2N5401(3CG5401)/Features: High voltage, complementary Pair with 2N5401(3CG5401). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 180 V CBO V 1

PT23T5551 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

CXT5551Plastic-Encapsulate TransistorsFeaturesC Switching and amplification in high voltageApplications such as telephony Low current(max. 600mA) High voltage(max.180V)ECBSOT-89-3L top view Schematic diagramApplicationC High voltage amplifier application1G6C EBMarking and pin assignment Maximum Ratings(Ta=25 unless otherwise noted)Symbol Pa

2N5551TO-92 Plastic-Encapsulate TransistorsEquivalent Circuit FEATURES General Purpose Switching Application PNP Transistors TO 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

CZT5551NPN Transistor Epitaxial Planar TransistorSOT-223Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages.REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 o 5 1.40 1.80 MAXIMUM RATINGS* (Tam

MMBT5551NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNITVCBO collector-base voltage 180 V VCEO collecto

RUMW UMW MMBT5551SOT-23 Plastic-Encapsulate TransistorsMMBT5551 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage

MMBT5551SOT-23 Features(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 oC, unless otherwise noted)AParameter Symbol Value Unit Collector Base Voltage V 180 V CBO Collector Emitter Voltage V 160 V CEO Emitter Base Voltage V 6 V EBO Collector Current I 600 mA C Powe

MMBT5550 / MMBT5551High Voltage TransistorsNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 140V~ 160V@I =1mA)CEO C This device is designed for general purpose high voltageamplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmentalstandards of

MMBT5551Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesComplementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: G12. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO

2N5551TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 2N5551=Device code 2NXXX=Code 1E B CORDERING INFORMATION Part Number Package Packing Method Pack Quantity2N5551 TO-92 Bulk 1000pcs/Bag2N5551-TA TO-92 Tape 2000pcs/BoxMAXIMUM RATINGS (Ta=25 unless otherwise

MMBT5551High Voltage TransistorsNPN SiliconFEATURES Complementary to MMBT5401SOT-23 Ideal for Medium Power Amplification and SwitchingMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio

SOT-23 Plastic-Encapsulate Transistors Formosa MSMMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO92 FEATURES Power dissipation PCM : 0.625 WTamb=25 1.EMITTER Collector current ICM: 0.6 A 2.BASE Collector-base voltage 3.COLLECTOR V(BR)CBO : 180 V 1 2 3 Operating and storage junction temperature range TJTstg: -55 t

MMBT5551 HD-ST0.44SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking: G1Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V CCEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Coll

2N5551NPN General Purpose TransistorFEATURES Epitaxial planar die construction. Complementary PNP type available (2N5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter vo

MMBT5551NPN General Purpose TransistorFEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec

MMBT5551TRANSISTOR(NPN)FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R

www.msksemi.comMMBT5551-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching1. BASE2. EMITTERMARKING: G1SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt

MMBT5551GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1

Jingdao Microelectronics co.LTD MMBT5551MMBT5551SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 180 V2.EMITTERCollectorEmitter V

MMBT5551DW Descriptions Doublesilicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMBT55

SXT5551High Voltage Transistors DESCRIPTION & FEATURES High Breakdown Voltage(BVCBO=180V) DEVICE MARKINGDEVICE MARKING: SXT5551=G1 SMALL-SIGNAL CHARA CTERISTISTICSSIGNAL CHARA CTERISTISTICS REV.08 1 of 2SXT5551ELECTRICAL CHARACTERISTICS (TCHARACTERISTICS (TA=25 unless otherwise noted) SOT-89SOT-89 DIMENSION SOTREV.08 2 of 2

Integrated inOVP&OCP productsprovider MMBT5551 TRANSISTOR (NPN)FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi

MMBT5551 SOT-23 NPN Transistors321.Base2.EmitterFeatures1 3.CollectorHigh Voltage Transistors Simplified outline(SOT-23)Pb-Free Packages are AvailableAbsolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 160 VEmitter-base voltage VEBO 6 VCollector current-continuous IC 0.6 ACollector Powe

MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 180 V VCEO Collector-Emitter Voltage -

MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT5551MMBT5551AO3400SI2305MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1BASE MARKING: G1 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Volt

RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solder

RoHS COMPLIANT MMDT5551Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4N Equivalent circuit 1 / 5 S-S3209 Yangzhou

RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:G1 Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0

RoHS COMPLIANT MMST5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4N Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC

MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5551 G1 . Maximum Ra

2N5551U NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 180 VCollector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 600 mAPower Dissipation Ptot 500 mWOJunction Temperature Tj 150 C OStorage T

MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

MMDT5551DW DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401)12 Ideal for Medium Power Amplification and Switching3 G1

MMBT5551T TRANSISTOR (NPN)FEATURESComplementary to MMBT5401Ideal for medium power amplification and switchingMARKING: G1MAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsVCBO Collector-Base Voltage180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage6 VI Collector Current -Continuous 0.6 ACP Collector Power Dissipation 200

FHT5551-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additiona

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5551FEATURES NPN High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter VoltageV 160 VdcCEO-Collector Base VoltageV 180 VdcCBO-Emitter

MMBT5551NPN GENERAL PURPOSE SWITCHING TRANSISTOR160Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V.Collector current IC=0.6A.ansition frequency fT>100MHz @ TrIC=10mAdc, VCE=6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: S

MMBT5551BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb

NPN MMBT5551MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter

MMBT5551TRANSISTOR(NPN)SOT-23 Plastic-Encapsulate TransistorsSOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High ReliabilityMechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL: 94V-0 Mounting Position: AnyMarking: G1Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl

CXT5551NPN Silicon General Purpose Transistors FeaturesSOT-89-3L NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 1.70 0.1Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, SOT-89-3L Terminals : Solder plated, solderable per0.42 0.10.46 0.

HMBT5551NPN-TRANSISTORNPN,600mA,180V NPN NPN High Voltage Transistor SMDHMBT5551HMBT5551LT1Excellent hFE linearityNPN, BECLow noiseHigh Voltage TransistorsComplementary to HMBT5401Transistor Polarity: NPNTransistor pinout: BECMMBT5551