Справочник транзисторов. MMBTA42-MS

 

Биполярный транзистор MMBTA42-MS - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MMBTA42-MS

Маркировка: 1D

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.35 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.3 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 50 MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

Аналоги (замена) для MMBTA42-MS

 

 

MMBTA42-MS Datasheet (PDF)

 ..1. Size:5243K  msksemi
mmbta42-ms.pdf

MMBTA42-MS
MMBTA42-MS

www.msksemi.comMMBTA42-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP)1. BASE2. EMITTERSOT23 Marking: 1D 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VColl

 6.1. Size:182K  wietron
mmbta42-43.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42MMBTA43COLLECTORHigh-Voltage NPN Transistor33Surface Mount11BASE2P b Lead(Pb)-Free2EMITTERSOT-23Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage MMBTA42 300VVCEO MMBTA43 200Collector-Base Voltage MMBTA42 300VVCBO MMBTA43 200Emitter-Base Voltage MMBTA42 6.0VEBO V MMBTA43 6.0C

 6.2. Size:176K  comchip
mmbta42-g.pdf

MMBTA42-MS
MMBTA42-MS

General Purpose TransistorMMBTA42-G (NPN)RoHS DeviceFeaturesSOT-23 -High breakdown voltage.0.119(3.00)0.110(2.80) -Low collector-emitter saturation voltage.3 -Ultra small surface mount package.0.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10)

 7.1. Size:152K  motorola
mmbta42l mmbta43.pdf

MMBTA42-MS
MMBTA42-MS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA42LT1/DHigh Voltage Transistors*MMBTA42LT1NPN SiliconCOLLECTORMMBTA43LT13*Motorola Preferred Device1BASE23

 7.2. Size:49K  philips
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA42NPN high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN high-voltage transistor MMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

 7.3. Size:92K  st
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42Small signal NPN transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

 7.4. Size:128K  fairchild semi
mpsa42 mmbta42 pzta42.pdf

MMBTA42-MS
MMBTA42-MS

October 2009MPSA42 / MMBTA42 / PZTA42NPN High Voltage AmplifierFeatures This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42CCE E C BB SOT-23TO-92SOT-223Mark: 1DE B CAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

 7.5. Size:105K  diodes
mmbta42 2.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and

 7.6. Size:292K  diodes
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound. Complementary PNP Type: MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

 7.7. Size:525K  infineon
smbta42 mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

SMBTA42/MMBTA42NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage23 Complementary types: 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA42/MMBTA42 s1D SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit300 VCollector-emitter voltage VCEO

 7.8. Size:209K  mcc
mmbta42 sot-23.pdf

MMBTA42-MS
MMBTA42-MS

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMBTA42Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon HighRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1

 7.9. Size:121K  onsemi
mmbta42lt smmbta42l mmbta43l.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1BASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symbol Value

 7.10. Size:93K  onsemi
mmbta42lt1g.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

 7.11. Size:89K  onsemi
mmbta42lt1 mmbta43lt1.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42LT1G,MMBTA43LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2Characteristic Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO VdcMMBTA42 300MMBTA43 2003Collector-Base Voltage VCBO VdcMMBTA42 300MMBTA43 200 12Emitter-B

 7.12. Size:234K  onsemi
mmbta42l smmbta42l mmbta43l.pdf

MMBTA42-MS
MMBTA42-MS

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.13. Size:93K  onsemi
mmbta42lt3g.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

 7.14. Size:91K  utc
mmbta42 mmbta43.pdf

MMBTA42-MS
MMBTA42-MS

UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 12* Collector-Emitter voltage: VCEO=300V(MMBTA42) SOT-23* Collector-Emitter voltage: VCEO=200V(MMBTA43) (JEDEC TO-236)* High current gain * Coll

 7.15. Size:102K  utc
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW Lead-free: MMBTA42L Halogen-free: MMBTA42G ORDERING INFORMA

 7.16. Size:132K  secos
mmbta42w.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42WNPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42W120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10

 7.17. Size:282K  secos
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42NPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

 7.18. Size:1511K  jiangsu
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base

 7.19. Size:235K  kec
mmbta42 mmbta43.pdf

MMBTA42-MS
MMBTA42-MS

SEMICONDUCTOR MMBTA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA92/93._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

 7.20. Size:1596K  htsemi
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42TRANSISTOR(NPN)FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VI

 7.21. Size:291K  gsme
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA42 GMA43MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA42 GMA43 Collector-Emitter VoltageVCEO 300 200 Vdc-

 7.22. Size:193K  lge
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage

 7.23. Size:268K  shenzhen
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector

 7.24. Size:222K  can-sheng
mmbta42 sot-23.pdf

MMBTA42-MS
MMBTA42-MS

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

 7.25. Size:786K  blue-rocket-elect
mmbta42t.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA92T(BR3CG92T)High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).

 7.26. Size:803K  blue-rocket-elect
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications

 7.27. Size:222K  first silicon
mmbta42f.pdf

MMBTA42-MS
MMBTA42-MS

SEMICONDUCTORMMBTA42FTECHNICAL DATATRANSISTOR (NPN) MMBTA42FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A42 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

 7.28. Size:196K  first silicon
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

SEMICONDUCTORMMBTA42/43TECHNICAL DATAHigh Voltage TransistorsWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel2 MMBTA42LT3G1D SOT-23 10000/Tape&Reel1 MMBTA43LT1G M1E SOT-23 3000/Tape&ReelSOT-23 10000/Tape&Reel SOT23 MMBTA43LT3G M1

 7.29. Size:988K  kexin
mmbta42w.pdf

MMBTA42-MS
MMBTA42-MS

SMD Type TransistorsNPN TransistorsMMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA3 NPN high voltage transistorsCOLLECTOR1BASE1 Base2 Emitter3 Collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30

 7.30. Size:1393K  kexin
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

SMD Type TransistorsNPN Transistors MMBTA42 (KMBTA42)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 High breakdown voltage3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

 7.31. Size:756K  anbon
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 High Voltage NPN TransistorPackage outlineFeatures High voltageSOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0

 7.32. Size:3419K  fuxinsemi
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltageSOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3211. BASEMarking: 1D 2.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VCo

 7.33. Size:2281K  high diode
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA4 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking: 1DSymbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C

 7.34. Size:118K  jsmsemi
mmbta42.pdf

MMBTA42-MS

 7.35. Size:1144K  mdd
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42SOT-23 Plastic-Encapsulate TransistorSOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage1. BASE Low collector-emitter saturation voltage2. EMITTER Complementary to MMBTA92 (PNP)3. COLLECTORMarking: 1D PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)

 7.36. Size:400K  cn shikues
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltageSOT-23 Complementary to MMBTA92 (PNP)1 BASE 2 EMITTER 3 COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValuealueCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO

 7.37. Size:390K  cn cbi
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VVCEO Collector-Emitter Voltage 3

 7.38. Size:282K  cn fosan
mmbta42 mmbta43.pdf

MMBTA42-MS
MMBTA42-MS

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter VoltageVCEO 300 200 Vdc-Collector-Base VoltageVCBO 300 200 Vdc-Emitter-Base VoltageVEBO 6.0 6.0

 7.39. Size:2003K  cn goodwork
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42NPN GENERAL PURPOSE SWITCHING TRANSISTOR300Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V.Collector current IC=0.3A.ansition frequency fT>50MHz @ TrIC=10mAdc, VCE=20Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol

 7.40. Size:911K  cn hottech
mmbta42.pdf

MMBTA42-MS
MMBTA42-MS

MMBTA42BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

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