MMBTA42-MS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

www.msksemi.comMMBTA42-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP)1. BASE2. EMITTERSOT23 Marking: 1D 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VColl

MMBTA42MMBTA43COLLECTORHigh-Voltage NPN Transistor33Surface Mount11BASE2P b Lead(Pb)-Free2EMITTERSOT-23Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage MMBTA42 300VVCEO MMBTA43 200Collector-Base Voltage MMBTA42 300VVCBO MMBTA43 200Emitter-Base Voltage MMBTA42 6.0VEBO V MMBTA43 6.0C

General Purpose TransistorMMBTA42-G (NPN)RoHS DeviceFeaturesSOT-23 -High breakdown voltage.0.119(3.00)0.110(2.80) -Low collector-emitter saturation voltage.3 -Ultra small surface mount package.0.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10)

MMBTA42 SOT-23 NPN Transistors32 1.Base Features2.Emitter High breakdown voltage1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 300Collector - Emitter Voltage VCEO 300 VEmitter - Base V