Справочник транзисторов. D882-O-T89R

 

Биполярный транзистор D882-O-T89R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: D882-O-T89R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT89

 Аналоги (замена) для D882-O-T89R

 

 

D882-O-T89R Datasheet (PDF)

 ..1. Size:371K  powersilicon
d882-r-te3b d882-r-td3t d882-r-tc2r d882-r-t89r d882-o-te3b d882-o-td3t d882-o-tc2r d882-o-t89r d882-y-te3b d882-y-td3t d882-y-tc2r d882-y-t89r d882-gr-te3b d882-gr-td3t d882-gr-tc2r d882-gr-t89r.pdf

D882-O-T89R

DATA SHEET D882 NPN PLASTIC-ENCAPSULATE TRANSISTORS VOLTAGE 30 V CURRENT 3 A FEATURES COMPLEMENTARY TO B772 COLLECTOR CURRENT IC = 3A E COLLECTOR-EMITTER VOLTAGE VCE = 30V C LEAD FREE AND HALOGEN-FREE SOT-89 E C TO-126 BB MECHANICAL DATA TO-252 TO-251 CASE: SOT-89,TO-126,TO-251,TO-252 TERMINALS: SOLDERABLE PER MIL-STD-202G, METHOD 208 C E E

 8.1. Size:302K  mcc
bd882-o.pdf

D882-O-T89R
D882-O-T89R

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

 9.1. Size:305K  mcc
2sd882-gr-r-o-y.pdf

D882-O-T89R
D882-O-T89R

2SD882-RMCCMicro Commercial ComponentsTM2SD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD882-YPhone: (818) 701-49332SD882-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 9.2. Size:302K  mcc
bd882-r.pdf

D882-O-T89R
D882-O-T89R

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

 9.3. Size:302K  mcc
bd882-gr.pdf

D882-O-T89R
D882-O-T89R

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

 9.4. Size:302K  mcc
bd882-y.pdf

D882-O-T89R
D882-O-T89R

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

 9.5. Size:283K  shenzhen
d882-sot89.pdf

D882-O-T89R
D882-O-T89R

Shenzhen Tuofeng Semiconductor Technology Co., Ltd D882 SOT-89 SOT-89 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junct

 9.6. Size:185K  can-sheng
d882-89 3a.pdf

D882-O-T89R
D882-O-T89R

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com D882 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Power dissipation 2. COLLECTOR MARKING: D8821 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO

 9.7. Size:52K  kexin
2sd882-252.pdf

D882-O-T89R

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 9.8. Size:5243K  msksemi
2sd882-ms.pdf

D882-O-T89R
D882-O-T89R

www.msksemi.com2SD882-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC C

 9.9. Size:564K  cn evvo
2sd882-r 2sd882-q 2sd882-p 2sd882-e.pdf

D882-O-T89R
D882-O-T89R

D882NPN Transistors Features3 NPN transistor High current output up to 3A2 Low Saturation Voltage Complement to 2SB772 1.Base12.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 6 VCollector

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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