Биполярный транзистор 2SA1201Y - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1201Y
Маркировка: DY
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120(typ) MHz
Ёмкость коллекторного перехода (Cc): 30(max) pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT89
2SA1201Y Datasheet (PDF)
2sa1201.pdf
2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit: mm Power Amplifier Applications High voltage: VCEO = -120 V High transition frequency: f = 120 MHz (typ.) T Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25C) Characteri
2sa1201-o.pdf
MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability
2sa1201-y.pdf
MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability
2sa1201.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb
2sa1201.pdf
2SA1201PNP Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-89FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF.
2sa1201.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1201 TRANSISTOR (PNP) 1. BASE FEATURES High voltage 2. COLLECTOR High transition frequency Complementary to 2SC2881 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnitVCBO -120 Collector-Base Voltage V VCEO -120
2sa1201.pdf
2SA1 201SOT-89 TRANSISTOR(PNP)1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Co
2sa1201 sot-89.pdf
2SA1201SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.6 1.82 1.41.43. EMITTER 3 2.64.25Features 2.43.75 0.8 High voltage MIN0.53 High transition frequency 0.400.480.442x)0.13 B0.35 0.371.5 Complementary to 2SC2881 3.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol P
2sa1201.pdf
FM120-M WILLASTHRU2SA1201SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverSOD-123HTRANSISTOR se leakage current and thermal resistance.(PNP) Low profile surface mounted applica
2sa1201.pdf
SMD Type TransistorsPNP Transistors2SA12011.70 0.1 Features High voltage High transition frequency Complementary to 2SC28810.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N4114
History: 2N4114
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050