2SA1201Y Datasheet. Equivalente

 ..1. Size:1583K  cn shikues
 2sa1201o 2sa1201y.pdf

 7.1. Size:151K  toshiba
 2sa1201.pdf

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = -120 V High transition frequency f = 120 MHz (typ.) T Small flat package P C = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25 C) Characteri

 7.2. Size:386K  mcc
 2sa1201-o.pdf

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

 7.3. Size:386K  mcc
 2sa1201-y.pdf

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

 7.4. Size:81K  utc
 2sa1201.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage VCEO= -120V *High transition frequency fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb

 7.5. Size:228K  secos
 2sa1201.pdf

2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF.

 7.6. Size:880K  jiangsu
 2sa1201.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1201 TRANSISTOR (PNP) 1. BASE FEATURES High voltage 2. COLLECTOR High transition frequency Complementary to 2SC2881 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -120 Collector-Base Voltage V VCEO -120

 7.7. Size:276K  htsemi
 2sa1201.pdf

2SA1 201 SOT-89 TRANSISTOR(PNP) 1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Co

 7.8. Size:217K  lge
 2sa1201 sot-89.pdf

2SA1201 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 High voltage MIN 0.53 High transition frequency 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SC2881 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol P

 7.9. Size:345K  willas
 2sa1201.pdf

FM120-M WILLAS THRU 2SA1201 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rever SOD-123H TRANSISTOR se leakage current and thermal resistance. (PNP) Low profile surface mounted applica

 7.10. Size:646K  kexin
 2sa1201.pdf

SMD Type Transistors PNP Transistors 2SA1201 1.70 0.1 Features High voltage High transition frequency Complementary to 2SC2881 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect