Биполярный транзистор BFG520-XR - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFG520-XR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2.5 V
Макcимальный постоянный ток коллектора (Ic): 0.07 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 9000(typ) MHz
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT143B
Аналоги (замена) для BFG520-XR
BFG520-XR Datasheet (PDF)
bfg520 bfg520x bfg520xr cnv 3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DISCRETE SEMICONDUCTORSDATA SHEETBFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XRFEATURES PINNING43fpage High power gainPIN DESCRIPTION Low noise figureBFG520 (Fig.1) Code: N36
bfg520w x n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BFG520W; BFG520W/XNPN 9 GHz wideband transistorsRev. 04 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links ass
bfg520xr n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
bfg520w bfg520wx 3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D123BFG520W; BFG520W/XNPN 9 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG520W; BFG520W/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG250W BFG250W/X High transition
bfg520xr.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
bfg520x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG520/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear b
bfg520.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN RF Transistor BFG520DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSO
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .