BFG520-XR Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG520-XR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9000(typ) MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT143B
BFG520-XR Transistor Equivalent Substitute - Cross-Reference Search
BFG520-XR Datasheet (PDF)
bfg520 bfg520x bfg520xr cnv 3.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XRFEATURES PINNING43fpage High power gainPIN DESCRIPTION Low noise figureBFG520 (Fig.1) Code: N36
bfg520w x n.pdf
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BFG520W; BFG520W/XNPN 9 GHz wideband transistorsRev. 04 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links ass
bfg520xr n.pdf
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BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
bfg520w bfg520wx 3.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D123BFG520W; BFG520W/XNPN 9 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG520W; BFG520W/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG250W BFG250W/X High transition
bfg520xr.pdf
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BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
bfg520x.pdf
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INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG520/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear b
bfg520.pdf
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isc Silicon NPN RF Transistor BFG520DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSO
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .