BFG520-XR Datasheet and Replacement

BFG520 1. Top view 4 3 VHFUHF CATV WMFCATV

DISCRETE SEMICONDUCTORSDATA SHEETBFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XRFEATURES PINNING43fpage High power gainPIN DESCRIPTION Low noise figureBFG520 (Fig.1) Code: N36

BFG520W; BFG520W/XNPN 9 GHz wideband transistorsRev. 04 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links ass

BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D123BFG520W; BFG520W/XNPN 9 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG520W; BFG520W/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG250W BFG250W/X High transition

BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin

INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG520/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear b

isc Silicon NPN RF Transistor BFG520DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSO