All Transistors. BFG520-XR Datasheet

 

BFG520-XR Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFG520-XR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9000(typ) MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT143B

 BFG520-XR Transistor Equivalent Substitute - Cross-Reference Search

   

BFG520-XR Datasheet (PDF)

 ..1. Size:796K  slkor
bfg520-x bfg520-xr.pdf

BFG520-XR
BFG520-XR

BFG520 1. Top view 4 3 VHFUHF CATV WMFCATV

 8.1. Size:117K  philips
bfg520 bfg520x bfg520xr cnv 3.pdf

BFG520-XR
BFG520-XR

DISCRETE SEMICONDUCTORSDATA SHEETBFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XRFEATURES PINNING43fpage High power gainPIN DESCRIPTION Low noise figureBFG520 (Fig.1) Code: N36

 8.2. Size:305K  philips
bfg520w x n.pdf

BFG520-XR
BFG520-XR

BFG520W; BFG520W/XNPN 9 GHz wideband transistorsRev. 04 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links ass

 8.3. Size:316K  philips
bfg520xr n.pdf

BFG520-XR
BFG520-XR

BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin

 8.4. Size:124K  philips
bfg520w bfg520wx 3.pdf

BFG520-XR
BFG520-XR

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D123BFG520W; BFG520W/XNPN 9 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG520W; BFG520W/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG250W BFG250W/X High transition

 8.5. Size:316K  nxp
bfg520xr.pdf

BFG520-XR
BFG520-XR

BFG520; BFG520/X; BFG520/XRNPN 9 GHz wideband transistorRev. 04 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin

 8.6. Size:209K  inchange semiconductor
bfg520x.pdf

BFG520-XR
BFG520-XR

INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG520/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear b

 8.7. Size:238K  inchange semiconductor
bfg520.pdf

BFG520-XR
BFG520-XR

isc Silicon NPN RF Transistor BFG520DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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