BFG520-XR Datasheet. Specs and Replacement
Type Designator: BFG520-XR 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 9000 typ MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT143B
BFG520-XR Substitution
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BFG520-XR datasheet
bfg520 bfg520x bfg520xr cnv 3.pdf ![]()
DISCRETE SEMICONDUCTORS DATA SHEET BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR FEATURES PINNING 43 fpage High power gain PIN DESCRIPTION Low noise figure BFG520 (Fig.1) Code N36... See More ⇒
BFG520W; BFG520W/X NPN 9 GHz wideband transistors Rev. 04 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as s... See More ⇒
BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin... See More ⇒
Detailed specifications: 850CT, 857AW, 857BW, 858AW, 858BW, BCP68-16, BFG425W-TOB, BFG520-X, 2SC2655, CZT5551A, CZT5551C, CZT5551N, D882Q, MBT3946, MJD122D, MJD127D, MMBTA56G
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