BFG520-XR Datasheet and Replacement

DISCRETE SEMICONDUCTORS DATA SHEET BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR FEATURES PINNING 43 fpage High power gain PIN DESCRIPTION Low noise figure BFG520 (Fig.1) Code N36

BFG520W; BFG520W/X NPN 9 GHz wideband transistors Rev. 04 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as s

BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG520W; BFG520W/X NPN 9 GHz wideband transistors 1998 Oct 02 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG250W BFG250W/X High transition

BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin

INCHANGE Semiconductor isc Silicon NPN RF Transistor BFG520/X DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz 21 CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear b

isc Silicon NPN RF Transistor BFG520 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz 21 CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSO