PBSS304 - Даташиты. Аналоги. Основные параметры

PBSS304 SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS304NZ 60 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 01 18 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NX. 1.2 Features Low collector-emitter saturation voltage VCEsat

PBSS304PX 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR SOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)