Биполярный транзистор PBSS304 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS304
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130(typ) MHz
Ёмкость коллекторного перехода (Cc): 31 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT89
PBSS304 Datasheet (PDF)
pbss304.pdf
PBSS304SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)
pbss304pd.pdf
PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current
pbss304nd.pdf
PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
pbss304pd.pdf
PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current
pbss304nx.pdf
PBSS304NX60 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PX.1.2 Features Low collector-emitter saturation voltage VCEsa
pbss304nz.pdf
PBSS304NZ60 V, 5.2 A NPN low VCEsat (BISS) transistorRev. 01 18 September 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
pbss304pz.pdf
PBSS304PZ60 V, 4.5 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
pbss304nd.pdf
PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
pbss304px.pdf
PBSS304PX60 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NX.1.2 Features Low collector-emitter saturation voltage VCEsat
pbss304px.pdf
PBSS304PX60V PNP LOW SATURATION MEDIUM POWER TRANSISTORSOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
