PBSS304 datasheet и подбор замены

 ..1. Size:496K  slkor
 pbss304.pdf 

PBSS304 SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)

 0.1. Size:129K  philips
 pbss304pd.pdf 

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 0.2. Size:158K  philips
 pbss304nd.pdf 

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 0.3. Size:122K  nxp
 pbss304pd.pdf 

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 0.4. Size:199K  nxp
 pbss304nx.pdf 

PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

 0.5. Size:119K  nxp
 pbss304nz.pdf 

PBSS304NZ 60 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 01 18 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 0.6. Size:173K  nxp
 pbss304pz.pdf 

PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 0.7. Size:158K  nxp
 pbss304nd.pdf 

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 0.8. Size:198K  nxp
 pbss304px.pdf 

PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NX. 1.2 Features Low collector-emitter saturation voltage VCEsat

 0.9. Size:1225K  slkor
 pbss304px.pdf 

PBSS304PX 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR SOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)