All Transistors. PBSS304 Datasheet

 

PBSS304 Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS304
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130(typ) MHz
   Collector Capacitance (Cc): 31 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89

 PBSS304 Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS304 Datasheet (PDF)

 ..1. Size:496K  slkor
pbss304.pdf

PBSS304
PBSS304

PBSS304SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)

 0.1. Size:129K  philips
pbss304pd.pdf

PBSS304
PBSS304

PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 0.2. Size:158K  philips
pbss304nd.pdf

PBSS304
PBSS304

PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 0.3. Size:122K  nxp
pbss304pd.pdf

PBSS304
PBSS304

PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 0.4. Size:199K  nxp
pbss304nx.pdf

PBSS304
PBSS304

PBSS304NX60 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PX.1.2 Features Low collector-emitter saturation voltage VCEsa

 0.5. Size:119K  nxp
pbss304nz.pdf

PBSS304
PBSS304

PBSS304NZ60 V, 5.2 A NPN low VCEsat (BISS) transistorRev. 01 18 September 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 0.6. Size:173K  nxp
pbss304pz.pdf

PBSS304
PBSS304

PBSS304PZ60 V, 4.5 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 0.7. Size:158K  nxp
pbss304nd.pdf

PBSS304
PBSS304

PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 0.8. Size:198K  nxp
pbss304px.pdf

PBSS304
PBSS304

PBSS304PX60 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NX.1.2 Features Low collector-emitter saturation voltage VCEsat

 0.9. Size:1225K  slkor
pbss304px.pdf

PBSS304
PBSS304

PBSS304PX60V PNP LOW SATURATION MEDIUM POWER TRANSISTORSOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBR951LT1 | BD545C

 

 
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