2SA126. Аналоги и основные параметры
Наименование производителя: 2SA126
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO18
Аналоги (замена) для 2SA126
- подборⓘ биполярного транзистора по параметрам
2SA126 даташит
0.1. Size:94K toshiba
2sa1263.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.2. Size:94K toshiba
2sa1265.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.3. Size:95K toshiba
2sa1264.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.5. Size:160K jmnic
2sa1261.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220) and symbol 3 Base Absolu
0.6. Size:183K jmnic
2sa1262.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
0.7. Size:198K jmnic
2sa1263n.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S
0.8. Size:201K jmnic
2sa1265n.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY
0.9. Size:198K jmnic
2sa1264n.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S
0.12. Size:195K cn sptech
2sa1264r 2sa1264o.pdf 
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
0.13. Size:195K cn sptech
2sa1261m 2sa1261l 2sa1261k.pdf 
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency p
0.14. Size:195K cn sptech
2sa1265r 2sa1265o.pdf 
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
0.15. Size:219K inchange semiconductor
2sa1261.pdf 
isc Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switchin
0.16. Size:214K inchange semiconductor
2sa1262.pdf 
isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -0.6V(Max.)@I = -2A CE(sat) C Complement to Type 2SC3179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIM
0.17. Size:186K inchange semiconductor
2sa1261-z.pdf 
isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION High switching speed Low Collector-Emitter Saturation Voltage- VCE(sat)= -0.6V(Max)@ IC= -5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC3157 APPLICATIONS High speed high voltage switching industrial use DC/DC converters ABSOLUTE MAX
0.18. Size:221K inchange semiconductor
2sa1263.pdf 
isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app
0.19. Size:222K inchange semiconductor
2sa1263n.pdf 
isc Silicon PNP Power Transistor 2SA1263N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage a
0.20. Size:220K inchange semiconductor
2sa1265.pdf 
isc Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app
0.21. Size:220K inchange semiconductor
2sa1264.pdf 
isc Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app
0.22. Size:222K inchange semiconductor
2sa1265n.pdf 
isc Silicon PNP Power Transistor 2SA1265N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage a
0.23. Size:222K inchange semiconductor
2sa1264n.pdf 
isc Silicon PNP Power Transistor 2SA1264N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage a
Другие транзисторы: 2SA1256E4, 2SA1256E5, 2SA1257, 2SA1257G3, 2SA1257G4, 2SA1257G5, 2SA1258, 2SA1259, C3198, 2SA1260, 2SA1261, 2SA1262, 2SA1263, 2SA1263N, 2SA1263NO, 2SA1263NR, 2SA1264
