2SA126 Specs and Replacement
Type Designator: 2SA126
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO18
- BJT ⓘ Cross-Reference Search
2SA126 datasheet
0.1. Size:94K toshiba
2sa1263.pdf 
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0.2. Size:94K toshiba
2sa1265.pdf
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0.3. Size:95K toshiba
2sa1264.pdf
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0.5. Size:160K jmnic
2sa1261.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220) and symbol 3 Base Absolu... See More ⇒
0.6. Size:183K jmnic
2sa1262.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
0.7. Size:198K jmnic
2sa1263n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S... See More ⇒
0.8. Size:201K jmnic
2sa1265n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY... See More ⇒
0.9. Size:198K jmnic
2sa1264n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S... See More ⇒
0.12. Size:195K cn sptech
2sa1264r 2sa1264o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
0.13. Size:195K cn sptech
2sa1261m 2sa1261l 2sa1261k.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency p... See More ⇒
0.14. Size:195K cn sptech
2sa1265r 2sa1265o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
0.15. Size:219K inchange semiconductor
2sa1261.pdf
isc Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switchin... See More ⇒
0.16. Size:214K inchange semiconductor
2sa1262.pdf
isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -0.6V(Max.)@I = -2A CE(sat) C Complement to Type 2SC3179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIM... See More ⇒
0.17. Size:186K inchange semiconductor
2sa1261-z.pdf
isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION High switching speed Low Collector-Emitter Saturation Voltage- VCE(sat)= -0.6V(Max)@ IC= -5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC3157 APPLICATIONS High speed high voltage switching industrial use DC/DC converters ABSOLUTE MAX... See More ⇒
0.18. Size:221K inchange semiconductor
2sa1263.pdf
isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app... See More ⇒
0.19. Size:222K inchange semiconductor
2sa1263n.pdf
isc Silicon PNP Power Transistor 2SA1263N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage a... See More ⇒
0.20. Size:220K inchange semiconductor
2sa1265.pdf
isc Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app... See More ⇒
0.21. Size:220K inchange semiconductor
2sa1264.pdf
isc Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app... See More ⇒
0.22. Size:222K inchange semiconductor
2sa1265n.pdf
isc Silicon PNP Power Transistor 2SA1265N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage a... See More ⇒
0.23. Size:222K inchange semiconductor
2sa1264n.pdf
isc Silicon PNP Power Transistor 2SA1264N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage a... See More ⇒
Detailed specifications: 2SA1256E4, 2SA1256E5, 2SA1257, 2SA1257G3, 2SA1257G4, 2SA1257G5, 2SA1258, 2SA1259, C3198, 2SA1260, 2SA1261, 2SA1262, 2SA1263, 2SA1263N, 2SA1263NO, 2SA1263NR, 2SA1264
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