BU508AT4TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Collector-Emitter Vo

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR POWER TRANSISTOR BU508ATTO-220Plastic PackageHigh Voltage, High-Speed Switching TransistorIntended for use in Horizontal Deflection Circuits of Colour TelevisionsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCES 1500 VVCEO Collector

isc Silicon NPN Power Transistor BU508ATDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 100W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflectioncircuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 1500

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

BU208A/508A/508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology for c

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

BU508AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tight hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pa

BU208ABU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology f

BU508AWHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement3 Tight hFE range at operating collector current21 High ruggedness TO-247 semi-insulated power packageT

BU508AF TV Horizontal Output ApplicationsTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE2. COLLECTOR3. EMITTERDESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers.1 2 3Features * TV color horizontal deflection. * With TO-3P

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508ATO- 3PN Non IsolatedPlastic PackageColor TV Horizontal Output Application (No Damper Diode)ABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise )DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 1500 VCollector -Emitter V

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 V

isc Silicon NPN Power Transistor BU508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Power Dissipation- : PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

isc Silicon NPN Power Transistor BU508AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL