BU508AT4TL Specs and Replacement
Type Designator: BU508AT4TL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 7 typ MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO3PN
- BJT ⓘ Cross-Reference Search
BU508AT4TL datasheet
..1. Size:1298K cn sps
bu508at4tl.pdf 
BU508AT4TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Collector-Emitter Vo... See More ⇒
7.1. Size:118K cdil
bu508at.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCES 1500 V VCEO Collector... See More ⇒
7.2. Size:211K inchange semiconductor
bu508at.pdf
isc Silicon NPN Power Transistor BU508AT DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 100W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.1. Size:48K philips
bu508af 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB... See More ⇒
8.2. Size:50K philips
bu508ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB... See More ⇒
8.3. Size:61K philips
bu508aw.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500... See More ⇒
8.4. Size:245K st
bu208a bu508a bu508afi.pdf
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo... See More ⇒
8.5. Size:91K st
bu508a.pdf
BU208A/508A/508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology for c... See More ⇒
8.6. Size:236K st
bu208a bu508a.pdf
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo... See More ⇒
8.7. Size:211K st
bu508af.pdf
BU508AF High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 2 Tight hFE range at operating collector current 1 High ruggedness ISOWATT218FX Fully insulated power pa... See More ⇒
8.8. Size:75K st
bu208a bu508a .pdf
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology f... See More ⇒
8.9. Size:211K st
bu508aw.pdf
BU508AW High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 Tight hFE range at operating collector current 2 1 High ruggedness TO-247 semi-insulated power package T... See More ⇒
8.10. Size:47K fairchild semi
bu508af.pdf
BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1... See More ⇒
8.11. Size:78K utc
bu508afi.pdf
UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE 2. COLLECTOR 3. EMITTER DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 Features * TV color horizontal deflection. * With TO-3P... See More ⇒
8.12. Size:264K cdil
bu508a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application (No Damper Diode) ABSOLUTE MAXIMUM RATINGS (Ta=25 C Unless Specified Otherwise ) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 1500 V Collector -Emitter V... See More ⇒
8.13. Size:426K cn sptech
bu508a.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU508A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V... See More ⇒
8.15. Size:216K inchange semiconductor
bu508ax.pdf
isc Silicon NPN Power Transistor BU508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
8.16. Size:87K inchange semiconductor
bu508a-m.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V (Min) High Power Dissipation- PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) ... See More ⇒
8.17. Size:134K inchange semiconductor
bu508af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
8.18. Size:214K inchange semiconductor
bu508afi.pdf
isc Silicon NPN Power Transistor BU508AFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.19. Size:214K inchange semiconductor
bu508aw.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor BU508AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
Detailed specifications: 2SC4237T8TL, 2SC4552T2TL, 2SC5027T1TL, 2SC5198T7TL, 2SC5200T7TL, 2SC5570T7TL, BU406DT9TL, BU406T1TL, 2N2222A, BU941PT4TL, BU941TT1TL, FJL6920T7TL, MJW0281AT4TL, MJW0302AT4TL, MJW3281AT4TL, NJW0281GT4TL, NJW0302GT4TL
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