Биполярный транзистор TIP36CT4TL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP36CT4TL
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 25 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3PN
Аналоги (замена) для TIP36CT4TL
TIP36CT4TL Datasheet (PDF)
tip36ct4tl.pdf
TIP36CT4TLSilicon PNP Power TransistorDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (
tip35cp tip36cp.pdf
TIP35CPTIP36CPComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN-PNP transistorsApplications General purpose3 Audio amplifier 21TO-3PDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excepti
tip35c tip36c tip36b.pdf
TIP35CTIP36B/TIP36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS STMicroelectronic PREFERREDSALESTYPESDESCRIPTION The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.3The complementary PNP type is TIP36C.2Also TIP36B is a PNP type. 1TO-218INTERNAL SCHEMATIC DI
tip35cw tip36cw.pdf
TIP35CWTIP36CWComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show exc
tip35c tip36c.pdf
TIP35CTIP36CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excep
tip35a tip35b tip35c tip36a tip36b tip36c.pdf
TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain
tip36c.pdf
UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM C (2)(1)BE (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea
tip36c.pdf
SEMICONDUCTOR TIP36CTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURESRecommended for 75W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to TIP35C.A 15.9 MAXB 4.8 MAXIcmax:-25A. _C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdH 9.0MAXIMUM RATING (Ta=25 )I 4.5P PT J 2.0
tip36ca.pdf
SEMICONDUCTOR TIP36CATECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURESO KRecommended for 75W Audio Frequency DIM MILLIMETERSAmplifier Output Stage. _A +15.60 0.20_B4.80 + 0.20Complementary to TIP35CA._C 19.90 + 0.20_D 2.00 0.20+Icmax:-25A. _d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50
tip36c.pdf
PNP PNP Epitaxial Silicon Transistor RTIP36C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltageV =100V (min) CEO CEO Low collector-emitter saturation voltage TIP35C Complementa
tip36c.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor TIP36CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicati
tip36 tip36a tip36b tip36c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
tip36cf.pdf
isc Silicon PNP Power Transistor TIP36CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
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