TIP36CT4TL Specs and Replacement

Type Designator: TIP36CT4TL

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3PN

 TIP36CT4TL Substitution

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TIP36CT4TL datasheet

 ..1. Size:1295K  cn sps

tip36ct4tl.pdf pdf_icon

TIP36CT4TL

TIP36CT4TL Silicon PNP Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (... See More ⇒

 8.1. Size:192K  st

tip35cp tip36cp.pdf pdf_icon

TIP36CT4TL

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti... See More ⇒

 8.2. Size:43K  st

tip35c tip36c tip36b.pdf pdf_icon

TIP36CT4TL

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI... See More ⇒

 8.3. Size:190K  st

tip35cw tip36cw.pdf pdf_icon

TIP36CT4TL

TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc... See More ⇒

Detailed specifications: MJW0281AT4TL, MJW0302AT4TL, MJW3281AT4TL, NJW0281GT4TL, NJW0302GT4TL, NJW1302GT4TL, NJW3281GT4TL, TIP35CT4TL, BD335, CD568B, ISCE1938P, ISCN440P, ISCND436D, 2SC2222H, BC807-16W-AU, BC807-25W-AU, BC807-40W-AU

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