2SC4213-B - описание и поиск аналогов

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse hFE Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance RON = 1 (typ.) (IB = 5 mA) High DC current gain hFE = 200 to 1200 Small package Absolute Maximum

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit mm Low noise figure NF = 2.8dB (typ.) High power gain V = 4.5 V G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage V

2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit mm High DC current gain hFE = 100 320 Complementary to 2SA1621 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector curre

Ordering number EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability unit mm (VCEO 400V). 2049C Fast switching speed (tf=0.1 s typ). [2SC4219] Wide ASO. 10.2 4.5 1.3 Adoption of MBIT process. Suitable for sets whose height is restricted.

Ordering number EN2968 NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Micaless package facilitating easy mounting. 2042A [2SC4217] B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C

MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4215-Y Fax (818) 701-4939 Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low V oise figure NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4215-Y Fax (818) 701-4939 Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low V oise figure NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4215-Y Fax (818) 701-4939 Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low V oise figure NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

Power Transistors 2SC4212 2SC4212 2SC4212 2SC4212 2SC4212 Silicon NPN triple diffusion planar type Unit mm For color TV horizontal deflection driver 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter S

2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Small reverse transfer capacitance Cre = 0.55pF (typ.). A Low noise figure NF=2dB (typ.) (f=100 MHz) L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4215-R 2SC42

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4215 TRANSISTOR (NPN) FEATURES 1. BASE Small reverse transfer capacitance Cre= 0.55pF(typ.) 2. EMITTER Low noise figure NF=2dB (typ.) (f=100 MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance Cre= 0.55pF(typ.) Low noise figure NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Curre

2SC4215 SOT-323 Transistor(NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low noise figure NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO

2SC4215 NPN Silicon Transistor P b Lead(Pb)-Free 3 1 2 1. BASE 2. EMITTER FEATURES 3. COLLECTOR SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit mm A SOT-323 Dim Min Max A 0.30 0.40 B C TOP VIEW B 1.15 1.35 C 2.00 2.40 D - 0.65 D E 0.30 0.40 G E G 1.20 1.40 H H 1.80 2.20 J 0.00 0.10 K K 0.80 1.00 L 0.42 0.53 L M 0.10 0.25 J M WEITRON 1/4 2

SMD Type Transistors NPN Transistors 2SC4210 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SA1621 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -