2SC4213-B Datasheet and Replacement

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance: RON = 1 (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 2.8dB (typ.) High power gain V = 4.5 V: G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage V

2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit: mm High DC current gain: hFE = 100~320 Complementary to 2SA1621 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector curre

Ordering number:EN2709NPN Triple Diffused Planar Silicon Transistor2SC4219400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliabilityunit:mm(VCEO 400V).2049C Fast switching speed (tf=0.1 s typ).[2SC4219] Wide ASO.10.24.51.3 Adoption of MBIT process. Suitable for sets whose height is restricted.

Ordering number:EN2968NPN Triple Diffused Planar Silicon Transistor2SC4217Color TV Chroma Output andAudio Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Micaless package facilitating easy mounting.2042A[2SC4217]B : BaseC : CollectorE : EmitterSANYO : TO-126MLSpecificationsAbsolute Maximum Ratings at Ta = 25C

MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

Power Transistors2SC42122SC42122SC42122SC42122SC4212Silicon NPN triple diffusion planar typeUnit: mmFor color TV horizontal deflection driver8.0+0.50.13.20.2 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter S

2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Small reverse transfer capacitanceCre = 0.55pF (typ.). A Low noise figureNF=2dB (typ.) (f=100 MHz) L3 3Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank 2SC4215-R 2SC42

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4215 TRANSISTOR (NPN) FEATURES 1. BASE Small reverse transfer capacitance: Cre= 0.55pF(typ.) 2. EMITTER Low noise figure: NF=2dB (typ.) (f=100 MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 VIC Collector Curre

2SC4215 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO

2SC4215NPN Silicon TransistorP b Lead(Pb)-Free3121. BASE2. EMITTERFEATURES:3. COLLECTORSOT-323(SC-70)* Power dissipationSOT-323 Outline Demensions Unit:mmASOT-323Dim Min MaxA 0.30 0.40B CTOP VIEWB 1.15 1.35C 2.00 2.40D - 0.65DE 0.30 0.40GEG 1.20 1.40HH 1.80 2.20J 0.00 0.10KK 0.80 1.00L 0.42 0.53LM 0.10 0.25J MWEITRON1/4 2

SMD Type TransistorsNPN Transistors2SC4210SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SA16211.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -