Биполярный транзистор 2SA1015O - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1015O
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 7(max) pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO92
2SA1015O Datasheet (PDF)
2sa1015o 2sa1015y 2sa1015g 2sa1015l.pdf
2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit
2sa1015o 2sa1015y 2sa1015g.pdf
2SA10152 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity1BASE Complementary to C18152EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA
2sa1015.pdf
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95
2sa1015l.pdf
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)
2sa1015-gr.pdf
2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -
2sa1015-y.pdf
2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -
2sa1015-o.pdf
2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -
2sa1015.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO1* Collector Current up to 150mA * High h Linearity FETO-92* Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-
2sa1015k.pdf
2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040 FEATURES B 1.200 1.400. Power Dissipation C 0.890 1.110PCM: 0.2 W ( Ta = 25 ) AD 0.370 0.500. Collector Current LG 1.780 2.040ICM: -0.15 A 33 H 0.013 0.100. Collector-Base Volt
2sa1015.pdf
TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1
2sa1015.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Ba
2sa1015.pdf
2SA1015 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SC1815 FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815. / Applications
2sa1015m.pdf
2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, h ,, 2SC1815M FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati
2sa1015lt1.pdf
SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V
2sa1015.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1015SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.)1 2+0.050.95+0.1-0.1 0.1 -0.01Low niose: NF=1dB(Typ.) at f=1KHz1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VC
2sa1015l 2sa1015h.pdf
RUMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)2SA1015MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emit
2sa1015-ms.pdf
www.msksemi.com2SA1015-MSSemiconductor CompianceSemiconductor Compiance TRANSI STOR ( PNP)FEATURES High voltage and high current Excellent hFE Linearity1. BASE Complementary to C1815-MS2. EMITTERSOT23 3. COLLECTORMARKING: BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emi
2sa1015-l 2sa1015-h.pdf
2SC1015PNP Transistors321.BaseFeatures 2.Emitter1 3.CollectorHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23)Low niose: NF=1dB(Typ.) at f=1KHzAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Con
2sa1015.pdf
2SA1015BIPOLAR TRANSISTOR (PNP)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SC1815SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no
2sa1015.pdf
`isc Silicon PNP Transistor 2SA1015DESCRIPTIONHigh Voltage and High CurrentVceo=-50V(Min.Ic=-150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SC1815Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOL
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050