2SA1015O Datasheet and Replacement

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

2SA1015 2 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity 1 BASE Complementary to C1815 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit mm Driver Stage Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit mm Low Noise Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BV =-50V CEO 1 * Collector Current up to 150mA * High h Linearity FE TO-92 * Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM -0.15 A 3 3 H 0.013 0.100 . Collector-Base Volt

TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba

2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , h , , 2SC1815M FE High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SC1815 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN 1 2 3 Emitter-Base Voltage Vebo -5 V

SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC

R UMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) 2SA1015 MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emit

www.msksemi.com 2SA1015-MS Semiconductor Compiance Semiconductor Compiance TRANSI STOR ( PNP) FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Complementary to C1815-MS 2. EMITTER SOT 23 3. COLLECTOR MARKING BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emi

2SC1015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23) Low niose NF=1dB(Typ.) at f=1KHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Con

2SA1015 BIPOLAR TRANSISTOR (PNP) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SC1815 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no

isc Silicon PNP Transistor 2SA1015 DESCRIPTION High Voltage and High Current Vceo=-50V(Min. Ic=-150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SC1815 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOL