Справочник транзисторов. MMBTSC3356R

 

Биполярный транзистор MMBTSC3356R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBTSC3356R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 7000 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT23

 Аналоги (замена) для MMBTSC3356R

 

 

MMBTSC3356R Datasheet (PDF)

 ..1. Size:207K  semtech
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

 4.1. Size:203K  cn cbi
mmbtsc3356.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

 7.1. Size:508K  pjsemi
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

 8.1. Size:282K  semtech
mmbtsc4098w.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 8.2. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.3. Size:206K  semtech
mmbtsc1623o mmbtsc1623y mmbtsc1623g mmbtsc1623l.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 V

 8.4. Size:130K  semtech
mmbtsc945r mmbtsc945o mmbtsc945y mmbtsc945p mmbtsc945l.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.5. Size:731K  pjsemi
mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage1.Base 2.Emitter 3.CollectorMarking Code: L4: L4. L5: L5. L6: L6. L7: L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base V

 8.6. Size:710K  pjsemi
mmbtsc945-l mmbtsc945-h.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Curr

 8.7. Size:544K  cn cbi
mmbtsc2412.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC2412 TRANSISTOR (NPN) FEATURES SOT-23 Low Cob ,Cob = 2.0 pF (Typ). 1BASE 2EMITTER 3COLLECTOR MARKING : BR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipa

 8.8. Size:1050K  cn cbi
mmbtsc4081w.pdf

MMBTSC3356R
MMBTSC3356R

NPN Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 7 VCollector Current IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperature Tj

 8.9. Size:554K  cn cbi
mmbtsc2712.pdf

MMBTSC3356R
MMBTSC3356R

MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current: VCEO=50V, IC=150mA(max)1.Base 2.Emitter 3.Collector High hFE: hFE=70~700SOT-23 Plastic Package Low noise: NF=1dB(typ.), 10dB

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