Биполярный транзистор MRF847 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF847
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 38 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 16.5 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 870 MHz
Ёмкость коллекторного перехода (Cc): 75 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: CASE319-07
MRF847 Datasheet (PDF)
mrf847.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF847/DThe RF LineNPN SiliconMRF847RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics45 W, 870 MHzOutput Power = 45 WattsRF P
mrf847re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF847/DThe RF LineNPN SiliconMRF847RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics45 W, 870 MHzOutput Power = 45 WattsRF P
mrf842.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF842/DThe RF LineNPN SiliconMRF842RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics20 W, 870 MHzOutput Power = 20 WattsRF P
mrf844.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF844/DThe RF LineNPN SiliconMRF844RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics30 W, 870 MHzOutput Power = 30 WattsRF P
mrf844re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF844/DThe RF LineNPN SiliconMRF844RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics30 W, 870 MHzOutput Power = 30 WattsRF P
mrf840.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF840/DThe RF LineNPN SiliconMRF840RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics10 W, 870 MHzOutput Power = 10 WattsRF P
mrf840re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF840/DThe RF LineNPN SiliconMRF840RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics10 W, 870 MHzOutput Power = 10 WattsRF P
mrf842re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF842/DThe RF LineNPN SiliconMRF842RF Power Transistor. . . designed for 12.5 volt UHF largesignal, commonbase amplifier applica-tions in industrial and commercial FM equipment operating in the range of806960 MHz. Specified 12.5 Volt, 870 MHz Characteristics20 W, 870 MHzOutput Power = 20 WattsRF P
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