Биполярный транзистор MRF861 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF861
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 130 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 28 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 3.75 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 960 MHz
Ёмкость коллекторного перехода (Cc): 45 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: CASE375A-01
MRF861 Datasheet (PDF)
mrf861.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF861/DThe RF LineNPN SiliconMRF861RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 3.75 Adc Characteristics27
mrf861re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF861/DThe RF LineNPN SiliconMRF861RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 3.75 Adc Characteristics27
mrf860re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF860/DThe RF LineNPN SiliconMRF860RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 1.9 Adc Characteristics13.7
mrf862 .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF862/DThe RF LineNPN SiliconMRF862RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz. CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 5 Adc Characteristics36 W (C
mrf860.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF860/DThe RF LineNPN SiliconMRF860RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 1.9 Adc Characteristics13.7
mrf862.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF862/DThe RF LineNPN SiliconMRF862RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz. CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 5 Adc Characteristics36 W (C
mrf862re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF862/DThe RF LineNPN SiliconMRF862RF Power TransistorMotorola Preferred DeviceDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz. CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 5 A
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
