L8550HQ - Аналоги. Основные параметры
Наименование производителя: L8550HQ
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: SOT23
Аналоги (замена) для L8550HQ
L8550HQ - технические параметры
l8550hq.pdf
L8550HQ General Purpose Transistors PNP Silicon FEATURE COLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V -25 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5 V Collecto
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir
l8550hqlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir
Другие транзисторы... 2SC3356-T93-R-K , 2SC4083PWT1G , 2SD1628-E , 2SD1628-F , 2SD1628-G , C945H , C945L , GT13003Y , A42 , MMBT2222A-H , MMBT2222A-L , MMBT2907A-H , MMBT2907A-L , MMBT3904-H , MMBT3904J , MMBT3904-L , MMBT3906-H .
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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