Биполярный транзистор 2SA1285 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1285
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 600
Корпус транзистора: TO92
2SA1285 Datasheet (PDF)
2sa1285.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1289.pdf
Ordering number:ENN1199DPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit).10.24.53.65.1 Power amp (high power car ste
2sa1286.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1282.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1287.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sa1280.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION With TO-220F package High breakdown voltage High power dissipation APPLICATIONS For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=
2sa1289.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1289 DESCRIPTION With TO-220 package Complement to type 2SC3253 Low saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collecto
2sa1288.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1288 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
2sa1283.pdf
isc Silicon PNP Transistor 2SA1283DESCRIPTIONHigh Voltage and High CurrentVceo=-60V(Min.Excellent hFE LinearityLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
2sa1280.pdf
isc Silicon PNP Power Transistor 2SA1280DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -15
2sa1289.pdf
isc Silicon PNP Power Transistor 2SA1289DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -2.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescen
2sa1288.pdf
isc Silicon PNP Power Transistor 2SA1288DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifiersSwitching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -
Другие транзисторы... 2SA1279 , 2SA128 , 2SA1280 , 2SA1281 , 2SA1282 , 2SA1282A , 2SA1283 , 2SA1284 , 2SC5200 , 2SA1285A , 2SA1286 , 2SA1287 , 2SA1288 , 2SA1289 , 2SA1289Q , 2SA1289R , 2SA1289S .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050