2SA1285 Specs and Replacement
Type Designator: 2SA1285
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 600
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SA1285 datasheet
..1. Size:162K isahaya
2sa1285.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.1. Size:40K sanyo
2sa1289.pdf 

Ordering number ENN1199D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010C Inverters, converters (strobo, flash, fluorescent lamp [2SA1289/2SC3253] lighting circuit). 10.2 4.5 3.6 5.1 Power amp (high power car ste... See More ⇒
8.2. Size:143K isahaya
2sa1286.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.4. Size:159K isahaya
2sa1282.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.5. Size:144K isahaya
2sa1287.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.6. Size:146K jmnic
2sa1280.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION With TO-220F package High breakdown voltage High power dissipation APPLICATIONS For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=... See More ⇒
8.7. Size:195K jmnic
2sa1289.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1289 DESCRIPTION With TO-220 package Complement to type 2SC3253 Low saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collecto... See More ⇒
8.8. Size:158K jmnic
2sa1288.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1288 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 ... See More ⇒
8.9. Size:166K inchange semiconductor
2sa1283.pdf 

isc Silicon PNP Transistor 2SA1283 DESCRIPTION High Voltage and High Current Vceo=-60V(Min. Excellent hFE Linearity Low Noise Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
8.10. Size:174K inchange semiconductor
2sa1280.pdf 

isc Silicon PNP Power Transistor 2SA1280 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -15... See More ⇒
8.11. Size:219K inchange semiconductor
2sa1289.pdf 

isc Silicon PNP Power Transistor 2SA1289 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -2.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescen... See More ⇒
8.12. Size:194K inchange semiconductor
2sa1288.pdf 

isc Silicon PNP Power Transistor 2SA1288 DESCRIPTION Low Collector Saturation Voltage Large Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifiers Switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -... See More ⇒
Detailed specifications: 2SA1279
, 2SA128
, 2SA1280
, 2SA1281
, 2SA1282
, 2SA1282A
, 2SA1283
, 2SA1284
, BD333
, 2SA1285A
, 2SA1286
, 2SA1287
, 2SA1288
, 2SA1289
, 2SA1289Q
, 2SA1289R
, 2SA1289S
.
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