SS8550L - описание и поиск аналогов

R UMW UMW SS8550 SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EB

SS8550 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter Collector Current IC=-1.5A 1 3.Collector Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1.5 A Collector Power Dissipation PC 0.3 W Junc

SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Diss

SS8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8050 ; Complementary to SS8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

SS8550 Features Complimentary to SS8050 Collector current IC= -1.5A SOT-23 A MARKING Y2 Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K K 0.903 1.10 J L 0.45 0.61 M 0.085 0.180 MAXIMUM RATINGS (Ta=25 unless othe

SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http //www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM 0.2 W (Tamb=25 ) Collector current ICM -1.5 A Collector-base voltage V(BR)CBO -25 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

March 2008 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation Features Complimentary to SS8050 Collector Current IC=1.5A Collector Power Dissipation PC=1W (TC=25 C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-

SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plastic-Encapsulate

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Tra

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plasti

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plasti

MCC SS8550-C TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components SS8550-D CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storage

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plasti

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Tra

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO-92-3 CASE 135AN SS8550 1 2 3 Features 2 W Output Amplifier of Portable Radios in Class B Push-Pull Operation Complementary to SS8050 TO-92-3 Collector Current IC = 1.5 A CASE 135AR 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 3 Compliant 1. Emitter 2. Base ABSOLUTE MAXIMUM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM 1 W Collector Current ICM -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg - 55 C + 150 C 1. EMITTER 2 2. BASS 3 . COL

SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM - 1.5 A D 0.370 0.500 Emitter G 1.780 2

SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO - 40 V S

www.jscj-elec.com AD-SS8550* series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-SS8550* series Plastic-Encapsulated Transistor AD-SS8550* series Transistor (PNP) FEATURES High Collector Current Complimentary to AD-SS8050 AEC-Q101 qualified Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-SS8550* series MAXIMUM RATINGS (T = 25 C unless otherwise speci

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT- 23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V

SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector P

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A

SS8550 Silicon Epitaxial Planar Transistor 1. BASE 2. EMITTER A SOT-23 3. COLLECTOR Dim Min Max A 2.70 3.10 E EATURES B 1.10 1.50 K B C 1.0 Typical Collector Current.(IC= 1.5A D 0.4 Typical E 0.35 0.48 J Complementary To SS8050. D G 1.80 2.00 G H 0.02 0.1 Collector Dissipation PC=0.3W (TC=25 C) J 0.1 Typical H K 2.20 2.60 C All Dimensions in mm APPLICA

SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC 1 W (TA=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curren

SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0

SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25 C) W 0.2 TJ Junction Temperature -55 to +150 Tstg Storage Temperature -55 to +15

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM 1 W (TA=25 ) 3. COLLECTOR 2 W (TC=25 ) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltag

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PC 1 W (TA=25 ) 1.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.BASE 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units 3.COLLECTOR VCBO -40 V VCBO VCBO Collector-Base Voltage VCBO ELECTRICAL ELECTRICAL ELECTRICAL EL

SS8550G Plastic-Encapsulate Transistors Simplified outline SS8550G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PC 1 W (Ta=25 ) 2.BASE 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Coll

Product specification PNP Silicon Epitaxial Planar Transistor SS8550 EATURES Pb Collector Current.(I = 1.5A C Lead-free Complementary To SS8050. Collector Dissipation P =0.3W (T =25 C) C C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8550 Y2 SOT-23 none is for Lead Free package;

SS8550 TRANSISTOR(PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipati

SS8550W PNP Transistors Features 3 High Collector Current Complementary to SS8050W 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power D

1.5A 1500 http //www.anbonsemi.com Document ID Issued Date Revised Date Revision Page. TEL 886-755-23776891 AS-3140127 2013/03/08 2016/05/16 D 4 FAX 886-755-81482182 http //www.anbonsemi.com Document ID Issued Date Revised Date Revision Page. TEL 886-755-23776891 AS-3140127 2013/03/08 2016/05/16 D 4 FAX 886-755-81482182 http //www.anbonsemi.com Document ID Issued Date Revised Dat

SS8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 High Collector Current Complementary to SS8050 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO 2. EMITTER -25 V V Collector-Emitter Voltage CEO 3. COLLECTOR V Emitter-Ba

FEATURES High Collector Current SOT-23 Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417

1.5A 1500 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4 SS8550 Y2 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4

SS8550 HD ST 0.52 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complimentary to SS8050 Collector Current IC=-1.5A Marking Y2 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -1.5 A P Collector Power Dissipation 3

SS8550 TO-92 Plastic-Encapsulate Transistors TRANSISTOR ( ) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit SS8550= Device code TO-92 Bulk 1000pcs/Bag S SS8550 Tape 2000pcs/Box Collector-Base Voltage -40 V Collector-Emitter Voltage -25 V Emitter-Base Voltage -5 V Collector Current -Continuous -1.5 A Collector Power Dissipation mW Thermal Resistance rom Junction o Ambi

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector P

www.msksemi.com SS8550-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary to SS8050-MS 1. BASE 2. EMITTER SOT 23 MARKING Y2 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO VCEO Collector-Emitter Voltage -25 V VEBO Emi

SS8550 PLASTIC-ENCAPSULATE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 Package C Solderability MIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE SS8550 - -T

SS8550 SS8550 SOT-23 PNP TRANSISTOR 3 FEATURES High Collector Current Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE 2.EMITTER Collector Base Voltage VCBO -40 V 3.COLLECTOR Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VEBO -5 V IC -1.5 A Collector Current Continuous Co

Jingdao Microelectronics co.LTD SS8550 SS8550 SOT-23 PNP TRANSISTOR 3 FEATURES High Collector Current Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE 2.EMITTER Collector Base Voltage VCBO -40 V 3.COLLECTOR Collector Emitter Voltage VCEO -25 V

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector

Integrated in OVP&OCP products SS8550 provider SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector

SS8550W SS8550W SS8550W SS8550W TRANSISTOR(PNP) SS8 550 W SOT 323 3 FEATURES Complimentary to SS8050W 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC

SS8550 SS8550 TRANSISTOR PNP FEATURES Complimentary to SS8050 SOT-23 1 BASE MARKING Y2 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation

RoHS COMPLIANT SS8550-L THRU SS8550-H PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking SS8550-L Y2 L SS8550-H Y2 Off Characteristics Item Symbol Unit Conditions Value Collector-Emitter Voltage VCEO V IC=-100uAdc, IB=

SS8550 SS8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking Y2 Maximum Ratings & Thermal Characteristics TA = 25 C unl

SOT-89Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Compliment to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1.5 A C P Collector Power Dissipation 0.5 W C Thermal Resist

TRANSISTOR PNP SS8550W SOT 323 FEATURES Complimentary to SS8050W 1. BASE 2. EMITTER 3. COLLECTOR MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD SS8550 FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8050 SS8050 (Ta=25 ) CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage VCB

SS8550 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-1.5A. ansition frequency fT>100MHz @ IC=- Tr 50mAdc, VCE=-10Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic Terminals Sold

SS8550 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to SS8050 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

SS8550 MOT PNP TRANSISTOR PNP PNP High Voltage Transistor SMD SS8550 PNP, BEC Transistor Polarity PNP General Purpose Transistors Transistor pinout BEC SOT-23 Package Marking Code Y2 hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching Inner circuit SS85

SS8550-Y2 Features SOT- 23 1.5A Mechanical Data 1500 www.shunyegroup.com.cn 1/4 S0S8550-Y2 www.shunyegroup.com.cn 2 4 SS8550-Y2 www.shunyegroup.com.cn 3 4 SS8550-Y2 MMBTSS8550 Y2 www.shunyegroup.com.cn 4 4

HMBT8550 PNP-TRANSISTOR PNP, 8550 PNP PNP Plastic-Encapsulate Transistors SMD HS8550, HS8550A HM8550, HMBT8550 High breakdown voltage Low collector-emitter saturation voltage HSS8550, HMA6801 Complementary to HMBT8050 Transistor Polarity PNP

Jiangsu Weida Semiconductor Co., Ltd. SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc VCBO Collector-Base Voltage -40 Vdc VEBO Emitter-Base Voltage -5.0 Vdc Collector Current Adc IC -1.5 Total De