2SA1432O. Аналоги и основные параметры
Наименование производителя: 2SA1432O
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TOSH2
Аналоги (замена) для 2SA1432O
- подборⓘ биполярного транзистора по параметрам
2SA1432O даташит
8.4. Size:29K sanyo
2sa1435.pdf 
Ordering number ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2003B [2SA1435] Features 5.0 4.0 4.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e
8.5. Size:75K sanyo
2sa1434.pdf 
Ordering number EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SA1434] Features Very small-sized package permitting 2SA1434-used sets to be made smaller, slimer. Adoption of FBET process.
8.6. Size:77K sanyo
2sa1437.pdf 
Ordering number EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003A Features [2SA1437] Very small-sized package permitting sets to be made smaller and slimer. Adoption of FBET process. High DC current gain (hFE=400 to 1000). Hig
8.7. Size:78K sanyo
2sa1433.pdf 
Ordering number EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions High fT (Gain-Bandwidth Product). unit mm Small reverse transfer capacitance (Cre=1.3pF). 2006A Adoption of FBET process. [2SA1433] EIAJ SC-51 B Base SANYO MP C Collector E Emitter Specifications Absolute Maximum Ratings
8.8. Size:29K sanyo
2sa1436.pdf 
Ordering number ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003B Features [2SA1436] Adoption of MBIT process. 5.0 4.0 4.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol
8.9. Size:732K kexin
2sa1434.pdf 
SMD Type or SMD Type TransistICs PNP Transistors 2SA1434 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). 1 2 Low collector-to-emitter saturation voltage +0.1 +0.05 0.95-0.1 0.1 -0.01 (VCE(sat) 0.5V). 1.9+0.1 -0.1 High VEBO (VEBO 15V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25
Другие транзисторы: 2SA1430, 2SA1430A, 2SA1430B, 2SA1430C, 2SA1431, 2SA1431O, 2SA1431Y, 2SA1432, 9014, 2SA1432R, 2SA1433, 2SA1434, 2SA1435, 2SA1436, 2SA1437, 2SA1438, 2SA144
