2SA1432O Specs and Replacement
Type Designator: 2SA1432O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TOSH2
- BJT ⓘ Cross-Reference Search
2SA1432O datasheet
8.4. Size:29K sanyo
2sa1435.pdf 
Ordering number ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2003B [2SA1435] Features 5.0 4.0 4.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e... See More ⇒
8.5. Size:75K sanyo
2sa1434.pdf
Ordering number EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SA1434] Features Very small-sized package permitting 2SA1434-used sets to be made smaller, slimer. Adoption of FBET process. ... See More ⇒
8.6. Size:77K sanyo
2sa1437.pdf
Ordering number EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003A Features [2SA1437] Very small-sized package permitting sets to be made smaller and slimer. Adoption of FBET process. High DC current gain (hFE=400 to 1000). Hig... See More ⇒
8.7. Size:78K sanyo
2sa1433.pdf
Ordering number EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions High fT (Gain-Bandwidth Product). unit mm Small reverse transfer capacitance (Cre=1.3pF). 2006A Adoption of FBET process. [2SA1433] EIAJ SC-51 B Base SANYO MP C Collector E Emitter Specifications Absolute Maximum Ratings ... See More ⇒
8.8. Size:29K sanyo
2sa1436.pdf
Ordering number ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003B Features [2SA1436] Adoption of MBIT process. 5.0 4.0 4.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol... See More ⇒
8.9. Size:732K kexin
2sa1434.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1434 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). 1 2 Low collector-to-emitter saturation voltage +0.1 +0.05 0.95-0.1 0.1 -0.01 (VCE(sat) 0.5V). 1.9+0.1 -0.1 High VEBO (VEBO 15V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 ... See More ⇒
Detailed specifications: 2SA1430, 2SA1430A, 2SA1430B, 2SA1430C, 2SA1431, 2SA1431O, 2SA1431Y, 2SA1432, 9014, 2SA1432R, 2SA1433, 2SA1434, 2SA1435, 2SA1436, 2SA1437, 2SA1438, 2SA144
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