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2SA1575E Datasheet (PDF)

3.1. 2sa1575 2sc4080.pdf Size:21K _sanyo

Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions · High fT. unit:mm · High breakdown voltage. 2038 · Small reverse transfer capacitance and excellent [2SA1575/2SC4080] high-frequency characteristic. · Adoption of FBET process. E : Emitter C : Collector

3.2. 2sa1575.pdf Size:321K _kexin

SMD Type Transistors PNP Transistors 2SA1575 1.70 0.1 ■ Features ● High fT. ● High breakdown voltage. ● Small reverse transfer capacitance and excellent 0.42 0.1 0.46 0.1 high-frequency characteristic. ● Complementary to 2SC4080 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200

 4.1. 2sa1572 2sc4067.pdf Size:49K _sanyo



4.2. 2sa1574 2sc4070.pdf Size:47K _sanyo



 4.3. 2sa1577fra.pdf Size:1065K _rohm

AEC-Q101 Qualified Medium Power Transistor (-32V, -05A) 2SA1577FRA Features Dimensions (Unit : mm) 1) Large IC. 2SA1577FRA 2SA1577 ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 2.0±0.2 3) Complements the 2SC4097. 2SC4097FRA 1.3±0.1 0.9±0.1 0.65 0.65 0.7±0.1 0.2 (1) (2) Structure 0∼0.1 Epitaxial planer type (3) PNP silicon transistor

4.4. 2sa1577.pdf Size:161K _rohm

Medium Power Transistor (-32V, -05A) 2SA1577 Features Dimensions (Unit : mm) 1) Large IC. 2SA1577 ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 2.0±0.2 3) Complements the 2SC4097. 1.3±0.1 0.9±0.1 0.65 0.65 0.7±0.1 0.2 (1) (2) Structure 0∼0.1 Epitaxial planer type (3) PNP silicon transistor 0.3+0.1 0.15±0.05 -0 All terminals have

 4.5. 2sa1579 2sa1514k 2sa1038s.pdf Size:75K _rohm

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-

4.6. 2sa1576ub.pdf Size:136K _rohm

General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications Dimensions (Unit : mm) General purpose small signal amplifier. UMT3F 2.0 0.9 0.32 Features (3) 1) Excellent hFE linearity. 2) Complements the 2SC4081UB. (1) (2) 0.65 0.65 0.13 1.3 Structure PNP silicon epitaxial planar transistor. Each lead has same dimensions (1) Base (2) Emit

4.7. 2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf Size:100K _rohm

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_

4.8. 2sa1579.pdf Size:155K _rohm

High-voltage Amplifier Transistor (120V, 50mA) 2SA1579 / 2SA1514K Features Dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25C) 1.25 Parameter Symbol Limits Unit 2.1 Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V 0.1Min. Emitter-base volt

4.9. 2sa1576afra.pdf Size:1342K _rohm

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 150mA Emitter Emitter 2SA2029 2SA1774EB 2SA2029FHA (SC-105AA) (SC-89) F

4.10. 2sa1579fra.pdf Size:1327K _rohm

2SA1579FRA / 2SA1514AK 2SA1579 / 2SA1514K Datasheet PNP -50mA -120V High-Voltage Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO -120V Base Base IC -50mA Emitter Emitter 2SA1514AK 2SA1579FRA 2SA1579 SOT-346 (SC-59) lFeatures SOT-323 (SC-70) 1) High Breakdown Voltage (BVCEO= -120V) 2) Complementary NPN Types : 2SC4102FR

4.11. 2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf Size:168K _rohm

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

4.12. 2sa1036k 2sa1577 2sa854s 2sa854 2sa1036k 2sa1577.pdf Size:101K _rohm

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maxim

4.13. 2sa1576a-q.pdf Size:211K _mcc

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity • Epitaxial Transistors Complementary to 2SC408

4.14. 2sa1577-q.pdf Size:192K _mcc

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SA1577-R Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion • Untral Small Surface Mount Package • Gn

4.15. 2sa1576a-r.pdf Size:211K _mcc

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity • Epitaxial Transistors Complementary to 2SC408

4.16. 2sa1576a-s.pdf Size:211K _mcc

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity • Epitaxial Transistors Complementary to 2SC408

4.17. 2sa1577-p.pdf Size:193K _mcc

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SA1577-R Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion • Untral Small Surface Mount Package • Gn

4.18. 2sa1577-r.pdf Size:193K _mcc

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SA1577-R Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion • Untral Small Surface Mount Package • Gn

4.19. 2sa1576art1-d.pdf Size:42K _onsemi

2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount http://onsemi.com Features • Moisture Sensitivity Level: 1 • Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 Emitter-Base Voltage V(BR)EBO 7.0 Vdc BASE EMITTER Collector Current

4.20. 2sa1577.pdf Size:524K _secos

2SA1577 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 Complements of the 2SC4097 Large IC, MAX=-500mA A L Low VCE(sat). Ideal for low-voltage operation. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 Product-Rank 2SA1577-P 2SA1577-Q 2SA1577

4.21. 2sa1576a.pdf Size:139K _secos

2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. A L 3 3 FEATURES Top View C B 1 Complements of the 2SC4081 1 2 Excellent hFE Linear

4.22. 2sa1579.pdf Size:421K _secos

2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High Breakdown Voltage. (BVCEO = -120V)  Complementary of the 2SC4102 A L 3 3 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank 2SA1579-R 2SA1579-S D Range 180~390

4.23. 2sa1579.pdf Size:289K _htsemi

 2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC

4.24. 2sa1577.pdf Size:317K _lge

 2SA1577 SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

4.25. 2sa1576a.pdf Size:210K _lge

 2SA1576A SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Curre

4.26. 2sa1579.pdf Size:231K _lge

 2SA1579 SOT-323 Transistor(PNP) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

4.27. 2sa1576a.pdf Size:861K _wietron

2SA1576A PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit VCBO Collector-Base Voltage -60 V Collector-Emitter Voltage VCEO -50 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current - Continuous -150 mA Total Device Dissipation PD 200 mW T =25°C A Tj °C Junction Temperature +150 Tstg Storage Temperatu

4.28. 2sa1576axt1.pdf Size:570K _willas

 2SA1576AxT1 SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR ℃ MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter RoHS product for packing code suffix "G" Value Unit Halogen free product for packing code suffix "H" VCBO Collector-Base V

4.29. 2sa1577w.pdf Size:681K _blue-rocket-elect

2SA1577W(BR3CG1577W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package. 特征 / Features 集电极直流电流大，饱和压降低，与 2SC1741S（BR3DG1741SW）互补。 Large Ic low Vce(sat),complementary pair with the 2SC1741S(BR3DG1741SW). 用途 / Applications 用于中功�

4.30. l2sa1577pt1g.pdf Size:192K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series F S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577

4.31. l2sa1576art1g.pdf Size:141K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157

4.32. l2sa1576aqt1g.pdf Size:141K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576A

4.33. l2sa1577rt1g.pdf Size:192K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1577QT1G Series F We declare that the material of product compliance with RoHS requirements. S-L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q

4.34. l2sa1576ast1g.pdf Size:134K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576

4.35. l2sa1577qt1g.pdf Size:192K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q

4.36. 2sa1577.pdf Size:1162K _kexin

SMD Type Transistors PNP Transistors 2SA1577 ■ Features ● Large IC. CMax.=-500mA ● Low VCE(sat).Ideal for low-voltage operation. ● Complements the 2SC4097. 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector

4.37. 2sa1576a.pdf Size:1091K _kexin

SMD Type Transistors PNP Transistors 2SA1576A ■ Features ● Excellent hFE linearity ● Complements the 2SC4081 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -150 mA Collector Power

4.38. 2sa1579.pdf Size:1085K _kexin

SMD Type Transistors PNP Transistors 2SA1579 ■ Features ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102. 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA

4.39. 2sa1577gp.pdf Size:105K _chenmko

CHENMKO ENTERPRISE CO.,LTD 2SA1577GP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capabili

     

 

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