Справочник транзисторов. 2SA1580-4

 

Биполярный транзистор 2SA1580-4 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SA1580-4

Маркировка: QL4

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 70 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 0.05 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 700 MHz

Ёмкость коллекторного перехода (Cc): 1.3 pf

Статический коэффициент передачи тока (hfe): 90

Корпус транзистора: SOT323

Аналоги (замена) для 2SA1580-4

 

 

2SA1580-4 Datasheet (PDF)

7.1. 2sa1580 2sc4104.pdf Size:19K _sanyo

2SA1580-4
2SA1580-4

Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25

7.2. 2sa1580.pdf Size:503K _kexin

2SA1580-4

SMD Type orSMD Type TransistICsPNP Transistors 2SA1580SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh fT.Small reverse transfer capacitance.1 2+0.1+0.050.95 -0.1Adoption of FBET process. 0.1 -0.01+0.11.9 -0.1 Complementary to 2SC41041.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base vo

 8.1. 2sa1587.pdf Size:323K _toshiba

2SA1580-4
2SA1580-4

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag

8.2. 2sa1588.pdf Size:215K _toshiba

2SA1580-4
2SA1580-4

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColl

 8.3. 2sa1586.pdf Size:200K _toshiba

2SA1580-4
2SA1580-4

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2

8.4. 2sa1582 2sc4113.pdf Size:88K _sanyo

2SA1580-4
2SA1580-4

 8.5. 2sb1424 2sa1585s.pdf Size:81K _rohm

2SA1580-4
2SA1580-4

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05

8.6. 2sa1585s 2sb1424 2sb1424.pdf Size:101K _rohm

2SA1580-4
2SA1580-4

TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist

8.7. 2sa1585s-r.pdf Size:351K _mcc

2SA1580-4
2SA1580-4

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

8.8. 2sa1585s-q.pdf Size:351K _mcc

2SA1580-4
2SA1580-4

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

8.9. 2sa1581.pdf Size:76K _no

2SA1580-4

8.10. 2sa1586.pdf Size:77K _secos

2SA1580-4

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain High Voltage and High Current AL Complementary to 2SC4116 33 Small Package Top View C B11 22K EAPPLICATIONS General Purpose Amplifi

8.11. 2sa1586.pdf Size:278K _htsemi

2SA1580-4

2SA1 58 6TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

8.12. 2sa1585s to-92s.pdf Size:242K _lge

2SA1580-4
2SA1580-4

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

8.13. 2sa1587.pdf Size:1603K _kexin

2SA1580-4
2SA1580-4

SMD Type TransistorsPNP Transistors2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC

8.14. 2sa1588.pdf Size:920K _kexin

2SA1580-4
2SA1580-4

SMD Type TransistorsPNP Transistors2SA1588 Features Excellent hFE linearity : hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC41181.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector

8.15. 2sa1586.pdf Size:1130K _kexin

2SA1580-4
2SA1580-4

SMD Type TransistorsPNP Transistors2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec

Другие транзисторы... 2SA1577 , 2SA1578 , 2SA1579N , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , BD139 , 2SA1580-5 , 2SA1581 , 2SA1582 , 2SA1583 , 2SA1584 , 2SA1585 , 2SA1586G , 2SA1586O .

 

 
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