2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 300 ns (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409 Maxi

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -300 mABase current IB -60

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit: mmPower Switching Applications Low collector-emitter saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW (Ta = 25 C) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute

2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = -50 V, I = -150 mA (max) CEO C High h h = 120~400 FE: FE Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2S

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC4210 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -

Ordering number:EN2973PNP Epitaxial Planar Silicon Transistors2SA1699High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003A Excellent hFE linearity.[2SA1699]JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

Ordering number:EN3200PNP/NPN Epitaxial Planar Silicon Transistors2SA1685/2SC4443High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2059 Low saturation voltage.[2SA1685/2SC4443]B : BaseC : CollectorE : Emitter( ) : 2SA1685SANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN3011PNP Epitaxial Planar Silicon Transistor2SA1682TV Camera Deflection,High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2018Afrequency chacateristic (Cre : 1.5pF typ).[2SA1682] Excellent DC current gain ratio (hFE ratio : 1.0 typ).

Ordering number:EN2972PNP Epitaxial Planar Silicon Transistor2SA1669High-Frequency Amplifier ApplicationsFeatures Package Dimensions High cutoff frequnecy : fT=3.0GHz typ.unit:mm High power gain : MAG=11dB typ (f=0.9GHz)2018A Small noise figure : NF=2.0dB typ (f=0.9GHz)[2SA1669]C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximum Rati

Ordering number:EN3018PNP/NPN Epitaxial Planar Silicon Transistors2SA1697/2SC4474High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1697/2SC4474]Features High fT : fT=300MHz. High breakdown voltage : VCEO=200V min. Small reverse transfer capacitan

Ordering number:EN3013PNP/NPN Epitaxial Planar Silicon Transistors2SA1687/2SC4446Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1687/unit:mm2SC4446-applied sets to be made small and slim.2059 High VEBO.[2SA1687/2SC4446]B : BaseC : CollectorE : Emitter( ) : 2SA1687SANYO : MCPSpecifi

Ordering number:EN2535PNP/NPN Epitaxial Planar Silicon Transistors2SA1606/2SC4159High-Voltage Switching, AF 100WDriver ApplicationsApplications Package Dimensions High-voltage switching, AF power amplifier, 100Wunit:mmoutput predrivers.2041[2SA1606/2SC4159]Features Micaless package facilitating mounting.E : EmitterC : CollectorB : Base( ) : 2SA1606SANYO :

Ordering number:EN2798APNP Epitaxial Planar Silicon Transistors2SA1688High-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators. converters, and IF amplifiers.2059A[2SA1688]Features High power gain : PG=22dB typ (f=100MHz). Very small-sized package permitting 2SA168

Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN2926APNP Epitaxial Planar Silicon Transistor2SA1641High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation voltage.2045B Fast switching speed.[2SA1641] Large current capacity. Small and slim package making it easy to make2SA1641-used set smaller.1 : Base2 : Collector3

Ordering number:EN3233PNP Epitaxial Planar Silicon Transistor2SA1689TV Camera DeflectionHigh-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small reverse transfer capacitance and excellent high2003Afrequency chacacteristic.[2SA1689] Excellent DC current gain. Adoption of FBET process.JEDEC : TO-92 B : BaseEIAJ : SC

Ordering number:EN3017PNP/NPN Epitaxial Planar Silicon Transistors2SA1696/2SC4473High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1696/2SC4473]Features High fT : fT=500MHz. High breakdown voltage : VCEO=120V min. Small reverse transfer capacitan

Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute

Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200Rev.2.00Silicon Power Transistor Jul 01, 2010Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETSILICON POWER TRANSISTOR2SA1648,1648-ZPNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit: mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.26.5 0.2This transistor is ideal for use in switching regulators, DC/DC 5.0 0.20.5 0.

DATA SHEETSILICON POWER TRANSISTOR2SA1652PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andot

DATA SHEETSILICON POWER TRANSISTOR2SA1646, 2SA1646-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEETSILICON POWER TRANSISTOR2SA1650PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andother low-

DATA SHEETSILICON POWER TRANSISTOR2SA1645, 2SA1645-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEETSILICON POWER TRANSISTOR2SA1647, 2SA1647-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid

DATA SHEETSILICON POWER TRANSISTOR2SA1647, 2SA1647-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid

DATA SHEETSILICON POWER TRANSISTOR2SA1649, 2SA1649-ZPNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid dr

DATA SHEETSILICON POWER TRANSISTORS2SA1615, 1615-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturationand are ideal for high-efficiency DC/DC converters due to the fast switching speed.FEATURES Large current capacity:IC(DC): -10 A, IC(pulse): -15 A High hF

DATA SHEETSILICON POWER TRANSISTOR2SA1648, 2SA1648-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, solenoid drivers,

DATA SHEETSILICON POWER TRANSISTOR2SA1645, 2SA1645-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation voltage. This transistor is ideal for use in switchingpower supplies, DC/DC converters, motor drivers, solenoid drive

2SA1635TransistorsTransistors2SC4008(90-173-B97)(94L-646-D97)289

Transistor2SA1619, 2SA1619ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC4208 and 2SC4208A5.0 0.2 4.0 0.2Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertionpossible.Absolute Maximum Ratings (Ta=25C) 0.7 0.1Parameter Symb

Transistor2SA1674Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC43912.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450

Transistor2SA1674Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC43912.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450

Transistor2SA1619, 2SA1619ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC4208 and 2SC4208A5.0 0.2 4.0 0.2Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertionpossible.Absolute Maximum Ratings (Ta=25C) 0.7 0.1Parameter Symb

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge

UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1TO-126 1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL VALUE UNIT

UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers withhigh DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo

2SA1617Silicon PNP EpitaxialApplicationHigh voltage amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1617Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJun

2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain A High Voltage L3 Complementary to 2SC4177 3 Top View C B1CLASSIFICATION OF hFE 1 22 K EProduct-Rank 2SA1611-M4 2SA1611-M5Range 90~180 135~27

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1662 TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -120 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) S

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emi

JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION With TO-3PML package Complement to type 2SC4385 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1679 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy

JMnic Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION With TO-3PML package Complement to type 2SC4386 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1633 DESCRIPTION With TO-247 package Complement to type 2SC4278 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and 3 EmitterAbsolute maximum ratings(Tc=25

JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA

JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION With TO-3PML package Complement to type 2SC4387 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Em

JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER C

JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDI

JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1693Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 80 V ICBO VCB=80V 10max A 0.19.6 2.0IEBOVCEO 80 V VEB=6V

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2SA1695Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 140 V ICBO VCB=140V 10max A0.19.6 2.0VCEO 140 V IEBO VEB=6V

2SA1673Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 180 V ICBO VCB=180V 10max AVCEO 180 V IEBO VEB=6V

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SA1667/1668Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)Application : TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20 (TO220F)RatingsRatingsSymbol Unit Symbol ConditionsUnit0.22SA1667 2SA1668 2SA1667 2SA1668 0.24.210.1c0.52.8

2SA1694Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)RatingsSymbol Ratings Unit Symbol Conditions Unit0.24.80.415.6VCBO 120 V ICBO VCB=120V 10max A 0.19.6 2.010maxVCEO 120 V IEBO

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1601 Case : ITO-220Unit : mm(TP15T4)-15A PNPRATINGS

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1600 Case : ITO-220Unit : mm(TP12T4)-12A PNPRATINGS

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1679 Case : ITO-220Unit : mm(TP5T4)-5A PNPRATINGS

Transys ElectronicsL I M I T E D SOT-89 Plastic-Encapsulated Transistors SOT-89 2SA1664 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM : 0.5 W (Tamb=25) 2 3. EMITTER 3 Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELE

2SA1 664TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collect

2SA1662TRANSISTOR (PNP)FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units1 VCBO Collector-Base Voltage -80 V 2 3. EMITTER VCEO Collector-Emitter Voltage -80 V 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ

2SA1 661SOT-89-3L TRANSISTOR(PNP)1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0

2SA1 61 1TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Colle

2SA1662SOT-89 Transistor(PNP)1. BASE SOT-894.62. COLLECTOR B4.41 1.61.81.41.42 3. EMITTER 2.63 4.252.43.75 0.8FeaturesMIN0.530.400.480.442x) Complementary to KTC4374 0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage

ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 120 VCollector Emitter Voltage -VCEO 120 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 800 mABase Current -IB 160 mA0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 ABase Current -IB 0.4 A0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora

SMD Type TransistorsPNP Transistors2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SC44431.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5

SMD Type TransistorsPNP Transistors2SA1682SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-300V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Co

SMD Type TransistorsPNP Transistors2SA1669SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Colle

SMD Type TransistorsPNP Transistors2SA1608 Features High fT : fT=400MHz Complementary to 2SC37391.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss

SMD Type TransistorsPNP Transistors2SA1664 Features1.70 0.1 Small Flat Package High Current Application High Transition Frequency0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Col

SMD Type TransistorsPNP Transistors2SA16811.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC44091.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsPNP Transistors2SA1617SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 C

SMD Type TransistorsPNP Transistors2SA1620SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-300mA1 2 Collector Emitter Voltage VCEO=-80V+0.1+0.050.95 -0.1 0.1 -0.01+0.1 Complementary to 2SC4209 1.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

SMD Type TransistorsPNP Transistors2SA1612 Features High DC Current Gain Complementary to 2SC41801.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Di

SMD Type TransistorsPNP Transistors2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC41771.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA

SMD Type TransistorsPNP Transistors2SA1621SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-800mA1 2 Collector Emitter Voltage VCEO=-30V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type orSMD Type TransistICsPNP Transistors 2SA1607SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFast switching speed.High gain-bandwidth product.1 2+0.1+0.050.95-0.1 0.1-0.01Low saturation voltage.+0.11.9-0.1 Complementary to 2SC41681.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base

Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity: Pb IC(DC):-10A,IC(pulse):-15A. Lead-free High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)-0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci

RoHS 2SA1611SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 053. COLLECTOR Power dissipation PCM : 0.15 W (Tamb=25) 2. 30 0. 05 Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (T

isc Silicon PNP Power Transistor 2SA1668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -10V, I = -0.7A)FE CE CComplement to Type 2SC4382Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose a

isc Silicon PNP Power Transistor 2SA1601DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -7.5ACE(sat) CLarge Current Capability-I = -15ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ide

isc Silicon PNP Power Transistor 2SA1658DESCRIPTIONCollector-Emitter Breakdown VoltageV = -30V(Min)CEOComplement to Type 2SC4369Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max)@ (I = -3A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, driver and powerswitching applications.ABSOLU

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas

isc Silicon PNP Power Transistor 2SA1615DESCRIPTIONLarge current capacity:I = -10A I =-15AC(DC) C(pulse)High h and low saturation voltage:FEh = 200min (V =-2V,I =-0.5A)FE CE CV -0.25V (I =-4A,I =-0.05A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1615 is available for

isc Silicon PNP Power Transistor 2SA1693DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4466Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1657DESCRIPTIONCollector-Emitter Breakdown VoltageV = -150V(Min)CEOComplement to Type 2SC4368Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSO

isc Silicon PNP Power Transistor 2SA1644DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

isc Silicon PNP Power Transistor 2SA1670DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4385Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1648DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Power Transistor 2SA1667DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -10V, I = -0.7A)FE CE CComplement to Type 2SC4381Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose a

isc Silicon PNP Power Transistor 2SA1679DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -2.5ACE(sat) CLarge Current Capability-I = -5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is idea

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -140

isc Silicon PNP Power Transistor 2SA1646-ZDESCRIPTIONFast Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@I = -6ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a very low V , is ideal for useCE(sat)

isc Silicon PNP Power Transistor 2SA1634DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos

isc Silicon PNP Power Transistor 2SA1645-ZDESCRIPTIONLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for use in switching power supplies, DC/DCconverters, motor drivers, solenoid drivers, and other

isc Silicon PNP Power Transistor 2SA1647-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,

isc Silicon PNP Power Transistor 2SA1671DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4386Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1673DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1633DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOHigh Power DissipationHigh Current CapacityComplement to Type 2SC4278Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon PNP Power Transistor 2SA1645DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon PNP Power Transistor 2SA1647DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,D

isc Silicon PNP Power Transistor 2SA1635DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos

isc Silicon PNP Power Transistor 2SA1649DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transis

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type 2SC4370Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage appl

isc Silicon PNP Power Transistor 2SA1615-ZDESCRIPTIONLarge current capacity:I = -10A I =-15AC(DC) C(pulse)High h and low saturation voltage:FEh = 200min (V =-2V,I =-0.5A)FE CE CV -0.25V (I =-4A,I =-0.05A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1615 is available fo

isc Silicon PNP Power Transistor 2SA1648-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis trans

isc Silicon PNP Power Transistor 2SA1646DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@I = -6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features

isc Silicon PNP Power Transistor 2SA1672DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4387Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1649-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltage:V = -0.3V(Max)@ I = -3ACE(sat) CFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis trans

isc Silicon PNP Power Transistor 2SA1651DESCRIPTIONCollector-Emitter Breakdown VoltageV = -100V(Min)CEOFast switching speedLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fTAPPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SY

isc Silicon PNP Power Transistor 2SA1606DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC4159Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, AF power amplifier,100W output predrivers.ABSOLUTE MAXIMUM RATINGS(Ta=2

isc Silicon PNP Power Transistor 2SA1643DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -5A, I = -0.3A)CE(sat) C BComplement to Type 2SC4327Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SA1694DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4467Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL