2SA16 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA16 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08 W
Tensión colector-base (Vcb): 12 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO1
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2SA16 datasheet
2sa1681.pdf
2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 300 ns (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409 Maxi
2sa1620.pdf
2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC4209 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -300 mA Base current IB -60
2sa1680.pdf
2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit mm Power Switching Applications Low collector-emitter saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW (Ta = 25 C) High-speed switching tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute
2sa1618.pdf
2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2S
2sa1621.pdf
2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -
2sa1699.pdf
Ordering number EN2973 PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003A Excellent hFE linearity. [2SA1699] JEDEC TO-92 B Base EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter
2sa1685 2sc4443.pdf
Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C
2sa1682.pdf
Ordering number EN3011 PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2018A frequency chacateristic (Cre 1.5pF typ). [2SA1682] Excellent DC current gain ratio (hFE ratio 1.0 typ).
2sa1669.pdf
Ordering number EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions High cutoff frequnecy fT=3.0GHz typ. unit mm High power gain MAG=11dB typ (f=0.9GHz) 2018A Small noise figure NF=2.0dB typ (f=0.9GHz) [2SA1669] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Rati
2sa1697 2sc4474.pdf
Ordering number EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1697/2SC4474] Features High fT fT=300MHz. High breakdown voltage VCEO=200V min. Small reverse transfer capacitan
2sa1687 2sc4446.pdf
Ordering number EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B Base C Collector E Emitter ( ) 2SA1687 SANYO MCP Specifi
2sa1606 2sc4159.pdf
Ordering number EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E Emitter C Collector B Base ( ) 2SA1606 SANYO
2sa1688.pdf
Ordering number EN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators. converters, and IF amplifiers. 2059A [2SA1688] Features High power gain PG=22dB typ (f=100MHz). Very small-sized package permitting 2SA168
2sa1607 2sc4168.pdf
Ordering number EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2018A Low saturation voltage. [2SA1607/2SC4168] C Collector B Base E Emitter ( ) 2SA1607 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C
2sa1641.pdf
Ordering number EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation voltage. 2045B Fast switching speed. [2SA1641] Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller. 1 Base 2 Collector 3
2sa1689.pdf
Ordering number EN3233 PNP Epitaxial Planar Silicon Transistor 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003A frequency chacacteristic. [2SA1689] Excellent DC current gain. Adoption of FBET process. JEDEC TO-92 B Base EIAJ SC
2sa1696 2sc4473.pdf
Ordering number EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1696/2SC4473] Features High fT fT=500MHz. High breakdown voltage VCEO=120V min. Small reverse transfer capacitan
2sa1683 2sc4414.pdf
Ordering number EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO>80V. 2033 [2SA1683/2SC4414] B Base C Collector E Emitter ( ) 2SA1683 SANYO SPA Specifications Absolute
2sa1646-z.pdf
Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Silicon Power Transistor Jul 01, 2010 Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to- emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v
2sa1649-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sa1648 2sa1648-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1648,1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.2 6.5 0.2 This transistor is ideal for use in switching regulators, DC/DC 5.0 0.2 0.5 0.
2sa1652.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1652 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and ot
2sa1646 2sa1646-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive
2sa1650.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-
2sa1645-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive
2sa1647-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid
2sa1647.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid
2sa1649 2sa1649-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid dr
2sa1615-z.pdf
DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES Large current capacity IC(DC) -10 A, IC(pulse) -15 A High hF
2sa1648-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers,
2sa1645 2sa1645-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive
2sa1635.pdf
2SA1635 Transistors Transistors 2SC4008 (90-173-B97) (94L-646-D97) 289
2sa1619 e.pdf
Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb
2sa1674.pdf
Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC4391 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0
2sa1674 e.pdf
Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC4391 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0
2sa1619.pdf
Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb
2sa1693.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge
2sa1627.pdf
UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ) PARAMETER SYMBOL VALUE UNIT
2sa1627a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
2sa1694.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo
2sa1617.pdf
2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1617 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Jun
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2sa1611.pdf
2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain A High Voltage L 3 Complementary to 2SC4177 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SA1611-M4 2SA1611-M5 Range 90 180 135 27
2sa1662.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1662 TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba
2sa1661.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V
2sa1611.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol
2sa1668.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S
2sa1601.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emi
2sa1658.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE
2sa1640.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=2
2sa1600.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
2sa1693.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1644.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit
2sa1670.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION With TO-3PML package Complement to type 2SC4385 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1667.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S
2sa1679.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1679 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
2sa1695.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1634.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy
2sa1671.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION With TO-3PML package Complement to type 2SC4386 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1673.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1645.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit
2sa1635.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA
2sa1646.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit
2sa1672.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION With TO-3PML package Complement to type 2SC4387 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1651.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Em
2sa1659 2sa1659a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C
2sa1643.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDI
2sa1694.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1693.pdf
2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 80 V ICBO VCB= 80V 10max A 0.1 9.6 2.0 IEBO VCEO 80 V VEB= 6V
2sa1670.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1695.pdf
2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 140 V ICBO VCB= 140V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB= 6V
2sa1673.pdf
2SA1673 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 180 V ICBO VCB= 180V 10max A VCEO 180 V IEBO VEB= 6V
2sa1672.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1667 2sa1668.pdf
2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20 (TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 2SA1667 2SA1668 2SA1667 2SA1668 0.2 4.2 10.1 c0.5 2.8
2sa1694.pdf
2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Symbol Ratings Unit Symbol Conditions Unit 0.2 4.8 0.4 15.6 VCBO 120 V ICBO VCB= 120V 10max A 0.1 9.6 2.0 10max VCEO 120 V IEBO
2sa1601.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1601 Case ITO-220 Unit mm (TP15T4) -15A PNP RATINGS
2sa1600.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1600 Case ITO-220 Unit mm (TP12T4) -12A PNP RATINGS
2sa1679.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case ITO-220 Unit mm (TP5T4) -5A PNP RATINGS
2sa1664.pdf
Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors SOT-89 2SA1664 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM 0.5 W (Tamb=25 ) 2 3. EMITTER 3 Collector current ICM -0.8 A Collector-base voltage V(BR)CBO -35 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE
2sa1664.pdf
2SA1 664 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collect
2sa1662.pdf
2SA1662 TRANSISTOR (PNP) FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units 1 VCBO Collector-Base Voltage -80 V 2 3. EMITTER VCEO Collector-Emitter Voltage -80 V 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ
2sa1661.pdf
2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0
2sa1611.pdf
2SA1 61 1 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Colle
2sa1662 sot-89.pdf
2SA1662 SOT-89 Transistor(PNP) 1. BASE SOT-89 4.6 2. COLLECTOR B 4.4 1 1.6 1.8 1.4 1.4 2 3. EMITTER 2.6 3 4.25 2.4 3.75 0.8 Features MIN 0.53 0.40 0.48 0.44 2x) Complementary to KTC4374 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage
st2sa1661u.pdf
ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 120 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Base Current -IB 160 mA 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150
st2sa1666u.pdf
ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Base Current -IB 0.4 A 0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora
2sa1685.pdf
SMD Type Transistors PNP Transistors 2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SC4443 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5
2sa1682.pdf
SMD Type Transistors PNP Transistors 2SA1682 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Co
2sa1669.pdf
SMD Type Transistors PNP Transistors 2SA1669 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Colle
2sa1608.pdf
SMD Type Transistors PNP Transistors 2SA1608 Features High fT fT=400MHz Complementary to 2SC3739 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss
2sa1664.pdf
SMD Type Transistors PNP Transistors 2SA1664 Features 1.70 0.1 Small Flat Package High Current Application High Transition Frequency 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Col
2sa1681.pdf
SMD Type Transistors PNP Transistors 2SA1681 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4409 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC
2sa1617.pdf
SMD Type Transistors PNP Transistors 2SA1617 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 C
2sa1620.pdf
SMD Type Transistors PNP Transistors 2SA1620 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-300mA 1 2 Collector Emitter Voltage VCEO=-80V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 Complementary to 2SC4209 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect
2sa1612.pdf
SMD Type Transistors PNP Transistors 2SA1612 Features High DC Current Gain Complementary to 2SC4180 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Di
2sa1611.pdf
SMD Type Transistors PNP Transistors 2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC4177 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA
2sa1621.pdf
SMD Type Transistors PNP Transistors 2SA1621 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-800mA 1 2 Collector Emitter Voltage VCEO=-30V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sa1607.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1607 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Fast switching speed. High gain-bandwidth product. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Low saturation voltage. +0.1 1.9-0.1 Complementary to 2SC4168 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base
2sa1615-z.pdf
Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity Pb IC(DC) -10A,IC(pulse) -15A. Lead-free High hFE and low collector saturation voltage hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat) -0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci
2sa1611a.pdf
RoHS 2SA1611 SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 05 3. COLLECTOR Power dissipation PCM 0.15 W (Tamb=25 ) 2. 30 0. 05 Collector current ICM -0.1 A Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (T
2sa1668.pdf
isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4382 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a
2sa1601.pdf
isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -7.5A CE(sat) C Large Current Capability-I = -15A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ide
2sa1658.pdf
isc Silicon PNP Power Transistor 2SA1658 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) CEO Complement to Type 2SC4369 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM
2sa1640.pdf
isc Silicon PNP Power Transistor 2SA1640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max)@ (I = -3A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, driver and power switching applications. ABSOLU
2sa1600.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas
2sa1615.pdf
isc Silicon PNP Power Transistor 2SA1615 DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available for
2sa1693.pdf
isc Silicon PNP Power Transistor 2SA1693 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4466 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sa1657.pdf
isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) CEO Complement to Type 2SC4368 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSO
2sa1644.pdf
isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO
2sa1670.pdf
isc Silicon PNP Power Transistor 2SA1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4385 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sa1648.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1648 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
2sa1667.pdf
isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4381 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a
2sa1679.pdf
isc Silicon PNP Power Transistor 2SA1679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -2.5A CE(sat) C Large Current Capability-I = -5A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is idea
2sa1695.pdf
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140
2sa1646-z.pdf
isc Silicon PNP Power Transistor 2SA1646-Z DESCRIPTION Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features a very low V , is ideal for use CE(sat)
2sa1634.pdf
isc Silicon PNP Power Transistor 2SA1634 DESCRIPTION Low Collector Saturation Voltage V = -1.5V(Max)@ I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC4007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpos
2sa1645-z.pdf
isc Silicon PNP Power Transistor 2SA1645-Z DESCRIPTION Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other
2sa1647-z.pdf
isc Silicon PNP Power Transistor 2SA1647-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators,
2sa1671.pdf
isc Silicon PNP Power Transistor 2SA1671 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4386 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sa1673.pdf
isc Silicon PNP Power Transistor 2SA1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sa1633.pdf
isc Silicon PNP Power Transistor 2SA1633 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High Power Dissipation High Current Capacity Complement to Type 2SC4278 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sa1645.pdf
isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION
2sa1647.pdf
isc Silicon PNP Power Transistor 2SA1647 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators, D
2sa1635.pdf
isc Silicon PNP Power Transistor 2SA1635 DESCRIPTION Low Collector Saturation Voltage V = -1.5V(Max)@ I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC4008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpos
2sa1649.pdf
isc Silicon PNP Power Transistor 2SA1649 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transis
2sa1659.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type 2SC4370 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage appl
2sa1615-z.pdf
isc Silicon PNP Power Transistor 2SA1615-Z DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available fo
2sa1648-z.pdf
isc Silicon PNP Power Transistor 2SA1648-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans
2sa1646.pdf
isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features
2sa1672.pdf
isc Silicon PNP Power Transistor 2SA1672 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sa1649-z.pdf
isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans
2sa1651.pdf
isc Silicon PNP Power Transistor 2SA1651 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) CEO Fast switching speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sa1659 2sa1659a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SY
2sa1606.pdf
isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SC4159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=2
2sa1643.pdf
isc Silicon PNP Power Transistor 2SA1643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.3A) CE(sat) C B Complement to Type 2SC4327 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE
2sa1694.pdf
isc Silicon PNP Power Transistor 2SA1694 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4467 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Otros transistores... 2SA1593T, 2SA1594, 2SA1595, 2SA1596, 2SA1597, 2SA1598, 2SA1599, 2SA15H, TIP42C, 2SA160, 2SA1600, 2SA1601, 2SA1602, 2SA1603, 2SA1604, 2SA1604R, 2SA1604S
Parámetros del transistor bipolar y su interrelación.
History: 2SA1602
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