2SA16 Todos los transistores

2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 300 ns (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409 Maxi

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC4209 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -300 mA Base current IB -60

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit mm Power Switching Applications Low collector-emitter saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW (Ta = 25 C) High-speed switching tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute

2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2S

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -

Ordering number EN2973 PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003A Excellent hFE linearity. [2SA1699] JEDEC TO-92 B Base EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number EN3011 PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2018A frequency chacateristic (Cre 1.5pF typ). [2SA1682] Excellent DC current gain ratio (hFE ratio 1.0 typ).

Ordering number EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions High cutoff frequnecy fT=3.0GHz typ. unit mm High power gain MAG=11dB typ (f=0.9GHz) 2018A Small noise figure NF=2.0dB typ (f=0.9GHz) [2SA1669] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Rati

Ordering number EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1697/2SC4474] Features High fT fT=300MHz. High breakdown voltage VCEO=200V min. Small reverse transfer capacitan

Ordering number EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B Base C Collector E Emitter ( ) 2SA1687 SANYO MCP Specifi

Ordering number EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E Emitter C Collector B Base ( ) 2SA1606 SANYO

Ordering number EN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators. converters, and IF amplifiers. 2059A [2SA1688] Features High power gain PG=22dB typ (f=100MHz). Very small-sized package permitting 2SA168

Ordering number EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2018A Low saturation voltage. [2SA1607/2SC4168] C Collector B Base E Emitter ( ) 2SA1607 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation voltage. 2045B Fast switching speed. [2SA1641] Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller. 1 Base 2 Collector 3

Ordering number EN3233 PNP Epitaxial Planar Silicon Transistor 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003A frequency chacacteristic. [2SA1689] Excellent DC current gain. Adoption of FBET process. JEDEC TO-92 B Base EIAJ SC

Ordering number EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1696/2SC4473] Features High fT fT=500MHz. High breakdown voltage VCEO=120V min. Small reverse transfer capacitan

Ordering number EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO>80V. 2033 [2SA1683/2SC4414] B Base C Collector E Emitter ( ) 2SA1683 SANYO SPA Specifications Absolute

Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Silicon Power Transistor Jul 01, 2010 Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to- emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET SILICON POWER TRANSISTOR 2SA1648,1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.2 6.5 0.2 This transistor is ideal for use in switching regulators, DC/DC 5.0 0.2 0.5 0.

DATA SHEET SILICON POWER TRANSISTOR 2SA1652 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and ot

DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-

DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid dr

DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES Large current capacity IC(DC) -10 A, IC(pulse) -15 A High hF

DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers,

DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

2SA1635 Transistors Transistors 2SC4008 (90-173-B97) (94L-646-D97) 289

Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb

Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC4391 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0

Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC4391 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0

Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge

UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ) PARAMETER SYMBOL VALUE UNIT

UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo

2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1617 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Jun

2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain A High Voltage L 3 Complementary to 2SC4177 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SA1611-M4 2SA1611-M5 Range 90 180 135 27

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1662 TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emi

JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION With TO-3PML package Complement to type 2SC4385 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1679 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy

JMnic Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION With TO-3PML package Complement to type 2SC4386 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA

JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION With TO-3PML package Complement to type 2SC4387 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Em

JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C

JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDI

JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 80 V ICBO VCB= 80V 10max A 0.1 9.6 2.0 IEBO VCEO 80 V VEB= 6V

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2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 140 V ICBO VCB= 140V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB= 6V

2SA1673 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 180 V ICBO VCB= 180V 10max A VCEO 180 V IEBO VEB= 6V

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20 (TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 2SA1667 2SA1668 2SA1667 2SA1668 0.2 4.2 10.1 c0.5 2.8

2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Symbol Ratings Unit Symbol Conditions Unit 0.2 4.8 0.4 15.6 VCBO 120 V ICBO VCB= 120V 10max A 0.1 9.6 2.0 10max VCEO 120 V IEBO

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1601 Case ITO-220 Unit mm (TP15T4) -15A PNP RATINGS

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1600 Case ITO-220 Unit mm (TP12T4) -12A PNP RATINGS

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case ITO-220 Unit mm (TP5T4) -5A PNP RATINGS

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors SOT-89 2SA1664 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM 0.5 W (Tamb=25 ) 2 3. EMITTER 3 Collector current ICM -0.8 A Collector-base voltage V(BR)CBO -35 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

2SA1 664 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collect

2SA1662 TRANSISTOR (PNP) FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units 1 VCBO Collector-Base Voltage -80 V 2 3. EMITTER VCEO Collector-Emitter Voltage -80 V 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ

2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0

2SA1 61 1 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Colle

2SA1662 SOT-89 Transistor(PNP) 1. BASE SOT-89 4.6 2. COLLECTOR B 4.4 1 1.6 1.8 1.4 1.4 2 3. EMITTER 2.6 3 4.25 2.4 3.75 0.8 Features MIN 0.53 0.40 0.48 0.44 2x) Complementary to KTC4374 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 120 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Base Current -IB 160 mA 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150

ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Base Current -IB 0.4 A 0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora

SMD Type Transistors PNP Transistors 2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SC4443 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5

SMD Type Transistors PNP Transistors 2SA1682 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Co

SMD Type Transistors PNP Transistors 2SA1669 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Colle

SMD Type Transistors PNP Transistors 2SA1608 Features High fT fT=400MHz Complementary to 2SC3739 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss

SMD Type Transistors PNP Transistors 2SA1664 Features 1.70 0.1 Small Flat Package High Current Application High Transition Frequency 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Col

SMD Type Transistors PNP Transistors 2SA1681 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4409 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors PNP Transistors 2SA1617 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 C

SMD Type Transistors PNP Transistors 2SA1620 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-300mA 1 2 Collector Emitter Voltage VCEO=-80V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 Complementary to 2SC4209 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

SMD Type Transistors PNP Transistors 2SA1612 Features High DC Current Gain Complementary to 2SC4180 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Di

SMD Type Transistors PNP Transistors 2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC4177 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA

SMD Type Transistors PNP Transistors 2SA1621 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-800mA 1 2 Collector Emitter Voltage VCEO=-30V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type or SMD Type TransistICs PNP Transistors 2SA1607 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Fast switching speed. High gain-bandwidth product. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Low saturation voltage. +0.1 1.9-0.1 Complementary to 2SC4168 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base

Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity Pb IC(DC) -10A,IC(pulse) -15A. Lead-free High hFE and low collector saturation voltage hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat) -0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci

RoHS 2SA1611 SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 05 3. COLLECTOR Power dissipation PCM 0.15 W (Tamb=25 ) 2. 30 0. 05 Collector current ICM -0.1 A Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (T

isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4382 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a

isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -7.5A CE(sat) C Large Current Capability-I = -15A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ide

isc Silicon PNP Power Transistor 2SA1658 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) CEO Complement to Type 2SC4369 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max)@ (I = -3A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, driver and power switching applications. ABSOLU

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

isc Silicon PNP Power Transistor 2SA1615 DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available for

isc Silicon PNP Power Transistor 2SA1693 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4466 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) CEO Complement to Type 2SC4368 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSO

isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

isc Silicon PNP Power Transistor 2SA1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4385 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1648 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4381 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a

isc Silicon PNP Power Transistor 2SA1679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -2.5A CE(sat) C Large Current Capability-I = -5A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is idea

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140

isc Silicon PNP Power Transistor 2SA1646-Z DESCRIPTION Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features a very low V , is ideal for use CE(sat)

isc Silicon PNP Power Transistor 2SA1634 DESCRIPTION Low Collector Saturation Voltage V = -1.5V(Max)@ I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC4007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpos

isc Silicon PNP Power Transistor 2SA1645-Z DESCRIPTION Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other

isc Silicon PNP Power Transistor 2SA1647-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators,

isc Silicon PNP Power Transistor 2SA1671 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4386 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1633 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High Power Dissipation High Current Capacity Complement to Type 2SC4278 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon PNP Power Transistor 2SA1647 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators, D

isc Silicon PNP Power Transistor 2SA1635 DESCRIPTION Low Collector Saturation Voltage V = -1.5V(Max)@ I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC4008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpos

isc Silicon PNP Power Transistor 2SA1649 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transis

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type 2SC4370 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage appl

isc Silicon PNP Power Transistor 2SA1615-Z DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available fo

isc Silicon PNP Power Transistor 2SA1648-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans

isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features

isc Silicon PNP Power Transistor 2SA1672 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans

isc Silicon PNP Power Transistor 2SA1651 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) CEO Fast switching speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SY

isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SC4159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=2

isc Silicon PNP Power Transistor 2SA1643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.3A) CE(sat) C B Complement to Type 2SC4327 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SA1694 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4467 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL