Справочник транзисторов. 2SA162

 

Биполярный транзистор 2SA162 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA162
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.05 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимальный постоянный ток коллектора (Ic): 0.015 A
   Предельная температура PN-перехода (Tj): 65 °C
   Граничная частота коэффициента передачи тока (ft): 125 MHz
   Ёмкость коллекторного перехода (Cc): 2 pf
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO18

 Аналоги (замена) для 2SA162

 

 

2SA162 Datasheet (PDF)

 0.1. Size:102K  1
2sa1623.pdf

2SA162
2SA162

 0.2. Size:184K  toshiba
2sa1620.pdf

2SA162
2SA162

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -300 mABase current IB -60

 0.3. Size:194K  toshiba
2sa1621.pdf

2SA162
2SA162

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC4210 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -

 0.4. Size:128K  sanyo
2sa1624.pdf

2SA162
2SA162

 0.5. Size:147K  nec
2sa1627.pdf

2SA162
2SA162

 0.6. Size:194K  nec
2sa1625.pdf

2SA162
2SA162

 0.7. Size:131K  nec
2sa1626.pdf

2SA162
2SA162

 0.8. Size:97K  utc
2sa1627.pdf

2SA162
2SA162

UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1TO-126 1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL VALUE UNIT

 0.9. Size:233K  utc
2sa1627a.pdf

2SA162
2SA162

UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

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2sa1620.pdf

2SA162
2SA162

SMD Type TransistorsPNP Transistors2SA1620SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-300mA1 2 Collector Emitter Voltage VCEO=-80V+0.1+0.050.95 -0.1 0.1 -0.01+0.1 Complementary to 2SC4209 1.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

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2sa1621.pdf

2SA162
2SA162

SMD Type TransistorsPNP Transistors2SA1621SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-800mA1 2 Collector Emitter Voltage VCEO=-30V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

Другие транзисторы... 2SA1612 , 2SA1613 , 2SA1614 , 2SA1615 , 2SA1616 , 2SA1617 , 2SA1618 , 2SA1619 , 2SD669A , 2SA1620 , 2SA1621 , 2SA1622 , 2SA1623 , 2SA1624 , 2SA1625 , 2SA1626 , 2SA1627 .

 

 
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