Биполярный транзистор 2SA163
Даташит. Аналоги
Наименование производителя: 2SA163
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.05
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимальный постоянный ток коллектора (Ic): 0.015
A
Предельная температура PN-перехода (Tj): 65
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 2
pf
Статический коэффициент передачи тока (hfe): 65
Корпус транзистора:
TO18
- подбор биполярного транзистора по параметрам
2SA163
Datasheet (PDF)
0.2. Size:38K rohm
2sa1635.pdf 

2SA1635TransistorsTransistors2SC4008(90-173-B97)(94L-646-D97)289
0.4. Size:156K jmnic
2sa1634.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy
0.5. Size:158K jmnic
2sa1633.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1633 DESCRIPTION With TO-247 package Complement to type 2SC4278 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and 3 EmitterAbsolute maximum ratings(Tc=25
0.6. Size:160K jmnic
2sa1635.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
0.7. Size:217K inchange semiconductor
2sa1634.pdf 

isc Silicon PNP Power Transistor 2SA1634DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
0.8. Size:220K inchange semiconductor
2sa1633.pdf 

isc Silicon PNP Power Transistor 2SA1633DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOHigh Power DissipationHigh Current CapacityComplement to Type 2SC4278Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
0.9. Size:217K inchange semiconductor
2sa1635.pdf 

isc Silicon PNP Power Transistor 2SA1635DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: KRA108S
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