2SA163
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA163
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-base (Vcb): 20
V
Corriente del colector DC máxima (Ic): 0.015
A
Temperatura operativa máxima (Tj): 65
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 65
Paquete / Cubierta:
TO18
Búsqueda de reemplazo de transistor bipolar 2SA163
2SA163
Datasheet (PDF)
0.2. Size:38K rohm
2sa1635.pdf 
2SA1635TransistorsTransistors2SC4008(90-173-B97)(94L-646-D97)289
0.4. Size:156K jmnic
2sa1634.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy
0.5. Size:158K jmnic
2sa1633.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1633 DESCRIPTION With TO-247 package Complement to type 2SC4278 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and 3 EmitterAbsolute maximum ratings(Tc=25
0.6. Size:160K jmnic
2sa1635.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
0.7. Size:217K inchange semiconductor
2sa1634.pdf
isc Silicon PNP Power Transistor 2SA1634DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
0.8. Size:220K inchange semiconductor
2sa1633.pdf
isc Silicon PNP Power Transistor 2SA1633DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOHigh Power DissipationHigh Current CapacityComplement to Type 2SC4278Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
0.9. Size:217K inchange semiconductor
2sa1635.pdf
isc Silicon PNP Power Transistor 2SA1635DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
Otros transistores... 2SA1622
, 2SA1623
, 2SA1624
, 2SA1625
, 2SA1626
, 2SA1627
, 2SA1628
, 2SA1629
, B647
, 2SA1630
, 2SA1633
, 2SA1634
, 2SA1635
, 2SA164
, 2SA1640
, 2SA1641
, 2SA1643
.
