UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1693Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 80 V ICBO VCB=80V 10max A 0.19.6 2.0IEBOVCEO 80 V VEB=6V

isc Silicon PNP Power Transistor 2SA1693DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4466Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Ordering number:EN2973PNP Epitaxial Planar Silicon Transistors2SA1699High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003A Excellent hFE linearity.[2SA1699]JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

Ordering number:EN3018PNP/NPN Epitaxial Planar Silicon Transistors2SA1697/2SC4474High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1697/2SC4474]Features High fT : fT=300MHz. High breakdown voltage : VCEO=200V min. Small reverse transfer capacitan

Ordering number:EN3017PNP/NPN Epitaxial Planar Silicon Transistors2SA1696/2SC4473High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1696/2SC4473]Features High fT : fT=500MHz. High breakdown voltage : VCEO=120V min. Small reverse transfer capacitan

UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers withhigh DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1695Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 140 V ICBO VCB=140V 10max A0.19.6 2.0VCEO 140 V IEBO VEB=6V

2SA1694Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)RatingsSymbol Ratings Unit Symbol Conditions Unit0.24.80.415.6VCBO 120 V ICBO VCB=120V 10max A 0.19.6 2.010maxVCEO 120 V IEBO

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -140

isc Silicon PNP Power Transistor 2SA1694DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4467Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL