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2SA1693 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1693
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3P
 

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2SA1693 PDF detailed specifications

 ..1. Size:123K  utc
2sa1693.pdf pdf_icon

2SA1693

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge... See More ⇒

 ..2. Size:191K  jmnic
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2SA1693

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒

 ..3. Size:27K  sanken-ele
2sa1693.pdf pdf_icon

2SA1693

2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 80 V ICBO VCB= 80V 10max A 0.1 9.6 2.0 IEBO VCEO 80 V VEB= 6V ... See More ⇒

 ..4. Size:222K  inchange semiconductor
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2SA1693

isc Silicon PNP Power Transistor 2SA1693 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4466 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

Otros transistores... 2SA1688-3 , 2SA1688-4 , 2SA1688-5 , 2SA1689 , 2SA168A , 2SA169 , 2SA1690 , 2SA1692 , B772 , 2SA1693O , 2SA1693P , 2SA1693Y , 2SA1694 , 2SA1694O , 2SA1694P , 2SA1694Y , 2SA1695 .

 

 
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