2SA1701 datasheet, аналоги, основные параметры
Наименование производителя: 2SA1701 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 typ MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 140
Корпус транзистора: NMP
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Аналоги (замена) для 2SA1701
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2SA1701 даташит
..1. Size:143K sanyo
2sa1701 2sc4481.pdf 
Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt
8.1. Size:134K 1
2sa1704.pdf 
Ordering number EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit mm 2064 Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.
8.3. Size:115K sanyo
2sa1709 2sc4489.pdf 
Ordering number ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064A Fast switching speed. [2SA1709/2SC4489] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Base 2 Collector ( ) 2SA1709 3
8.4. Size:114K sanyo
2sa1705.pdf 
Ordering number ENN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064A Features [2SA1705/2SC4485] 2.5 Adoption of FBET process. 1.45 Fast switching speed. 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector (
8.5. Size:68K sanyo
2sa1708 2sc4488.pdf 
Ordering number EN3094A 2SA1708 / 2SC4488 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1708 / 2SC4488 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) 2SA1708 Absolute Maximum Ratings at Ta=25 C Parameter Symbol
8.7. Size:76K sanyo
2sa1700.pdf 
Ordering number EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collecto
8.9. Size:90K sanyo
2sa1702.pdf 
Ordering number EN3091 PNP Epitaxial Planar Silicon Transistor 2SA1702 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation votlage. 2064 Large current capacity. [2SA1702] Fast switching speed. E Emitter C Collector B Base SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C
8.10. Size:179K sanyo
2sa1706.pdf 
Ordering number ENN3026A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064A Features [2SA1706/2SC4486] 2.5 Adoption of FBET, MBIT processes. 1.45 Large current capacity and wide ASO. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5
8.12. Size:61K sanyo
2sa1707 2sc4487.pdf 
Ordering number ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064A Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Em
8.13. Size:125K sanyo
2sa1703 2sc4483.pdf 
Ordering number EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm 2064 [2SA1703/2SC4483] E Emitter C Collector B Base ( ) 2SA1703 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol
8.14. Size:556K onsemi
2sa1708s-an 2sa1708t-an 2sc4488s-an 2sc4488t-an.pdf 
Ordering number EN3094B 2SA1708/2SC4488 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) - 100V, - 1A, Low VCE sat , PNP NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Ba
8.15. Size:545K onsemi
2sa1707s-an 2sa1707t-an 2sc4487s-an 2sc4487t-an.pdf 
Ordering number EN3093A 2SA1707/2SC4487 Bipolar Transistor http //onsemi.com (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings
8.16. Size:517K onsemi
2sa1706s-an 2sa1706t-an.pdf 
Ordering number EN3026B 2SA1706 Bipolar Transistor http //onsemi.com ( ) 50V, 2A, Low VCE sat , PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Large current capacity and wide ASO Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Rating
8.17. Size:545K onsemi
2sa1709s-an 2sa1709t-an 2sc4489s-an 2sc4489t-an.pdf 
Ordering number EN3096A 2SA1709/2SC4489 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC
8.18. Size:519K onsemi
2sa1705s-an 2sa1705t-an.pdf 
Ordering number EN3025A 2SA1705 Bipolar Transistor http //onsemi.com ( ) -50V, -1A, Low VCE sat , PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers Features Adoption of FBET process Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --60 V Collecto
8.19. Size:156K utc
2sa1700.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T TO-251 B C E Tube 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R TO-252 B C E Tape Ree
8.20. Size:205K lge
2sa1700.pdf 
2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Coll
8.21. Size:310K lzg
2sa1703 3ca1703.pdf 
2SA1703(3CA1703) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier, electronic governor applications. Features Low V . CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V E
8.22. Size:236K inchange semiconductor
2sa1700.pdf 
isc Silicon PNP Power Transistor 2SA1700 DESCRIPTION High breakdown voltage Low Collector-Emitter Saturation Voltage High Power Dissipation- P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Другие транзисторы: 2SA1695Y, 2SA1696, 2SA1697, 2SA1698, 2SA1699, 2SA17, 2SA170, 2SA1700, 2SB817, 2SA1702, 2SA1703, 2SA1704, 2SA1705, 2SA1706, 2SA1707, 2SA1708, 2SA1709
