2SA1722 datasheet и подбор замены

 8.1. Size:245K  toshiba
 2sa1721.pdf 

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, VCEO = -300 V Low saturation voltage V = -0.5 V (max) CE (sat) Small collector output capacitance C = 5.5 pF (typ.) o

 8.2. Size:230K  toshiba
 2sa1721r 2sa1721o.pdf 

 8.3. Size:97K  sanyo
 2sa1729.pdf 

Ordering number EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1729] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vie

 8.4. Size:81K  sanyo
 2sa1724.pdf 

Ordering number EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=1.5GHz typ). unit mm High current (IC=300mA). 2038A Adoption of FBET process. [2SA1724] 1 Base 2 Collector 3 Emitter Marking AJ (Bottom view) Specifications SANYO PCP Absolute Maximum

 8.5. Size:80K  sanyo
 2sa1723.pdf 

Ordering number EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions Wideband amplifiers. unit mm High-frequency drivers. 2009B [2SA1723] Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process. 1 Emitter 2 Collector 3 Base JEDE

 8.6. Size:91K  sanyo
 2sa1728.pdf 

Ordering number EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit mm Low collector-to-emitter saturation voltage. 2018A Fast switching speed. [2SA1728] Small-sized package. C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Ratings at Ta =

 8.7. Size:113K  nec
 2sa1720.pdf 

DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATUR

 8.8. Size:250K  rohm
 2sa1812 2sa1727 2sa1776.pdf 

2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25 C) Paramete

 8.9. Size:188K  jmnic
 2sa1725.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION With TO-220F package Complement to type 2SC4511 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag

 8.10. Size:192K  jmnic
 2sa1726.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION With TO-220C package Complement to type 2SC4512 APPLICATIONS Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

 8.11. Size:27K  sanken-ele
 2sa1725.pdf 

2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 80 V VCB= 80V 10max A 2.8 ICBO VCEO 80 V IEBO VEB= 6V 10

 8.12. Size:23K  sanken-ele
 2sa1726.pdf 

2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 80 ICBO VCB= 80V 10max A V VCEO 80 IEBO VEB= 6V 10m

 8.13. Size:838K  kexin
 2sa1729.pdf 

SMD Type Transistors PNP Transistors 2SA1729 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 Fast switching speed. Small-sized package. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

 8.14. Size:869K  kexin
 2sa1724.pdf 

SMD Type Transistors PNP Transistors 2SA1724 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.3A Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

 8.15. Size:991K  kexin
 2sa1721.pdf 

SMD Type Transistors PNP Transistors 2SA1721 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-300V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC4497 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

 8.16. Size:1192K  kexin
 2sa1728.pdf 

SMD Type Transistors PNP Transistors 2SA1728 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-40V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Coll

 8.17. Size:213K  inchange semiconductor
 2sa1725.pdf 

isc Silicon PNP Power Transistor 2SA1725 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -2A CE(sat) C High Switching Speed Complement to Type 2SC4511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.18. Size:216K  inchange semiconductor
 2sa1726.pdf 

isc Silicon PNP Power Transistor 2SA1726 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -2A CE(sat) C High Switching Speed Complement to Type 2SC4512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V