2SA1730 - описание и поиск аналогов

Ordering number EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions Adoption of FBET , MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1730] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vi

SMD Type Transistors PNP Transistors 2SA1730 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. 0.42 0.1 0.46 0.1 Small-sized package. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -500 mA) High speed switching time t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -700 mA) High speed switching time t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC

Ordering number EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features Package Dimensions Adoption of FBET processes. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SA1732] Fast switching speed. 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1732] 1

Ordering number EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SA1731] Fast switching speed. 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1

Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switch (pair with 2SC3938) 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rati

Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switch (pair with 2SC3938) 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rati

Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08 0.4 0.04 zine packing. 0.5 0.08 1.5 0.1

Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switch (pair with 2SC3757) Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2

Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switch (pair with 2SC3757) Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2

SMD Type Transistors PNP Transistors 2SA1736 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors PNP Transistors 2SA1735 Features 1.70 0.1 Low saturation voltage High speed switching time Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SC4540 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors PNP Transistors 2SA1734 1.70 0.1 Features Low saturation voltage High speed switching time 0.42 0.1 0.46 0.1 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4539 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors PNP Transistors 2SA1738 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 Complementary to 2SC3757 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector