Справочник транзисторов. 2SA1732

 

Биполярный транзистор 2SA1732 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1732
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO218

 Аналоги (замена) для 2SA1732

 

 

2SA1732 Datasheet (PDF)

 ..1. Size:99K  sanyo
2sa1732.pdf

2SA1732
2SA1732

Ordering number:EN3136PNP Epitaxial Planar Silicon Transistor2SA1732High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1732] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1732]1

 8.1. Size:192K  toshiba
2sa1736.pdf

2SA1732
2SA1732

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time: tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol

 8.2. Size:150K  toshiba
2sa1735.pdf

2SA1732
2SA1732

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -500 mA) High speed switching time: t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540

 8.3. Size:183K  toshiba
2sa1734.pdf

2SA1732
2SA1732

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -700 mA) High speed switching time: t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC

 8.4. Size:97K  sanyo
2sa1730.pdf

2SA1732
2SA1732

Ordering number:EN3134PNP Epitaxial Planar Silicon Transistor2SA1730High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET , MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1730] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vi

 8.5. Size:100K  sanyo
2sa1731.pdf

2SA1732
2SA1732

Ordering number:EN3135APNP Epitaxial Planar Silicon Transistor2SA1731High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1731] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1

 8.6. Size:44K  panasonic
2sa1739 e.pdf

2SA1732
2SA1732

Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati

 8.7. Size:40K  panasonic
2sa1739.pdf

2SA1732
2SA1732

Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati

 8.8. Size:40K  panasonic
2sa1737 e.pdf

2SA1732
2SA1732

Transistor2SA1737Silicon PNP epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.080.4 0.04zine packing.0.5 0.081.5 0.1

 8.9. Size:45K  panasonic
2sa1738 e.pdf

2SA1732
2SA1732

Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2

 8.10. Size:41K  panasonic
2sa1738.pdf

2SA1732
2SA1732

Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2

 8.11. Size:1201K  kexin
2sa1736.pdf

2SA1732
2SA1732

SMD Type TransistorsPNP Transistors2SA17361.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45411.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

 8.12. Size:1050K  kexin
2sa1730.pdf

2SA1732
2SA1732

SMD Type TransistorsPNP Transistors2SA17301.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.0.42 0.10.46 0.1 Small-sized package.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

 8.13. Size:960K  kexin
2sa1735.pdf

2SA1732
2SA1732

SMD Type TransistorsPNP Transistors2SA1735 Features 1.70 0.1 Low saturation voltage High speed switching time Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.10.46 0.1 Complementary to 2SC45401.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

 8.14. Size:936K  kexin
2sa1734.pdf

2SA1732
2SA1732

SMD Type TransistorsPNP Transistors2SA17341.70 0.1 Features Low saturation voltage High speed switching time0.42 0.10.46 0.1 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45391.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

 8.15. Size:630K  kexin
2sa1738.pdf

2SA1732
2SA1732

SMD Type TransistorsPNP Transistors2SA1738SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SC37571.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

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