Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati

Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time: tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -500 mA) High speed switching time: t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -700 mA) High speed switching time: t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC

Ordering number:EN3134PNP Epitaxial Planar Silicon Transistor2SA1730High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET , MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1730] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vi

Ordering number:EN3136PNP Epitaxial Planar Silicon Transistor2SA1732High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1732] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1732]1

Ordering number:EN3135APNP Epitaxial Planar Silicon Transistor2SA1731High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1731] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1

Transistor2SA1737Silicon PNP epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.080.4 0.04zine packing.0.5 0.081.5 0.1

Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2

Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2

SMD Type TransistorsPNP Transistors2SA17361.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45411.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsPNP Transistors2SA17301.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.0.42 0.10.46 0.1 Small-sized package.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

SMD Type TransistorsPNP Transistors2SA1735 Features 1.70 0.1 Low saturation voltage High speed switching time Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.10.46 0.1 Complementary to 2SC45401.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsPNP Transistors2SA17341.70 0.1 Features Low saturation voltage High speed switching time0.42 0.10.46 0.1 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45391.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsPNP Transistors2SA1738SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SC37571.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector