Биполярный транзистор 2SA1739 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1739
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: TO236
2SA1739 Datasheet (PDF)
2sa1739 e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati
2sa1739.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati
2sa1736.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time: tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol
2sa1735.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -500 mA) High speed switching time: t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540
2sa1734.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -700 mA) High speed switching time: t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC
2sa1730.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Ordering number:EN3134PNP Epitaxial Planar Silicon Transistor2SA1730High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET , MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1730] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vi
2sa1732.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Ordering number:EN3136PNP Epitaxial Planar Silicon Transistor2SA1732High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1732] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1732]1
2sa1731.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Ordering number:EN3135APNP Epitaxial Planar Silicon Transistor2SA1731High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1731] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1
2sa1737 e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SA1737Silicon PNP epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.080.4 0.04zine packing.0.5 0.081.5 0.1
2sa1738 e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2
2sa1738.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2
2sa1736.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SA17361.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45411.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC
2sa1730.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SA17301.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.0.42 0.10.46 0.1 Small-sized package.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V
2sa1735.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SA1735 Features 1.70 0.1 Low saturation voltage High speed switching time Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.10.46 0.1 Complementary to 2SC45401.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sa1734.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SA17341.70 0.1 Features Low saturation voltage High speed switching time0.42 0.10.46 0.1 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45391.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC
2sa1738.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SA1738SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SC37571.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
![2SA1739](https://alltransistors.com/images/us.png)
![2SA1739](https://alltransistors.com/images/es.png)
![2SA1739](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS