2SA1764 - описание и поиск аналогов

Ordering number EN3180B PNP Epitaxial Planar Silicon Transistor 2SA1764 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2018A High gain-bandwidth product. [2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-applied sets to be made small and slim. Comp

SMD Type Transistors PNP Transistors 2SA1764 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-200mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

Ordering number EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High DC current gain (hFE=500 to 1200). 2038 Large current capacity. [2SA1766] Low collector-to-emitter saturation voltage. High VEBO. E Emitter C Collec

Ordering number ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064A Features [2SA1768/2SC4612] 2.5 Adoption of MBIT process. 1.45 High breakdown voltage, large current capacity. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5 1

Ordering number EN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2033 High gain-bandwidth product. [2SA1765] Small collector capacitance. Complementary pair with the 2SC4454. B Base C Collector E Emitter SANYO SPA Speci

Ordering number EN3179A PNP Epitaxial Planar Silicon Transistor 2SA1763 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2059 High gain-bandwidth product. [2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763- applied sets to be made small and slim.

Ordering number EN3582A 2SA1768 Bipolar Transistor http //onsemi.com ( ) 180V, 160A, Low VCE sat PNP Single NMP Applicaitons Color TV sound output, converter, inverter Features Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt

SMD Type Transistors PNP Transistors 2SA1766 1.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity. 0.42 0.1 0.46 0.1 Low collector-to-emitter saturation voltage. High VEBO. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base