SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1795 Case : E-pack(TE5T4)Unit : mm-5A PNPRATINGS

Ordering number:EN3709PNP Epitaxial Planar Silicon Transistors2SA179820V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT processes.unit:mm Low saturation voltage.2042A Fast switching speed.[2SA1798] Large current capacity.B : BaseC : CollectorE : EmitterSANYO : TO-126MLSpecificationsAbsolute Maximum Ratings at Ta = 25CParam

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO -50 VCollector-emitter voltage

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

Power Transistor (-50V, -3A) 2SA1797 Features Dimensions (Unit : mm) 1) Low saturation voltage. MPT3VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. 4.51.51.63) Complements the 2SC4672. (1) (2) (3) Packaging specifications 0.40.50.4 0.4Type 2SA17971.5 1.53.0(1)BasePackage MPT3(2)CollectorhFE PQ(3)Emi

Transistor2SA1791Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46561.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Ma

Transistor2SA1790Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46261.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.SS-Mini type package, allowing downsizing of the equipment 1and automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Transistor2SA1791Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46561.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Ma

Transistor2SA1790Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46261.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.SS-Mini type package, allowing downsizing of the equipment 1and automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbo

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SA1797G-x-AA3-R SOT-223 B C E Tape Reel- 2SA1797G-x-AB3-R SOT-8

2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 123APACKAGE DIMENSIONS ECB D1F G2H K3J L1. Base2. CollectorMillimeter Millimeter REF. REF. 3. EmitterMin. Max. Min. Max. A 4.40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR 1 Excellent DC current gain characteristics 2 Complements to 2SC4672 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1796 Case : E-pack(TE7T4)Unit : mm-7A PNPRATINGS

2SA1797SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B1 4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53 Low saturation voltage 0.400.480.442x)0.13 B0.35 0.37 Excellent DC current gain characteristics 1.53.0 Complements to 2SC4672 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless other

WILLAS2SA1797SOT-89 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)FEATURES SOT-89 Low saturation voltage Excellent DC current gain characteristics 1. BASEPb-Free package is available RoHS product for packing code suffix "G" 2. COLLECTOR 1Halogen free product for packing code suffix "H" 23. EMITTER3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parame

2SA1797 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC4672 Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672. / Applications

SMD Type TransistorsPower Transistor2SA1797SOT-89 Unit: mm+0.14.50-0.1 1.50+0.1-0.11.80+0.1-0.1FeaturesLow saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.0.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.1Excellent DC current gain characteristics.Complements the 2SA1797 and 2SC4672.1. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta

SMD Type TransistorsPNP Transistors2SA1797 Features1.70 0.1 Low saturation voltage Excellent DC current gain characteristics Complements to 2SC46720.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Vol

SMD Type TransistorsPower Transistor2SA1797SOT-89 Unit: mm+0.14.50-0.1 1.50+0.1-0.11.80+0.1-0.1FeaturesLow saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.0.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.1Excellent DC current gain characteristics.Complements the 2SA1797 and 2SC4672.1. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta

2SA1797PNP Transistors Features3 Low saturation voltage Excellent DC current gain characteristics2 Complements to 2SC46721.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6

DATA SHEET 2SA1797 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -50 V CURRENT -3 A FEATURES LOW SATURATION VOLTAGE: VCE(SAT)= -0.35V@IC/IB= -1A/-50mA EXCELLENT DC CURRENT GAIN PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS LEAD FREE AND HALOGEN-FREE E MECHANICAL DATA C B CASE: SOT-89 PACKAGE TERMINALS: SOLDERABLE PER MIL-ST

Plastic-Encapsulate TransistorsFEATURES2SA1797 (PNP) Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 V1. BASEEmitter-Base Voltage VEBO -6 V2. COLLECTO SOT-89Collector Current -Contin