2SA17H - описание и поиск аналогов

Ordering number EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit mm 2064 Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -500 mA) High speed switching time t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, VCEO = -300 V Low saturation voltage V = -0.5 V (max) CE (sat) Small collector output capacitance C = 5.5 pF (typ.) o

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -700 mA) High speed switching time t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC

Ordering number EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1729] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vie

Ordering number EN3481 PNP Epitaxial Planar Silicon Transistor 2SA1778 VHF Converter, Local Oscillator Applications Features Package Dimensions High power gain (PG=13dB typ ; f=0.4GHz). unit mm High cutoff frequency (fT=1.2GHz typ). 2018A Low Cob (Cob=1.0pF typ). [2SA1778] Complementary pair with the 2SC4269. C Collector B Base E Emitter SANYO CP Specific

Ordering number EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E Emitter C Collector B Base ( ) 2SA1710 SANYO NMP Spec

Ordering number EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High DC current gain (hFE=500 to 1200). 2038 Large current capacity. [2SA1766] Low collector-to-emitter saturation voltage. High VEBO. E Emitter C Collec

Ordering number EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 200V min. 2042A High current. [2SA1749/2SC4564] Small reverse transfer capacitance and excellent high frequnecy chacateristics Cre=

Ordering number ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064A Fast switching speed. [2SA1709/2SC4489] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Base 2 Collector ( ) 2SA1709 3

Ordering number EN3709 PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT processes. unit mm Low saturation voltage. 2042A Fast switching speed. [2SA1798] Large current capacity. B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C Param

Ordering number ENN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064A Features [2SA1705/2SC4485] 2.5 Adoption of FBET process. 1.45 Fast switching speed. 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector (

Ordering number EN3094A 2SA1708 / 2SC4488 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1708 / 2SC4488 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) 2SA1708 Absolute Maximum Ratings at Ta=25 C Parameter Symbol

Ordering number EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions Adoption of FBET , MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1730] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vi

Ordering number ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage and large current capacity. 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector ( ) 2SA1770 3 Base 2.54 2.54 Specificat

Ordering number ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064A Features [2SA1768/2SC4612] 2.5 Adoption of MBIT process. 1.45 High breakdown voltage, large current capacity. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5 1

Ordering number EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features Package Dimensions Adoption of FBET processes. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SA1732] Fast switching speed. 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1732] 1

Ordering number EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SA1731] Fast switching speed. 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1

Ordering number EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=1.5GHz typ). unit mm High current (IC=300mA). 2038A Adoption of FBET process. [2SA1724] 1 Base 2 Collector 3 Emitter Marking AJ (Bottom view) Specifications SANYO PCP Absolute Maximum

Ordering number EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collecto

Ordering number EN3091 PNP Epitaxial Planar Silicon Transistor 2SA1702 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation votlage. 2064 Large current capacity. [2SA1702] Fast switching speed. E Emitter C Collector B Base SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number ENN3026A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064A Features [2SA1706/2SC4486] 2.5 Adoption of FBET, MBIT processes. 1.45 Large current capacity and wide ASO. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5

Ordering number ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064A Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Em

Ordering number EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions Wideband amplifiers. unit mm High-frequency drivers. 2009B [2SA1723] Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process. 1 Emitter 2 Collector 3 Base JEDE

Ordering number EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm 2064 [2SA1703/2SC4483] E Emitter C Collector B Base ( ) 2SA1703 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol

Ordering number EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit mm Low collector-to-emitter saturation voltage. 2018A Fast switching speed. [2SA1728] Small-sized package. C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Ratings at Ta =

Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt

Ordering number EN3180B PNP Epitaxial Planar Silicon Transistor 2SA1764 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2018A High gain-bandwidth product. [2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-applied sets to be made small and slim. Comp

Ordering number EN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2033 High gain-bandwidth product. [2SA1765] Small collector capacitance. Complementary pair with the 2SC4454. B Base C Collector E Emitter SANYO SPA Speci

Ordering number EN3179A PNP Epitaxial Planar Silicon Transistor 2SA1763 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2059 High gain-bandwidth product. [2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763- applied sets to be made small and slim.

DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE(sat). This transistor is ideal Part No. Package for use as a driver in DC/DC converters and actuators. 2SA1742 Isolated TO-220 In addition, a small resin-molded

DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATUR

DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT mm) transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES High DC current amplifiers due

DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage

2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25 C) Paramete

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

General Purpose Transistor (50V, 0.15A) 2SA1774EB Applications Dimensions (Unit mm) General purpose small signal amplifier. EMT3F Features 1) Excellent hFE linearity. 1.6 0.7 2) Complements the 2SC4617EB. 0.26 (3) Structure PNP silicon epitaxial. planar transistor. (1) (2) 0.13 0.5 0.5 1.0 Each lead has same dimensions (1) Base (2) Emitter Abbreviate

2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT3 2) Low saturation voltage, 4.5 1.5 typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.6 3) High switching speed, typically tf = 1 s at Ic =100mA. 4) Wide SOA

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 150mA Emitter Emitter 2SA2029 2SA1774EB 2SA2029FHA (SC-105AA) (SC-89) F

Power Transistor (-50V, -3A) 2SA1797 Features Dimensions (Unit mm) 1) Low saturation voltage. MPT3 VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. 4.5 1.5 1.6 3) Complements the 2SC4672. (1) (2) (3) Packaging specifications 0.4 0.5 0.4 0.4 Type 2SA1797 1.5 1.5 3.0 (1)Base Package MPT3 (2)Collector hFE PQ (3)Emi

2SA1774-Q/2SA1774-R/2SA1774-S Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistor Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junctio

MCC 2SA1774-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1774-R CA 91311 Phone (818) 701-4933 2SA1774-S Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meet

MCC 2SA1774-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1774-R CA 91311 Phone (818) 701-4933 2SA1774-S Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meet

MCC 2SA1774-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1774-R CA 91311 Phone (818) 701-4933 2SA1774-S Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meet

Ordering number EN3094B 2SA1708/2SC4488 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) - 100V, - 1A, Low VCE sat , PNP NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Ba

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features Reduces Board Space High hFE, 210-460 (typical) SC-75

Ordering number EN3582A 2SA1768 Bipolar Transistor http //onsemi.com ( ) 180V, 160A, Low VCE sat PNP Single NMP Applicaitons Color TV sound output, converter, inverter Features Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features Reduces Board Space High hFE, 210-460 (typical) SC-75

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features Reduces Board Space High hFE, 210-460 (typical) SC-75

Ordering number EN3093A 2SA1707/2SC4487 Bipolar Transistor http //onsemi.com (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

Ordering number EN3026B 2SA1706 Bipolar Transistor http //onsemi.com ( ) 50V, 2A, Low VCE sat , PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Large current capacity and wide ASO Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Rating

Ordering number EN3096A 2SA1709/2SC4489 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC

Ordering number EN3025A 2SA1705 Bipolar Transistor http //onsemi.com ( ) -50V, -1A, Low VCE sat , PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers Features Adoption of FBET process Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --60 V Collecto

Ordering number EN3578A 2SA1770/2SC4614 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single NMP Features Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V C

2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features COLLECTOR Reduces Board Space 3 High hFE, 210-460 (typical) L

Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4656 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Ma

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4562 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute

Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4656 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Ma

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switch (pair with 2SC3938) 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rati

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt

Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switch (pair with 2SC3938) 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rati

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4562 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol

Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08 0.4 0.04 zine packing. 0.5 0.08 1.5 0.1

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol

Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switch (pair with 2SC3757) Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2

Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switch (pair with 2SC3757) Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt

UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R SOT-23 E B C Tape Reel 2SA1774L-x-AN3-R 2SA1774G-x-AN3-R SOT-523 E B C

UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T TO-251 B C E Tube 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R TO-252 B C E Tape Ree

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA1797G-x-AA3-R SOT-223 B C E Tape Reel - 2SA1797G-x-AB3-R SOT-8

2SA1774 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-523 Low COB. COB=4.0pF Complements the 2SC4617 A M 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 Product-Rank 2SA1774-Q 2SA1774-R 2SA1774-S K E Range 120 270 180 390 270 560 D Marki

2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 1 2 3 A PACKAGE DIMENSIONS E C B D 1 F G 2 H K 3 J L 1. Base 2. Collector Millimeter Millimeter REF. REF. 3. Emitter Min. Max. Min. Max. A 4.40

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1774 TRANSISTOR (PNP) FEATURES Reduces Board Space High hFE 1. BASE Low VCE(sat) 2. EMTTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR 1 Excellent DC current gain characteristics 2 Complements to 2SC4672 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION With TO-220F package Complement to type 2SC4511 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag

JMnic Product Specification Silicon PNP Power Transistors 2SA1788 DESCRIPTION With TO-247 package Complement to type 2SC4652 APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt

JMnic Product Specification Silicon PNP Power Transistors 2SA1718 DESCRIPTION With TO-220F package High DC current gain. Low collector saturation voltage. DARLINGTON APPLICATIONS Ideal for motor drviers and solenoid drivers application PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SA1771 DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching time APPLICATIONS High current switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX U

JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION With TO-220C package Complement to type 2SC4512 APPLICATIONS Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1789 DESCRIPTION With TO-247 package Complement to type 2SC4653 Low collector saturation voltage APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -1

JMnic Product Specification Silicon PNP Power Transistors 2SA1746 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER COND

2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 80 V VCB= 80V 10max A 2.8 ICBO VCEO 80 V IEBO VEB= 6V 10

2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 80 ICBO VCB= 80V 10max A V VCEO 80 IEBO VEB= 6V 10m

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1795 Case E-pack (TE5T4) Unit mm -5A PNP RATINGS

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1796 Case E-pack (TE7T4) Unit mm -7A PNP RATINGS

2SA1797 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 4.6 B 1 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low saturation voltage 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Excellent DC current gain characteristics 1.5 3.0 Complements to 2SC4672 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless other

2SA1774 SOT-523 Transistor(PNP) SOT-523 1. BASE 2. EMTTER 3. COLLECTOR Features Reduces Board Space High hFE 120 560 Low VCE(sat)

2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Coll

2SA1740 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 4.6 B 4.4 1.6 1 1.8 1.4 1.4 3. EMITTER 2 2.6 4.25 3 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 High breadown voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 Excellent hFE linearlity 3.0 Dimensions in inches and (millimeters) Marking AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

2SA1774 PNP 3 3 1 2 SC-89 (SOT-523F) WEITRON http //www.weitron.com.tw 2SA1774 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 120 560 (IC=-1 mAdc, VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-50 mAdc, IB=-5mAdc) Output Capacitanc

WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-89 Low saturation voltage Excellent DC current gain characteristics 1. BASE Pb-Free package is available RoHS product for packing code suffix "G" 2. COLLECTOR 1 Halogen free product for packing code suffix "H" 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parame

SMD Type Transistors PNP Transistors 2SA1729 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 Fast switching speed. Small-sized package. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

SMD Type Transistors PNP Transistors 2SA1778 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SC4269 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SA1736 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors PNP Transistors 2SA1766 1.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity. 0.42 0.1 0.46 0.1 Low collector-to-emitter saturation voltage. High VEBO. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

SMD Type Transistors PNP Transistors 2SA1730 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. 0.42 0.1 0.46 0.1 Small-sized package. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

SMD Type Transistors PNP Transistors 2SA1774 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Reduces Board Space High hFE Low VCE(sat) 3 0.3 0.05 0.5+0.1 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - E

SMD Type Transistors PNP Transistors 2SA1724 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.3A Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

SMD Type Transistors PNP Transistors 2SA1735 Features 1.70 0.1 Low saturation voltage High speed switching time Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SC4540 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors PNP Transistors 2SA1745 Features Low collector-to-emitter saturation voltage. Complementary to 2SC4555 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5

SMD Type Transistors PNP Transistors 2SA1759 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC4505 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll

SMD Type Transistors PNP Transistors 2SA1721 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-300V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC4497 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

SMD Type Transistors PNP Transistors 2SA1734 1.70 0.1 Features Low saturation voltage High speed switching time 0.42 0.1 0.46 0.1 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4539 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors Power Transistor 2SA1797 SOT-89 Unit mm +0.1 4.50-0.1 1.50+0.1 -0.1 1.80+0.1 -0.1 Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. 0.48+0.1 0.53+0.1 0.44+0.1 -0.1 -0.1 -0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta

SMD Type Transistors PNP Transistors 2SA1748 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SC4562. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collect

SMD Type Transistors PNP Transistors 2SA1728 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-40V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Coll

SMD Type Transistors PNP Transistors 2SA1740 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC4548 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

SMD Type Transistors PNP Transistors 2SA1797 Features 1.70 0.1 Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Vol

SMD Type Transistors PNP Transistors 2SA1764 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-200mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

SMD Type Transistors PNP Transistors 2SA1738 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 Complementary to 2SC3757 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors Power Transistor 2SA1797 SOT-89 Unit mm +0.1 4.50-0.1 1.50+0.1 -0.1 1.80+0.1 -0.1 Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. 0.48+0.1 0.53+0.1 0.44+0.1 -0.1 -0.1 -0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta

CHENMKO ENTERPRISE CO.,LTD 2SA1774GP SURFACE MOUNT General Purpose PNP Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Power Amplifier . FEATURE SC-75/SOT-416 * Surface mount package. (SC-75/SOT-416) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Collector power dissipation). 0.1 0.2 0.05 0.5 1.0 0.1 1.6

2SA1703(3CA1703) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier, electronic governor applications. Features Low V . CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V E

2SA1797 PNP Transistors Features 3 Low saturation voltage Excellent DC current gain characteristics 2 Complements to 2SC4672 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6

DATA SHEET 2SA1797 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -50 V CURRENT -3 A FEATURES LOW SATURATION VOLTAGE VCE(SAT)= -0.35V@IC/IB= -1A/-50mA EXCELLENT DC CURRENT GAIN PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS LEAD FREE AND HALOGEN-FREE E MECHANICAL DATA C B CASE SOT-89 PACKAGE TERMINALS SOLDERABLE PER MIL-ST

2SA1746T5TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-Emitter Voltage -50 V CEO V Emi

2SA1744T2TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and features a high h at low V ,which

2SA1774 2SA1774Q / 2SA1774R / 2SA1774S SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Low Cob = 3.5pF (Typical) Low Vce(sat)

Plastic-Encapsulate Transistors FEATURES 2SA1797 (PNP) Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V 1. BASE Emitter-Base Voltage VEBO -6 V 2. COLLECTO SOT-89 Collector Current -Contin

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1742 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and feat

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1758 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -2V, I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1746 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and f

isc Silicon PNP Power Transistor 2SA1725 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -2A CE(sat) C High Switching Speed Complement to Type 2SC4511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1742 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power trans

isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

isc Silicon PNP Power Transistor 2SA1718 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -2A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -2V, I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching

isc Silicon PNP Power Transistor 2SA1771 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

isc Silicon PNP Power Transistor 2SA1700 DESCRIPTION High breakdown voltage Low Collector-Emitter Saturation Voltage High Power Dissipation- P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t

isc Silicon PNP Power Transistor 2SA1726 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -2A CE(sat) C High Switching Speed Complement to Type 2SC4512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1741 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power

isc Silicon PNP Power Transistor 2SA1789 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High Switching Speed Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applicat

isc Silicon PNP Power Transistor 2SA1773 DESCRIPTION High breakdown voltage V >-400V @I =-1mA (BR)CEO C Large current capacity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -400 V CBO

isc Silicon PNP Power Transistor 2SA1746 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN